An image sensing device may include a pixel circuit and a driving control circuit. The pixel circuit is configured to store photocharge, generated by a photoelectric conversion element, as image information. The driving control circuit may control the pixel circuit to adjust the signal conversion gain ratio depending on the illuminance of the incident light at the image sensing device.

An imaging system has a imaging array on a semiconductor chip which also includes circuit the elements NPU and SRAM to rapidly identify target objects in the imaging data and output their high level representations with low power consumption.

In a solid-state imaging element that measures a distance, a circuit scale is reduced. The solid-state imaging element includes a pulse signal generation section and an up-down counter. The pulse signal generation section is provided with an avalanche photodiode that converts incident light including reflected light of irradiation light radiated during a predetermined light-on period into a photocurrent and multiplies the photocurrent and a quench circuit that generates a pulse signal on the basis of the multiplied photocurrent. The up-down counter performs one of up counting and down counting each time the pulse signal is generated during the light-on period, and performs another of the up counting and the down counting each time the pulse signal is generated during a light-off period that does not correspond to the light-on period.

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

An image sensor 30 includes an image information processing unit 4 that forms integrated information in which image sensor identification information capable of identifying the image sensor 30 and image information obtained by an analog/digital conversion unit 25 are associated with each other, and an image information output unit 24 that outputs the integrated information to an external unit.

The present application discloses a pixel circuit of a photo detector panel. The pixel circuit includes a reset sub-circuit for resetting voltages at a first node and a second node, a photoelectric-conversion sub-circuit coupled to the first node and configured to convert an optical signal to a first voltage at the first node, a compensation sub-circuit coupled between the first node and the second node and configured to store the first voltage and determine a second voltage at the second node. The pixel circuit further includes an integration sub-circuit coupled to the first node and to determine a third voltage at the second node to be applied to a gate of a driving transistor to generate a current flowing from an input port provided with a bias voltage to an output port. The current is substantially independent from a threshold voltage of the driving transistor and the bias voltage.

An image sensor includes; a sensor array generating a pixel signal, a ramp signal generator generating a ramp signal having a decreasing slope during a ramp signal enable period between a first time at which a counter enable signal is activated and a third time at which the ramp signal ends falling, a comparator comparing the pixel signal with the ramp signal to trigger an output signal, and counters, where at least one of the counters performs counting during an entire counter enable period extending between the first time and a second time at which the comparator triggers the output signal, but not all of the counters perform counting during at least one section of the counter enable period.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises: a light-sensitive element to generate electrical charge from incident light; a readout node; a transfer gate to selectively couple the light-sensitive element to the readout node; a converter transistor to convert the charge present at the readout node into a voltage signal at a signal output; and a selection switch that is connected to the signal output of the converter transistor to selectively couple the signal output of the converter transistor to an associated readout line of the image sensor. The respective pixel has an electrically conductive shielding structure that at least partly surrounds the readout node and that is set or can be set to an electrical potential that depends on the voltage signal of the converter transistor.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.