The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

One or more excitation energy sources emit light in an excitation spectrum and direct the emitted light as an excitation beam to the emitting surface of a wavelength conversion element directly or via reflection. Distinct areas of the emitting surface are coated with one or more distinct fluorescent phosphors. The phosphor-coated areas receive the excitation beam and generate a sequence of fluoresced light beams at a light output, each fluoresced beam of a narrow spectrum determined by the type of phosphor and the excitation spectrum. The fluoresced beams travel parallel to an emitting axis at a non-zero angle to axes associated with the excitation beams.

An image pickup apparatus capable of determining a light amount change characteristic at the time of photographing with high accuracy. A light amount change period of light from a photometric target is determined, based first and second evaluation values calculated, respectively, based on a predetermined photometric value, and each of photometric values at first and second intervals causing the photometric values to be in the same phase relationship and the opposite phase relationship with the predetermined photometric value, respectively, in a case where the light from the photometric target changes at a predetermined frequency. It is determined whether or not the light from the photometric target changes at a light amount change period corresponding to the predetermined frequency.

A reduced area imaging device is provided for use in medical or dental instruments such as an endoscope. The imaging device is provided in various configurations, and connections between the imaging device elements and a video display may be achieved by wired or wireless connections. A connector assembly located near the imaging device interconnects the imaging device to an image/power cable extending through the endoscope. The connector provides strain relief and stabilization for electrically interconnecting the imager to the cable. The connector also serves as the structure for anchoring the distal ends of steering wires extending through the body of the endoscopic device. The connector includes a strain relief member mounted over a body of the connector. The connector allows a steering wire capability without enlarging the profile of the distal tip of the endoscopic device.

An imaging device includes an imaging unit, a reference signal generation unit, m (m is an integer of 3 or more) number of column delay units, and a plurality of column AD conversion units. The plurality of column delay units is arranged so as to correspond to two or more and less than m of the column AD conversion units. Each of the plurality of column delay units includes a first delay circuit. The first delay circuit generates a plurality of first delay clocks. The column AD conversion unit includes a comparison unit, a latch unit, and a counter unit. The comparison unit compares a pixel signal with a reference signal, and outputs a control signal corresponding to a comparison result. The latch unit includes a plurality of latch circuits that latches the plurality of first delay clocks on the basis of a state change of the control signal.

Various technologies described herein pertain to combining high dynamic range techniques to enable rendering higher dynamic range scenes with an image sensor. The image sensor can implement a combination of spatial exposure multiplexing and temporal exposure multiplexing, for example. By way of another example, the image sensor can implement a combination of spatial exposure multiplexing and dual gain operation. Pursuant to another example, the image sensor can implement a combination of temporal exposure multiplexing and dual gain operation. In accordance with yet another example, the image sensor can implement a combination of spatial exposure multiplexing, temporal exposure multiplexing, and dual gain operation. The image sensor can be formed on a single wafer or the image sensor can be a 3D-IC image sensor that includes at least two vertically integrated layers.

An image sensor including: a first control circuit; a plurality of pixels, each including a photodetector, a comparator of the level of an output signal of the photodetector with a reference value, and a second control circuit connected to the first control circuit, the second circuit being capable of sending a signal of address reading request to the first circuit when the pixel turns on, of receiving an address reading acknowledgement signal transmitted by the first circuit, and of deactivating the pixel on reception of the reading acknowledgement signal; and at least one third control circuit capable, when a pixel receives a reading acknowledgement signal, of blocking the transmission of address reading request signals in at least one adjacent pixel.

A solid-state imaging device that is capable of improving an imaging characteristic by enhancing a dynamic range of an ADC is provided. A solid-state imaging device that includes a pixel array including a plurality of pixels outputting a pixel signal by photoelectric conversion, and an AD conversion processing unit that performs AD conversion with respect to the pixel signal, and in which the AD conversion processing unit includes a comparator having a first amplifying unit that includes a pair of first differential pairs constituted of P-type transistors and a pair of second differential pairs constituted of N-type transistors, and a second amplifying unit that amplifies an output of the first amplifying unit, and in which a P-type transistor and an N-type transistor are connected in series is provided.

An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

An example information processing apparatus including an infrared light emitter capable of emitting infrared light and a camera capable of at least taking an infrared light image is provided. In the information processing apparatus, when face detection has been successful with the infrared light emitted, emission of the infrared light is stopped, and a face detection process with the emission stopped is executed. As a result, when face detection has been successful, the face detection process is continued with emission of the infrared light stopped, and when face detection has been failure, the infrared light is emitted and the face detection process is continued.