Provided are a composition for forming an organic light-emitting device, a method of preparing an organic light-emitting device, and an organic light-emitting device. The method of preparing an organic light-emitting device includes: forming an organic layer including an emission layer on a first electrode, wherein the forming of the organic layer includes performing a solution process using a composition for forming an organic light-emitting device, the composition for forming an organic light-emitting device includes n kinds of solvent, a solvent (Sv.sub.1) having the highest boiling point among the n kinds of solvent and a solvent (Sv.sub.2) having the second highest boiling point among the n kinds of solvent satisfy Equation 1, n is an integer from 2 to 10, and the solvent (Sv.sub.1) having the highest boiling point among the n kinds of solvent is a compound represented by Formula 1.

The invention relates to novel organic semiconductor (OSC) formulations, to their use for the preparation of OSC layers or OSC patterns in organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photo-detectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising an OSC layer or OSC pattern prepared from these OSC formulations.

The present disclosure relates to a method for manufacturing an OLED light emitting device, an OLED light emitting device, and an OLED display device. The method for manufacturing an OLED light emitting device according to an embodiment of the present disclosure includes forming a pixel defining layer on a substrate, wherein the pixel defining layer comprises a lyophilic material or a lyophobic material and the pixel defining layer comprises a plurality of openings which are spaced apart from each other; forming an anode layer on the substrate and in each opening; adding a preset solvent having a property opposite to that of the lyophilic material or the lyophobic material of the pixel defining layer in an OLED film layer ink; and ink-jet printing the OLED film layer ink on the anode layer and in each opening to form an OLED film layer.

A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Disclosed herein are organic photosensitive optoelectronic device comprising a first layer comprising one or more of a first layer material, a second layer comprising one or more of a second layer material, and a third layer comprising one or more of a third layer material. The second layer may be dissolved in a semi-orthogonal solvent. The first layer and the third layer may be very slightly soluble or practically insoluble in the semi-orthogonal solvent.

Disclosed herein are organic photosensitive optoelectronic device comprising a first layer comprising one or more of a first layer material, a second layer comprising one or more of a second layer material, and a third layer comprising one or more of a third layer material. The second layer may be dissolved in a semi-orthogonal solvent. The first layer and the third layer may be very slightly soluble or practically insoluble in the semi-orthogonal solvent.

An object of the present invention is to provide a n-type semiconductor element having improved n-type semiconductor characteristics and excellent stability with a convenient process, where the n-type semiconductor element includes: a substrate; a source electrode, a drain electrode, and a gate electrode; a semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer for insulating the semiconductor layer from the gate electrode; and a second insulating layer positioned on the opposite side of the semiconductor layer from the gate insulating layer and in contact with the semiconductor layer, where the semiconductor layer contains nanocarbon, and the second insulating layer contains (a) a compound with an ionization potential in vacuum of 7.0 eV or less, and (b) a polymer.

A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.