An inductively coupled plasma (ICP) torch is described that facilitates laminar flow of a cooling gas introduced by a plurality of input ports between an outer tube and an inner tube configured to surround an injector for introduction of an aerosolized sample to a plasma. A system embodiment includes, but is not limited to, an inner tube; and an outer tube surrounding at least a portion of the inner tube to form an annular space, the outer tube defining a plurality of inlet ports for introduction of a cooling gas into the annular space as a laminar flow via each inlet port of the plurality of inlet ports.

A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.

Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

Linear coils, a first ceramic block, and a second ceramic block are arranged in an inductively-coupled plasma torch. A chamber has an annular shape. Plasma generated inside the chamber is ejected to a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. The coil is arranged inside a rotating cylindrical ceramic pipe. Accordingly, the plasma can be generated with excellent power efficiency, and fast plasma processing can be performed.

An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

An ICP emission spectrometer is schematically configured to include an inductively coupled plasma generation unit, a light condensing unit, a spectroscope, a detector, and a controller. The detector includes a photomultiplier and has a detector controller and an input unit. The photomultiplier has voltage dividing resistors, which make an amplification factor not to become constant immediately due to a change in an application voltage applied to the photomultiplier, but the detector controller controls an idle voltage and an idle voltage application time so that a multiplication factor becomes constant, during a period from when analysis conditions are input to the input unit in advance until a sample containing an analysis-targeted element is introduced into the inductively coupled plasma generation unit.

Disclosed herein are methods and apparatuses for adding thermal energy to a glass melt. Apparatuses for generating a thermal plasma disclosed herein comprise an electrode, a grounded electrode, a dielectric plasma confinement vessel extending between the two electrodes, and a magnetic field generator extending around the dielectric plasma confinement vessel. Also disclosed herein are methods for fining molten glass comprising generating a thermal plasma using the apparatuses disclosed herein and contacting the molten glass with the thermal plasma. Glass structures produced according to these methods are also disclosed herein.

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.

A plasma ion source includes: a gas introduction chamber, into which raw gas is introduced; an insulation member provided in the gas introduction chamber; a plasma generation chamber connected to the gas introduction chamber; a coil that is wound along an outer circumference of the plasma generation chamber and to which high-frequency power is applied; and an electrode arranged at a boundary between the gas introduction chamber and the plasma generation chamber and having a plurality of through-holes formed therein, wherein a size of the through-holes is smaller than a length of a plasma sheath.

An inductively coupled plasma generating device is configured to include a plasma torch, a high frequency induction coil and a high frequency power source. In addition, a heat transfer member, in which a first terminal is connected to the high frequency induction coil and a second terminal is connected to a cooling block, is disposed in the inductively coupled plasma generating device. The second terminal of the heat transfer member is located above the first terminal, thereby causing condensed operating fluid to fall and move toward the first terminal due to the action of gravity. Accordingly, it is possible to achieve excellent cooling capacity by improving circulation and mobility of the operating fluid.