Accuracy of results obtained by integrally processing information acquired by different sensors is improved. A solid-state imaging device according to an embodiment includes: a first sensor that detects light in a first wavelength band; and a second sensor that detects light of a second wavelength band different from the first wavelength band, in which the first sensor includes a first pixel (110) that detects light of the first wavelength band in incident light, and the second sensor includes a second pixel (110) that detects light in the second wavelength band that has transmitted through the first pixel among the incident light.

An imaging system with a light source controls the sensitivity of pixels to light, by performing both superpixel modulation and curtain modulation. The superpixel modulation may facilitate rapid data acquisition. The curtain modulation may suppress the effect of ambient light. In superpixel modulation, each pixel set may be modulated by a separate superpixel modulation signal that causes sensitivity of the pixel set to light to vary over time, and each superpixel may include a pixel from each pixel set. The curtain modulation may cause pixels in only a small region of the photodetector to be sensitive to light. The curtain modulation may cause the small region to move to track the dot of light, by changing which pixels are in the region. This invention may be used for 3D scanning.

A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

The present disclosure provides an image sensor circuit, including: a pixel array, including a plurality of pixel series, where a pixel series in the plurality of pixel series includes a plurality of pixel circuits; and a clock signal generating circuit, coupled to a first end and a second end of the pixel series; where a first clock signal is propagated from the first end of the pixel series to the second end of the pixel series at a first time; and where a second clock signal is propagated from the second end of the pixel series to the first end of the pixel series.

In a solid-state image sensing apparatus of an addressing method, a clock-conversion part generates a high-speed clock signal having a frequency two times or more the frequency of a low-speed clock signal. A signal processing part receives 10-bit pixel data through a horizontal signal line, performs predetermined signal processing, and passes parallel-format data to a switching part. The switching part selects each one bit of the parallel-format 10-bit data in a predetermined sequence to output from an output terminal using the high-speed clock signal from the clock-conversion part as a switching command, thus converts the parallel-format data into serial-format data, and passes it to an output buffer. The output buffer externally outputs differential output of normal video data and inverted video data individually from output terminals. Accordingly, the problems in power consumption, noises, and unnecessary radiation are solved, and higher-speed output is achieved.

An image sensor includes a pixel array including a plurality of unit pixels in a matrix including rows and columns, a selection unit configured to select outputs of some of the columns of the pixel array and output selection output signals, and an analog-digital conversion block including a plurality of analog-digital conversion units corresponding to the columns of the pixel array. First ones of the plurality of analog-digital conversion units include analog-digital conversion blocks configured to convert the selection output signals and output digital data. When the first analog-digital conversion units convert the selection output signals, second ones of the plurality of analog-digital conversion units are turned off.

A solid-state imaging device includes a plurality of pixels arranged in a matrix, wherein one pixel of the plurality of pixels is arranged in one unit pixel region of a plurality of unit pixel regions, a plurality of sub vertical output lines, each of which outputs pixel signals from the plurality of pixels in the same pixel column, and a plurality of block select circuits provided in one-to-one correspondence with the plurality of sub vertical output lines. A load capacitance connected to a main vertical output line is reduced by connecting the plurality of sub vertical output lines and the main vertical output line via the plurality of block select circuits. This makes high-speed pixel signal readout possible.

An imaging device includes: first and second pixel cells each including a photoelectric converter and a transistor electrically connected to the photoelectric converter, the transistor having a control terminal; a first buffer circuit having a first input terminal and a first output terminal, the first buffer circuit receiving a signal for controlling the transistor of the first pixel cell; a second buffer circuit having a second input terminal and a second output terminal, the second buffer circuit receiving a signal for controlling the transistor of the second pixel cell; a first control signal line connecting the first output terminal to the control terminal of the first pixel cell; and a second control signal line connecting the second output terminal to the control terminal of the second pixel cell. The first control signal line and the second control signal line are connected to each other.

The present technology relates to an imaging element, a driving method of an imaging element, and an electronic device capable of preventing deterioration in image quality. The imaging element reads a first signal in a state where a charge holding unit is reset, reads a second signal in a state where a reset transistor is turned off, reads a third signal in a state where charges obtained by photoelectric conversion are accumulated in the charge holding unit, reads a fourth signal in a state where the charge holding unit is reset, and sets a reset signal to an intermediate voltage between an on voltage and an off voltage before the reset signal to a gate electrode of the reset transistor is switched from the on voltage to the off voltage after the first signal is read, and generates a noise signal by correlated double sampling of the first signal and the second signal, generates a data signal by correlated double sampling of the third signal and the fourth signal, and generates an output signal by correlated double sampling of the data signal and the noise signal. The present technology is applied to, for example, an imaging element.

The present disclosure relates to a solid-state imaging element, a driving method, and an electronic device that can generate an arbitrary intermediate voltage level between a high voltage level and a low voltage level. A solid-state imaging element according to a first aspect of the present disclosure includes: a first driving line configured to supply selectively to a posterior stage, a first voltage level that is output from a first power source and a second voltage level that is output from a second power source and lower than the first voltage level; a second driving line that is different from the first driving line; a capacitance that is formed between the first driving line and the second driving line; and a floating setting unit configured to set the first driving line to a floating state. The present disclosure is applicable to, for example, a CMOS image sensor.