A method for manufacturing a semiconductor device having an organic semiconductor material is provided. The method includes performing a large-area solution shearing step to form a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals with low shearing speed and forming Au electrodes by thermal evaporation on a wafer. The large-area solution shearing step is performed at a temperature in a range between about 60° C. and about 65° C. and with a shearing speed in a range between about 2 μm/sand about 3 μm/s. The 1L or 2L crystals have single-crystalline domains extending over several millimeters. An organic field-effect transistor (OFET) comprising an active layer that comprises a monolayer (1L) or bi-layer (2L) C.sub.10-DNTT crystals formed according to the method is also provided.

An ink composition for a light-emitting device, the ink composition including: a metal oxide; and a mixed solvent composition including a first solvent, a second solvent, and a third solvent, wherein the first solvent includes one hydroxyl group and has a boiling point of 160° C. to 270° C., the second solvent includes one hydroxyl group and has a boiling point of 270° C. to 350° C., and the third solvent includes two or more hydroxyl groups and has a boiling point of 270° C. to 350° C.

A modified perovskite quantum dot material, a fabricating method thereof, and a display device are provided. Hydroxyl-modified perovskite quantum dots are obtained by adding an excess amount of hydroxyl-containing surface ligands to a solution of synthesized perovskite quantum dots. After high-speed centrifugation, the obtained perovskite quantum dots are redispersed into a non-polar alkyl solvent to form a solution. Further, an excess amount of ethyl orthosilicate is added to the solution, and after exposing the solution for a long period of time, the ethyl orthosilicate is hydrolyzed to form a triethoxysilane group. After centrifugation, modified perovskite quantum dots wrapped by the triethoxysilane groups are obtained, which effectively improves stability of the perovskite quantum dots.

A composition for use as an electronic material. The composition contains at least one organic semiconducting material, and at least one electrically insulating polymer forming a semiconducting blend wherein the insulating polymer acts as a matrix for the organic semiconducting material resulting in an interpenetrating morphology of the polymer and the semiconductor material. The variation of charge carrier mobility with temperature in the semiconducting blend is less than 20 percent in a temperature range. A method of making a film of an electronic material. The method includes dissolving at least one organic semiconducting material and at least one insulating polymer into an organic solvent in a pre-determined ratio resulting in a semiconducting blend, depositing the blend onto a substrate to form a film comprising an interpenetrating morphology of the at least one insulating polymer and the at least one organic semiconductor material.

An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

An electroluminescent device including a first electrode, a hole transport layer disposed on the first electrode, a first emission layer disposed on the hole transport layer, the first emission layer including a first light emitting particle on which a first ligand and a second ligand having a hole transporting property are attached, a second emission layer disposed on the first emission layer, the second emission layer including a second light emitting particle on which a first ligand and a third ligand having an electron transporting property are attached, an electron transport layer disposed on the second emission layer, and a second electrode disposed on the electron transport layer, wherein a solubility of the second ligand in a solvent is different than a solubility of the third ligand in the solvent and a display device including the same.

Disclosed herein are exciton-blocking treatments for buffer layers used in organic photosensitive optoelectronic devices. More specifically, the organic photosensitive optoelectronic devices described herein include at least one self-assembled monolayer disposed on the surface of an anode buffer layer. Methods of preparing these devices are also disclosed. The present disclosure further relates to methods of forming at least one self-assembled monolayer on a substrate.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate (111) and one or more paint layer (106, 108, 110, 112, 114, 116, 120, 122) applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers includes a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

An organic light emitting diode panel and a fabrication method thereof are provided. The organic light emitting diode panel includes a substrate; a pixel defining layer disposed over a portion of the substrate; an organic light emitting diode device and an auxiliary cathode contacting device disposed over the substrate, wherein the organic light emitting diode device includes an anode layer, a hole injecting layer, a hole transporting layer, a light emitting layer, and an electron transporting layer sequentially formed over a portion of the substrate, and the auxiliary cathode contacting device includes an auxiliary cathode and a conductive contact sequentially formed over another portion of the substrate; a conductive contact, including a conductive mixture consisting of the electron transporting layer and a solvent material used to dissolve the electron transporting layer; and a transparent electrode layer, covering the electron transporting layer, the pixel defining layer, and the conductive contact.

An organic light emitting diode display device and a method of fabricating same are provided. The organic light emitting diode display includes an electron transport layer disposed on a light emitting layer, and material of the electron transport layer comprises a soluble organic electron transport material. The electron transport layer can be formed by ink and by inkjet printing.