A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability.

The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.

A magnetoresistance effect element is provided, which can, even in a region where the element size of the magnetoresistance effect element is small, implement stable record holding at higher temperatures, and moreover which has higher thermal stability. The magnetoresistance effect element has a configuration including reference layer (B1)/first non-magnetic layer (1)/first magnetic layer (21)/first non-magnetic insertion layer (31)/second magnetic layer (22). A magnetostatic coupling is established between the first magnetic layer (21) and the second magnetic layer (22) due to magnetostatic interaction becoming dominant.

According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.

Described is an apparatus which comprises: a heat spreading layer; a first transition metal layer adjacent to the heat spreading layer; and a magnetic recording layer adjacent to the first transition metal layer. Described is an apparatus which comprises: a first electrode; a magnetic junction having a free magnet; and one or more layers of Jahn-Teller material adjacent to the first electrode and the free magnet of the magnetic junction.

Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.

The present disclosure relates to magnetic devices. In particular, the disclosure relates to magnetic memory and logic devices that employ the voltage control of magnetic anisotropy (VCMA) effect for magnetization switching. The present disclosure provides a method for manufacturing a magnetic structure for such a magnetic device. The method comprising the following steps: providing a bottom electrode layer, forming a SrTiO.sub.3 (STO) stack on the bottom electrode layer by atomic layer deposition (ALD) of at least two different STO nanolaminates, forming a magnetic layer on the STO stack, and forming a perpendicular magnetic anisotropy (PMA) promoting layer on the magnetic layer, the PMA promoting layer being configured to promote PMA in the magnetic layer.

A method for forming a CoFeSiBPd alloy thin film exhibiting perpendicular magnetic anisotropy includes: simultaneously sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a CoFeSiBPd alloy thin film on a substrate disposed inside the vacuum chamber; and annealing the substrate, on which the CoFeSiBPd alloy thin film is formed, to exhibit perpendicular magnetic anisotropy.

A magnetic detection circuit for a magnetic random access memory (MRAM) is provided. The magnetic detection circuit includes a sensing array and a controller. The sensing array includes a plurality of sensing cells, and each of plurality of sensing cells includes a first magnetic tunnel junction (MTJ) device. The controller is configured to periodically write and read the sensing cells to obtain a difference between first data written to the sensing cells and second data read from the sensing cells. When the difference between the first data and the second data is greater than a threshold value, the controller is configured to stop a write operation of a plurality of memory cells of the MRAM until the difference between the first data and the second data is less than the threshold value.

A method for forming a multilayer thin film exhibiting perpendicular magnetic anisotropy includes alternately sputtering a CoFeSiB target and a Pd target inside a vacuum chamber to form a [CoFeSiB/Pd] multilayer thin film on a substrate disposed inside the vacuum chamber. The number of times the [CoFeSiB/Pd] multilayer thin film is stacked may be 3 or more.