H05H1/30

High reliability, long lifetime, negative ion source

A negative ion source includes a plasma chamber, a microwave source, a negative ion converter, a magnetic filter and a beam formation mechanism. The plasma chamber contains gas to be ionized. The microwave source transmits microwaves to the plasma chamber to ionize the gas into atomic species including hyperthermal neutral atoms. The negative ion converter converts the hyperthermal neutral atoms to negative ions. The magnetic filter reduces a temperature of electrons provided between the plasma chamber and the negative ion converter. The beam formation mechanism extracts the negative ions.

PLASMA GENERATING DEVICE
20230187195 · 2023-06-15 · ·

A plasma generating device includes: a chamber which is equipped with a dielectric wall structure and into which sample gas to be measured flows; an RF supplying mechanism that generates plasma inside the chamber using an electric field and/or a magnetic field through the dielectric wall structure; and a floating potential supplying mechanism that includes a first electrode disposed along an inner surface of the chamber. The RF supplying mechanism may include an RF field forming unit disposed in a first direction with respect to the chamber and the first electrode may include an electrode disposed in a second direction with respect to the chamber.

PLASMA GENERATING DEVICE
20230187195 · 2023-06-15 · ·

A plasma generating device includes: a chamber which is equipped with a dielectric wall structure and into which sample gas to be measured flows; an RF supplying mechanism that generates plasma inside the chamber using an electric field and/or a magnetic field through the dielectric wall structure; and a floating potential supplying mechanism that includes a first electrode disposed along an inner surface of the chamber. The RF supplying mechanism may include an RF field forming unit disposed in a first direction with respect to the chamber and the first electrode may include an electrode disposed in a second direction with respect to the chamber.

Methods and Systems for Microwave Assisted Production of Graphitic Materials
20220371896 · 2022-11-24 ·

Systems and methods for plasma based synthesis of graphitic materials. The system includes a plasma forming zone configured to generate a plasma from radio-frequency radiation, an interface element configured to transmit the plasma from the plasma forming zone to a reaction zone, and the reaction zone configured to receive the plasma. The reaction zone is further configured to receive feedstock material comprising a carbon containing species, and convert the feedstock material to a product comprising the graphitic materials in presence of the plasma.

Methods and Systems for Microwave Assisted Production of Graphitic Materials
20220371896 · 2022-11-24 ·

Systems and methods for plasma based synthesis of graphitic materials. The system includes a plasma forming zone configured to generate a plasma from radio-frequency radiation, an interface element configured to transmit the plasma from the plasma forming zone to a reaction zone, and the reaction zone configured to receive the plasma. The reaction zone is further configured to receive feedstock material comprising a carbon containing species, and convert the feedstock material to a product comprising the graphitic materials in presence of the plasma.

Surface modifying device

A discharge electrode E in an electrode chamber C comprises a plurality of electrode members 8, 9. The electrode members 8, 9 are disposed facing each other by having a supporting member 4 therebetween, a gap is formed between the facing portions of the electrode members 8, 9, and by having the gap as a gas passageway 15, the gas passageway is opened in the leading end of the discharge electrode. A replacement gas having been supplied from a manifold pipe 3 is supplied to the gas passageway 15 via an orifice.

Surface modifying device

A discharge electrode E in an electrode chamber C comprises a plurality of electrode members 8, 9. The electrode members 8, 9 are disposed facing each other by having a supporting member 4 therebetween, a gap is formed between the facing portions of the electrode members 8, 9, and by having the gap as a gas passageway 15, the gas passageway is opened in the leading end of the discharge electrode. A replacement gas having been supplied from a manifold pipe 3 is supplied to the gas passageway 15 via an orifice.

INDUSTRIAL HEATING APPARATUS AND METHOD EMPLOYING FERMION AND BOSON MUTUAL CASCADE MULTIPLIER FOR BENEFICIAL MATERIAL PROCESSING KINETICS
20170347440 · 2017-11-30 · ·

Presented is a simple, but highly energy efficient industrial heating device and method for rapid heating and high temperature gradient production whereby fermions and bosons are introduced into an adjoining fluid which may be boundary layered and consequently produce an amplifiable activated condition even at room pressure and high temperature. This heating device uses a comparatively long current carrying member which may have some curvature with penetration of the current carrying members into spaces that could have any cross-sectional geometry in a high temperature resistant stable material.

Cold plasma generating apparatus and multi-cold plasma array apparatus comprising the same
11264211 · 2022-03-01 · ·

The present disclosure relates to a cold plasma generating apparatus that can efficiently ignite (initially discharge) cold plasma and easily match common impedance and that is optimized for use in applications related to sterilization because it can uniformly distribute power to multiple plasma sources through a single power supply in a multi-plasma array configuration and increase effective plasma volume, and a multi-cold plasma array apparatus comprising the same.

Microwave chemical processing
09812295 · 2017-11-07 · ·

Methods and systems include supplying pulsed microwave radiation through a waveguide, where the microwave radiation propagates in a direction along the waveguide. A pressure within the waveguide is at least 0.1 atmosphere. A supply gas is provided at a first location along a length of the waveguide, a majority of the supply gas flowing in the direction of the microwave radiation propagation. A plasma is generated in the supply gas, and a process gas is added into the waveguide at a second location downstream from the first location. A majority of the process gas flows in the direction of the microwave propagation at a rate greater than 5 slm. An average energy of the plasma is controlled to convert the process gas into separated components, by controlling at least one of a pulsing frequency of the pulsed microwave radiation, and a duty cycle of the pulsed microwave radiation.