A method of fabricating a device, comprising forming portions of electronic circuitry and a shadow wall structure over a substrate, and subsequently depositing a conducting layer over the substrate by angled deposition of a conducting material in at least a first deposition direction at an acute angle relative to the plane of the substrate. The shadow wall structure is arranged to cast a shadow in the deposition, leaving areas where the conducting material is not deposited. The shadow wall structure comprises one or more gaps each shorter than a shadow length of a respective part of the shadow wall structure casting the shadow into the gap, to prevent the conducting material forming in the gaps and to thereby create regions of said upper conducting layer that are electrically isolated from one another. These are arranged to form conducting elements for applying signals to, and/or receiving signals from, the electronic circuitry.

A method of fabricating a device, comprising forming portions of electronic circuitry and a shadow wall structure over a substrate, and subsequently depositing a conducting layer over the substrate by angled deposition of a conducting material in at least a first deposition direction at an acute angle relative to the plane of the substrate. The shadow wall structure is arranged to cast a shadow in the deposition, leaving areas where the conducting material is not deposited. The shadow wall structure comprises one or more gaps each shorter than a shadow length of a respective part of the shadow wall structure casting the shadow into the gap, to prevent the conducting material forming in the gaps and to thereby create regions of said upper conducting layer that are electrically isolated from one another. These are arranged to form conducting elements for applying signals to, and/or receiving signals from, the electronic circuitry.

Methods and devices for producing a superconductive conductor are disclosed. The method includes providing a plurality of conductive strips by means of a strip provision device, applying liquid soldering agent onto the plurality of conductive strips, stacking the conductive strips wetted with soldering agent, and forming a superconductive body by machining the strip stack.

Provided is a superconducting wire. The superconducting wire comprises a substrate, a superconducting film on the substrate and a pinning center in the superconducting film. The superconducting film includes Y.sub.1-xRE.sub.xBCO and the pinning center has an additive of Ba.sub.2YNbO.sub.6.

A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.

For producing an Nb3Sn superconductor wire, restack rod process (RRP) subelements (1a; 60a) are grouped to form a bundle having an approximately circular cross section and are arranged together with filling elements (18a-18c) in an internally and externally round outer tube (19; 52). To the inside the filling elements form a serrated profile (25) for abutment against the hexagonal subelements, and to the outside they form a round profile (24) for direct or indirect abutment in the outer tube. In fabricating the RRP subelements, and before a reshaping with a reduction in cross section, an externally hexagonal and internally round casing structure (9) is provided, into which the remaining parts of the subelements are inserted, in particular, an annular arrangement of hexagonal Nb-containing rod elements (4), which are surrounded externally by an outer matrix (7, 61) and internally by an inner matrix (3).

A superconductor tape and method for fabricating same are disclosed. Embodiments are directed to a superconductor tape including a substrate and a buffer stack. In one embodiment, the buffer stack includes: an Ion Beam-Assisted Deposition (IBAD) template layer above the substrate; a homo-epitaxial film of MgO or TiN above the IBAD template layer; an epitaxial film of silver above the homo-epitaxial film; and a homo-epitaxial film of LaMnO3 (LMO) above the silver epitaxial film. The superconductor tape also includes a superconductor film above the buffer stack. These and other embodiments achieve a LMO film with substantially improved texture, resulting in a superconductor structure having high critical current and significantly reduced power consumption and cost.

A superconducting nanowire single photon detector (SNSPD) device includes a substrate, a distributed Bragg reflector on the substrate, a seed layer of a metal nitride on the distributed Bragg reflector, and a superconductive wire on the seed layer. The distributed Bragg reflector includes a plurality of bi-layers, each bi-layer including lower layer of a first material and an upper layer of a second material having a higher index of refraction than the first material. The wire is a metal nitride different from the metal nitride of the seed material.

Provided is a connection body of high-temperature superconducting wire materials including a first oxide high-temperature superconducting wire material and a second oxide high-temperature superconducting wire material, characterized in that a first superconducting layer of the first oxide high-temperature superconducting wire material and a second superconducting layer of the second oxide high-temperature superconducting wire material are bonded together via a junction including M-Cu—O (wherein M is a single metal element or a plurality of metal elements included in the first superconducting layer or the second superconducting layer). The connection body may be, for example, a connection body of Bi2223 wire materials, and the junction may include CaCuO.sub.2.