A color-converting substrate includes a color-converting part including a wavelength-converting particle configured to change a wavelength of an incident light to emit a light having a color different from the incident light, a color filter pattern filtering the light emitted from the color-converting part, and a light-reflective layer disposed between the color-converting part and the color filter pattern to selectively reflect a light having a wavelength same as the wavelength of the incident light.

A display apparatus includes a first substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device disposed over the first substrate, each of the first to third light-emitting devices including a first light emission layer; a second substrate disposed over the first substrate with the first to third light-emitting devices therebetween, the second substrate including a first through hole, a second through hole, and a third through hole overlapping the first to third light-emitting devices; a reflective layer on an inner surface of each of the first to third through holes; a first color filter layer in the first through hole; a second color filter layer and a second quantum dot layer in the second through hole; and a third color filter layer and a third quantum dot layer in the third through hole.

A display apparatus includes a first substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device disposed over the first substrate, each of the first to third light-emitting devices including a first light emission layer; a second substrate disposed over the first substrate with the first to third light-emitting devices therebetween, the second substrate including a first through hole, a second through hole, and a third through hole overlapping the first to third light-emitting devices; a reflective layer on an inner surface of each of the first to third through holes; a first color filter layer in the first through hole; a second color filter layer and a second quantum dot layer in the second through hole; and a third color filter layer and a third quantum dot layer in the third through hole.

Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a full-color display is provided, the arrangement having a plurality of pixels, with each pixel including a first sub-pixel comprising a Group III-V inorganic emissive thin film configured to emit light of a first color, where there is at least one first sub-pixel per pixel of the full-color pixel arrangement. Each pixel may include an organic second sub-pixel and an organic third sub-pixel that are configured to emit light of a different color than the first color.

Embodiments of the disclosed subject matter provide a full-color pixel arrangement for a full-color display is provided, the arrangement having a plurality of pixels, with each pixel including a first sub-pixel comprising a Group III-V inorganic emissive thin film configured to emit light of a first color, where there is at least one first sub-pixel per pixel of the full-color pixel arrangement. Each pixel may include an organic second sub-pixel and an organic third sub-pixel that are configured to emit light of a different color than the first color.

A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.

A light emitting element includes a pair of electrodes and first and second organic layers between the pair of electrodes. The second organic layer is adjacent to the first organic layer. The first organic layer includes a first organic material. The second organic layer includes a second organic material. The second organic layer includes a first region and a second region. The first region is in contact with the first organic layer and includes the first organic material.

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

A nanomaterial includes a core and an outer shell. The core includes ZnO nanoparticles and a metal element doped in the ZnO nanoparticles. The outer shell includes a metal oxide.

A quantum dot film, a method for preparing the same, and a quantum dot light emitting diode are provided. The method for preparing the quantum dot film includes: providing a substrate; and depositing a mixed solution containing a quantum dot and a high molecular polymer onto the substrate, and performing annealing treatment to obtain the quantum dot film. A temperature of the annealing treatment is greater than or equal to a glass transition temperature of the high molecular polymer. The preparation method can make the position of the quantum dot in the quantum dot film rearranged, such that the quantum dot is tightly accumulated and regularly arranged in the high molecular polymer, whereby forming a flat quantum dot film. The quantum dot film obtained from the preparation method, when applied to the quantum dot light emitting device, can significantly improve the electro-optical efficiency and lifespan of the device.