A solid state light-emitting device comprising: a first electrode coupled to a first charge injecting layer; a second electrode coupled to a second charge injecting layer; an emissive layer comprising a perovskite material, wherein the emissive layer is provided between the first and second charge injecting layers; and wherein the bandgaps of the first and second charge injecting layers are larger than the bandgap of the emissive perovskite layer.

Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

Described is an apparatus forming complementary tunneling field effect transistors (TFETs) using oxide and/or organic semiconductor material. One type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type material selected from a group consisting of Group III-V, IV-IV, and IV of a periodic table; a doped second region, formed above the substrate, having transparent oxide n-type semiconductor material; and a gate stack coupled to the doped first and second regions. Another type of TFET comprises: a substrate; a doped first region, formed above the substrate, having p-type organic semiconductor material; a doped second region, formed above the substrate, having n-type oxide semiconductor material; and a gate stack coupled to the doped source and drain regions. In another example, TFET is made using organic only semiconductor materials for active regions.

A display apparatus includes laminated glass comprising an interlayer film laminated between a pair of glass plates; and an irradiation device irradiating the laminated glass with light rays, wherein the interlayer film comprises a thermoplastic resin and a luminescent material, wherein an output of the light rays radiated from the irradiation device is equal to or less than 1 mW, and wherein the laminated glass emits light at a luminance of equal to or greater than 1 cd/m.sup.2 when being irradiated with the light rays.

A dental matrix according to the present invention comprises (a) a metal matrix band comprising an internal surface and an external surface; and (b) an organic light emitting diode (OLED) layer disposed on at least a first portion of the internal surface of the metal matrix band, the OLED layer comprising a first electroluminescent polymer disposed between a first and a second electrode layer. Applying an electrical current across the OLED generates light energy suitable for curing dental restoration material with the light energy being applied from the interproximal space.

Laminate, method of manufacturing laminate, transistor, and method of manufacturing transistor using a composition having the following (a) to (c): (a) a first organic compound represented by Formula (1) below (R represents a hydrogen atom or a glycidyl group. A plurality of Rs may be identical to or different from each other, but each of at least two Rs is a glycidyl group), (b) a second organic compound represented by Formula (2) below, and (c) a photocationic polymerization initiator

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A polymer comprising units α, β, γ and δ wherein: unit α is present at 30 mole % to 60 mole % and is an optionally substituted arylene; unit β is present at 1 mole % to 30 mole % and is a unit comprising an optionally substituted fluorene; unit γ is present at 1 mole % to 40 mole % and comprises aryl substituted nitrogen, or an optionally substituted triazine; unit δ is present at 0.5 mole % to 15 mole % and comprises an iridium complex; and optionally up to 20 mole % of other units if the total of α, β, γ and δ is less than 100 mole %.

This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.

A manufacturing method of electroluminescent devices includes: providing a first electrode; electrically depositing a first carrier injection layer on the first electrode to form a first electrode component; adopting a multiple transfer-print method to form a plurality of functional layers on the first electrode component in turn, one functional layer is manufactured by executing the transfer-print method once; and arranging a second electrode on the farthest functional layer away from the first carrier injection layer. The manufacturing method is capable of manufacturing the electroluminescent devices having a plurality of functional layers. The material utilization rate is high and the cost is low.

The invention provides novel hydrophilic conjugated polymers, e.g., hydrophilic poly(arylene vinylenes) or PAVs, and preparation thereof, and methods and devices for their application in photovoltaics, and the resulting improved solar cells.