An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

The present invention provides a resin composition having a high sensitivity and serving to produce a cured film with a low water absorption rate. The resin composition includes: (a) an alkali-soluble resin and (b1) an amido-phenol compound containing a phenolic hydroxyl group in which a monovalent group as represented by the undermentioned general formula (1) is located at the ortho position and/or (b2) an aromatic amido acid compound containing a carboxy group in which a monovalent group as represented by the undermentioned general formula (2) is located at the ortho position: ##STR00001##
wherein in general formula (1), X is a monovalent organic group having an alkyl group that contains 2 to 20 carbon atoms and bonds directly to the carbonyl carbon in general formula (1) or a monovalent organic group that has —(YO).sub.n—; and in general formula (2), U is a monovalent organic group that has an alkyl group containing 2 to 20 carbon atoms and bonding directly to the amide nitrogen in general formula (2) or a monovalent organic group that has —(YO).sub.n—; wherein Y is an alkylene group containing 1 to 10 carbon atoms and n is an integer of 1 to 20.

A display substrate according to the embodiment includes a base material containing chromium and iron, wherein the base material includes a surface portion and a central portion, the surface portion is defined as a depth region from a surface of the base material to a depth of 5 nm in a thickness direction of the base material, and a ratio of chromium atoms to iron atoms (Cr/Fe) of the surface portion is greater than that of the central portion.

A method of manufacturing an organic light-emitting display device is provided. The method includes: forming a lower electrode pattern on a substrate, which includes a transistor area and a capacitor area, to correspond to the transistor area and forming a buffer layer on the substrate including the lower electrode pattern; forming a thin-film transistor including an oxide semiconductor layer on the buffer layer; forming an interlayer insulating film on the thin-film transistor; forming a photoresist film pattern including first and second holes, which have different depths, on the interlayer insulating film; and forming a first contact hole, which exposes the lower electrode pattern, and second contact holes, which expose the oxide semiconductor layer, at the same time using the photoresist film pattern.

A display device includes a main display area in which main display elements are arranged and a component area in which auxiliary display elements and a transmission area are arranged, the display device including: a first pixel-defining layer arranged in the main display area, the first pixel-defining being between first pixel electrodes of the main display elements; a second pixel-defining layer arranged in the component area, the second pixel-defining layer being between second pixel electrodes of the auxiliary display elements; a black matrix arranged on the main display elements, the black matrix being around emission areas of the main display elements; and color filters arranged on the main display elements and the auxiliary display elements, the color filters being arranged to correspond to the emission areas of the main display elements and emission areas of the auxiliary display elements, respectively.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.

The present application relates to a mask, and a manufacturing method of the mask. The mask includes a transparent region corresponding to a pixel opening region of the display panel, a semi-transparent region corresponding to a pixel defining layer region of the display panel, and a non-transparent region corresponding to a support pillar region of the display panel. The transparent region and the non-transparent region are surrounded by the semi-transparent region.

An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

A method of manufacturing an optoelectronic device includes the successive steps of forming on a support first and second electrically-conductive pads; depositing an active organic layer covering the first and second electrically-conductive pads; depositing a first interface layer on the active organic layer in contact with the active organic layer; forming a first opening in the first interface layer and a second opening in the active organic layer in line with the first opening, to expose the second electrically-conductive pad; and forming a second interface layer at least partly extending in the first and second openings. The second interface layer is in contact with the first interface layer and with the second electrically-conductive pad.

A light emitting element include: a spherical conductive ball made of a metal material having conductivity; a light emitting layer covering a portion of a surface of the conductive ball; a metal layer formed on the light emitting layer; and an insulating layer covering at least a portion of a remaining portion of the surface of the conductive ball.