Provided is an image sensor including a sensor array including a plurality of light-sensors respectively including an optoelectronic device, the optoelectronic device including a first electrode, a second electrode spaced apart from the first electrode, and an active layer provided between the first electrode and the second electrode, the active layer including a plurality of quantum dot layers having different energy bands, and a circuit including circuits respectively connected to the plurality of light-sensors and configured to readout an optoelectronic signal generated from each of the plurality of light-sensors.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer may include a layer including a metal oxide, and a surface of the layer including a metal oxide is an organic acid-treated surface.

A quantum dot light-emitting diode substrate having a bonding layer and a method of preparing the same are provided. The quantum dot light-emitting diode substrate including a plurality of sub-pixel light-emitting regions, wherein each of the sub-pixel light-emitting regions includes a light-emitting layer including a bonding layer and a quantum dot bonded to the bonding layer. The quantum dot light-emitting diode substrate can be prepared with high resolution by a convenient process, and is suitable for mass production.

A quantum dot light-emitting diode substrate having a bonding layer and a method of preparing the same are provided. The quantum dot light-emitting diode substrate including a plurality of sub-pixel light-emitting regions, wherein each of the sub-pixel light-emitting regions includes a light-emitting layer including a bonding layer and a quantum dot bonded to the bonding layer. The quantum dot light-emitting diode substrate can be prepared with high resolution by a convenient process, and is suitable for mass production.

A light-emitting layer (3) in a light-emitting element includes: a quantum dot (31); a plurality of first ligands (32) each including a first functional group (34) and a positively charged portion (35); a plurality of second ligands (33) each including a second functional group (41) and a negatively charged portion (42); and an ionic liquid (34) in which the quantum dot (31) is dispersed.

A light-emitting layer (3) in a light-emitting element includes: a quantum dot (31); a plurality of first ligands (32) each including a first functional group (34) and a positively charged portion (35); a plurality of second ligands (33) each including a second functional group (41) and a negatively charged portion (42); and an ionic liquid (34) in which the quantum dot (31) is dispersed.

A display device includes a light-emitting layer and a hole transport layer. The light-emitting layer includes quantum dots coordinated with a ligand including a thiol group. The hole transport layer includes VNPB that is chemically bonded to the thiol group.

A display device includes a light-emitting layer and a hole transport layer. The light-emitting layer includes quantum dots coordinated with a ligand including a thiol group. The hole transport layer includes VNPB that is chemically bonded to the thiol group.

A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.

A quantum dot (QD) dispersion solution includes QD phosphor particles, ligands, and a solvent. Each ligand includes a thiol group and at least one functional group of ester groups and ether groups. The solvent is propylene glycol monomethyl ether acetate.