Patent classifications
H10N30/045
METHOD FOR FORMING PIEZOELECTRIC FILMS ON SURFACES OF ARBITRARY MORPHOLOGIES
The present disclosure provides a method for forming piezoelectric films on surfaces of arbitrary morphologies. The method includes providing a sol for forming the piezoelectric film; spraying the sol onto the surface thereby forming a liquid film containing the sol on the surface; wiping the liquid film with a flattening tool for flattening the liquid film; drying the flattened liquid film thereby forming a gel layer; and annealing the gel layer thereby forming the piezoelectric film. The piezoelectric films with high uniformity and desired thickness can be formed on curved and even wrinkled surfaces by the present method.
Piezoelectric film and method for producing same
An object of the present invention is to improve the piezoelectricity of a PVT having the VDF ratio of 82 to 90% represented by a copolymer, in which copolymerization of vinylidene fluoride VDF and trifluoroethylene TrFe is 85 versus 15 (this is written as PVT85/15, and which is excellent in resistance to deformation, and heat resistance, etc. And therefore, it is also to obtain a piezoelectric film having piezoelectricity exceeding a PVT of less than 82 mol % of VDF represented by a PVT75/25, which conventionally shows the highest piezoelectricity, and a method of producing the same. A piezoelectric film is made of a mixture of two kinds (for example, a first copolymer is PVT85/15 and a second copolymer is PVT75/25) having different polymerization ratios of vinylidene fluoride VDF and trifluoroethylene TrFE.
Sensing film and method of making same and electronic device using sensing film
A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.
PIEZOELECTRIC DEVICE WITH PILLAR STRUCTURE AND METHOD OF MANUFACTURING
A piezoelectric device and method of manufacturing are described. A first substrate is provided with an array of pillars comprising piezoelectric material. A second substrate is provided with a piezoelectric layer facing respective ends of the pillars. The respective ends of the pillars are pushed into the piezoelectric layer, while the piezoelectric layer is at least partially liquid. The piezoelectric layer is solidified to form an integral connection between the piezoelectric layer and the pillars. The piezoelectric layer can thus form a bridging structure between the respective ends of the pillars. The integral piezoelectric structure can be poled by high voltage. The bridging structure can act as a platform for depositing electrical contacts. The piezoelectric device can be used for generating or detecting acoustic waves, e.g. in medical imaging.
System and method for a piezoelectric collagen scaffold
The present invention provides novel methods for poling piezoelectric materials, e.g., collagen, which are carried out in the absence of liquid media and at a relatively low temperature. The present invention also provides electroactive scaffolds comprising poled collagen for promoting cell growth and differentiation.
HAPTIC FEEDBACK BASE PLATE, HAPTIC FEEDBACK APPARATUS AND HAPTIC FEEDBACK METHOD
The present disclosure provides a haptic feedback base plate, a haptic feedback apparatus and a haptic feedback method. The haptic feedback base plate comprises: a substrate and a deformation unit disposed on one side of the substrate. The deformation unit comprises a first electrode, a piezoelectric material layer and a second electrode that are arranged in a stacked manner, the first electrode is arranged close to the substrate, the first electrode and the second electrode are configured to form an alternating electric field, and the piezoelectric material layer vibrates under the effect of the alternating electric field and drives the substrate to resonate, wherein a difference between a frequency of the alternating electric field and an inherent frequency of the substrate is less than or equal to a preset threshold.
DEVELOPMENT OF HIGH POWER TEXTURED PIEZOELECTRIC CERAMICS WITH ULTRAHIGH ELECTROMECHANICAL PROPERTIES FOR LARGE DRIVING FIELD APPLICATIONS
Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO.sub.3 (BT) template.
DEVELOPMENT OF HIGH POWER TEXTURED PIEZOELECTRIC CERAMICS WITH ULTRAHIGH ELECTROMECHANICAL PROPERTIES FOR LARGE DRIVING FIELD APPLICATIONS
Embodiments relate to a piezoelectric ceramic and methods of making the same that is suitable for use as a high-power piezoelectric ceramic, and in particular a piezoelectric ceramic that exhibits both good hard properties and good soft properties. Embodiments involve generating the piezoelectric ceramic via the combination of chemical modification/doping and/or a texturing method so that the piezoelectric material exhibits a large figure of merit, as well as other hard and soft properties. The chemical modification involves Cu and Mn doping a piezoelectric material composition having a relaxor-lead titanate based ferroelectric structure. The texturing involves templated grain growth (TGG) texturing using a BaTiO.sub.3 (BT) template.
POLYMER COMPOSITE PIEZOELECTRIC BODY, ELECTROACOUSTIC TRANSDUCTION FILM, AND ELECTROACOUSTIC TRANSDUCER
Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.
LAYERED SOLID STATE ELEMENT COMPRISING A FERROELECTRIC LAYER AND METHOD FOR MANUFACTURING THE SAME
A layered solid element includes a ferroelectric layer of a crystalline material Li.sub.1−x(Nb.sub.1−yTa.sub.y).sub.1+xO.sub.3+2x−z which has X- or 33° Y-orientation with respect to a substrate of the layered solid element. The ferroelectric layer is grown epitaxially from a buffer layer having of one of the chemical formulae L.sub.kNi.sub.rO.sub.1.5.Math.(k+r)+w or L.sub.n+1Ni.sub.nO.sub.3n+1+δ, where L is a lanthanide element. Such layered solid element may form a thin-film bulk acoustic resonator and be useful for integrated electronic circuits such as RF-filters, or guided optical devices such as integrated optical modulators.