Provided are an electronic component manufacturing method by which even a platable layer made of a difficult-to-plate material can be easily plated with good adhesion without using a special chemical solution or a photolithography technique, and an electronic component which has a peel strength of 0.1 N/mm or greater as measured by a copper foil peel test. A picosecond laser beam having a pulse duration on the order of a picosecond or a femtosecond laser beam having a pulse duration on the order of a femtosecond is emitted at a surface of a platable layer (2) in order to roughen the surface, a wiring pattern is formed using a mask (13), and a plated part (12) is formed on the surface of the wiring pattern.

A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.

An opto-electric hybrid board includes: an electric circuit board including an insulation layer haying front arid back surfaces, arid electrical interconnect lines formed on the front surface of the insulation layer; and an optical waveguide having a substantially rectangular shape as seen in plan view and provided on the back surface of the insulation layer of the electric circuit board, with a metal layer therebetween. The optical waveguide has at least one end portion disposed in overlapping relation with the metal layer. The at least one end portion of the optical waveguide has corner portions. Each of the corner portions is radiused to have an arcuate shape or has a polygonal shape produced by arranging a plurality of obtuse-angled portions in a substantially arcuate configuration.

A circuit board includes a substrate, a plurality of contacts disposed on a surface of the substrate, and a solder mask. The contacts have a plurality of plating regions and a metal layer on the plating regions, and the plating regions have at least two different sizes. The solder mask covers the surface of the substrate and covers edges of the plating regions, in which topmost surfaces of the contacts are below a top surface of the solder mask, and a gap between the topmost surfaces of the contacts and the top surface of the solder mask is larger than 0 μm and is smaller than 5 μm.

A package structure includes a substrate, a sensor, a base, a lead frame, conductive vias and patterned circuit layer. The substrate includes a component-disposing region and electrode contacts. The sensor is disposed at the component-disposing region and electrically connected to the electrode contacts. The base covers the substrate with its bonding surface and includes a receiving cavity, a slanted surface extended between a bottom surface of the receiving cavity and the bonding surface, and electrodes disposed on the bonding surface and electrically connected to the electrode contacts respectively. The sensor is located in the receiving cavity. The lead frame is disposed at the base. The conductive vias penetrates the base and electrically connected to the lead frame. The patterned circuit layer is disposed on the slanted surface and electrically connected to the conductive vias and the electrodes.

There is provided a contact structure, comprising a substrate contact including a first contact portion that is located on a leading end side of the substrate contact and that comes into contact with a substrate and a second contact portion that is located nearer to a base end side of the substrate contact than the first contact portion; a seal member configured to cover a periphery of the substrate contact and to have a sealing surface that comes into contact with the substrate to seal the substrate contact; a first pressing portion configured to elastically apply a contact pressure on the substrate to the substrate contact; and a second pressing portion configured to come into contact with the seal member and to apply a contact pressure on the substrate to the seal member independently of the first pressing portion, wherein the first contact portion adheres to the seal member, and the second contact portion is fit in the seal member to be displaceable relative to the seal member.

A component carrier for carrying electronic components, wherein the component carrier comprises an at least partially electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end, wherein the at least one electronic component is electrically contacted directly to the component contacting end, wherein at least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure, and wherein the wiring contacting end is electrically contacted directly to the wiring structure.

A wafer-level manufacturing method for embedding a passive element in a glass substrate is disclosed. A highly doped silicon wafer is dry etched to form a highly doped silicon mould wafer, containing highly doped silicon passive component structures mould seated in cavity arrays; a glass wafer is anodically bonded to the highly doped silicon mould wafer in vacuum pressure to seal the cavity arrays; the bonded wafers are heated so that the glass melts and fills gaps in the cavity arrays, annealing and cooling are performed, and a reflowed wafer is formed; the upper glass substrate of the reflowed wafer is grinded and polished to expose the highly doped silicon passives; the passive component structure mould embedded in the glass substrate is fully etched; the blind holes formed in the glass substrates after the passive component structure mould has been etched is filled with copper by electroplating; the highly doped silicon substrate and unetched silicon between the cavity arrays are etched, and several glass substrates embedded with a passive element are obtained; to form electrodes for the passives, a metal adhesion layer is deposited, and a metal conductive layer is electroplated. The process is simple, costs are low, and the prepared passive elements have superior performance.

A printed circuit board deformable in both length and width includes a first conductive circuit layer, a second conductive circuit layer, an elastic film, and conductive via holes. The first conductive circuit layer includes first conductive circuits. First honeycomb holes are defined on the first conductive circuits. The second conductive circuit layer faces away from the first conductive circuit layer, the second conductive circuit layer comprises second conductive circuits, second honeycomb holes being defined on the second conductive circuits, each of the second honeycomb holes corresponds to one of the first honeycomb holes. The first conductive circuits are embedded in the elastic film. Each of the conductive via holes corresponds to one first honeycomb holes.

An aqueous electrolytic composition and a process for electrodeposition of copper on a dielectric or semiconductor base structure using the aqueous electrolytic composition. The process includes (i) contacting a metalizing substrate comprising a seminal conductive layer on the base structure with an aqueous electrolytic deposition composition; and (ii) supplying electrical current to the electrolytic deposition composition to deposit copper on the substrate. The aqueous electrolytic composition comprises: (a) copper ions; (b) an acid; (c) a suppressor; and (d) a quaternized poly(epihalohydrin) comprising n repeating units corresponding to structure 1N and p repeating units corresponding to structure 1P:

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