An electron gun 901 capable of suppressing an uneven temperature distribution at an extraction electrode and a length-measuring SEM 900 are provided. The electron gun 901 is equipped with: a charged particle source 1; an extraction electrode 3 for extracting charged particles from the charged particle source 1 and allowing some of the charged particles to pass while blocking some other charged particles; and an auxiliary structure 5 disposed in contact with the extraction electrode 3. The length-measuring SEM 900 is equipped with the electron gun 901 and a computer system 920 for controlling the electron gun 901.

Electron beam spot characteristics can be tuned in each x-ray tube by moving a focusing-ring along a longitudinal-axis of the x-ray tube. The focusing-ring can then be immovably fastened to the x-ray tube.

An x-ray source can include an x-ray tube and a focusing-ring. The focusing-ring can at least partially encircle an electron-emitter, a cathode, an evacuated-enclosure, or combinations thereof. The focusing-ring can be located outside of a vacuum of the evacuated enclosure. The focusing-ring can adjust an electron-beam spot on a target material of the x-ray tube when moved along a longitudinal-axis extending linearly from the electron-emitter to the target material.

The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

The invention provides an exposure apparatus (100) including a formation module (122) which forms charged particle beams with different irradiation positions on a specimen. The formation module (122) includes: a particle source (20) which emits the charged particle beams from an emission region (21) in which a width in a longitudinal direction is different from and a width in a lateral direction orthogonal to the longitudinal direction; an aperture array device (60) provided with openings (62) arranged in an illuminated region (61) in which a width in a longitudinal direction is different from a width in a lateral direction orthogonal to the longitudinal direction; illumination lenses (30, 50) provided between the particle source (20) and the aperture array device (60); and a beam cross-section deformation device (40) which is provided between the particle source (20) and the aperture array device (60), and deforms a cross-sectional shape of the charged particle beams into an anisotropic shape by an action of a magnetic field or an electric field.

An electron gun device that emits an electron beam by heating to a high temperature in a vacuum. The surface of a material, which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation. The liquid hydrogenated metal is contained in a hollow cover tube container, which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container to a high temperature. The hydrogenated liquid metal is exposed from the cover tube container and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

An electron gun device that emits an electron beam by heating to a high temperature in a vacuum. The surface of a material, which emits an electron beam, is a hydrogenated metal that is melted and in a liquid state during a high-temperature operation. The liquid hydrogenated metal is contained in a hollow cover tube container, which is in a solid state during the high-temperature operation, in the form of a hydrogenated liquid metal or in the form of a liquid metal before hydrogenation, and heated together with the cover tube container to a high temperature. The hydrogenated liquid metal is exposed from the cover tube container and forms a liquid surface where gravity, the electric field and the surface tension of the liquid surface are balanced; and an electron beam is emitted from the exposed surface of the hydrogenated liquid metal.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

An inspection method for a substrate, the inspection method including: providing an electron beam having a first polarization state to a sample of the semiconductor substrate; detecting a first response signal of the sample caused by interaction of the electron beam having the first polarization state with the sample; providing an electron beam having a second polarization state to the sample of the semiconductor substrate; detecting a second response signal of the sample caused by interaction of the electron beam having the second polarization state with the sample; and determining a geometric or material property of the sample, based on the first response signal and the second response signal.

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.

An electron beam apparatus is disclosed that includes a plurality of current source elements disposed in at least one field emitter array. Each current source element can be a gated vertical transistor, an ungated vertical transistor, or a current controlled channel that is proximate to an optically-modulated current source. The electron beam apparatus includes a plurality of field emitter tips, each field emitter tip of the plurality of field emitter tips being coupled to a current source element of the plurality of current source elements. The electron beam apparatus is configured to allow selective activation of one or more of the current source elements.