A substrate processing apparatus includes: a plasma generating unit to excite a process gas into plasma state; a process chamber where a substrate is processed using the process gas excited in plasma state; a loading port installed at a sidewall of the process chamber, wherein the substrate is passed through the loading port when the substrate is loaded into the process chamber; a substrate support supporting the substrate in the process chamber; an electrode unit installed in the substrate support and including a plurality of divided electrodes; an impedance adjusting unit electrically connected to each of the plurality of electrodes to adjust an impedance thereof; and a control unit to control the impedance of the impedance adjusting unit so as to adjust the electrical potentials of the respective electrodes of the electrode unit. The substrate processing apparatus improves the uniformity of a substrate during a substrate processing process using plasma.

Methods are disclosed for depositing a thin film of compound material on a substrate. In some embodiments, a method of depositing a layer of compound material on a substrate include: flowing a reactive gas into a plasma processing chamber having a substrate to be sputter deposited disposed therein in opposition to a sputter target comprising a metal; exciting the reactive gas into a reactive gas plasma to react with the sputter target and to form a first layer of compound material thereon; flowing an inert gas into the plasma processing chamber; and exciting the inert gas into a plasma to sputter a second layer of the compound material onto the substrate directly from the first layer of compound material. The cycles of target poisoning and sputtering may be repeated until a compound material layer of appropriate thickness has been formed on the substrate.

The invention relates to a method for operating an arc source, whereby an electric spark discharge is ignited and run on the surface of a target and the spark discharge is simultaneously fed a direct current with an associated constant voltage DV as well as a pulsed current generated by a periodically applied voltage signal. The voltage at the arc source is boosted over several microseconds and the shape of the voltage signal is in essence arbitrarily selectable.

A method to filter macro particles in a cathodic arc physical vapor deposition (PVD) in vacuum is described, said method comprising the step of evaporating a material from a solid source (1) by means of application of the arc on the source, forming a plasma comprising electrons, micro particles (vapor) and ions of evaporated material, together with macro particles larger in size than the micro particles and ions. The arc is moved on the source at a speed V.sub.cs (superficial speed) at which the electrons, the micro particles and the ions of material evaporated at a point P.sub.2 deviate, from a path towards a substrate (2) to be coated facing the source, the macro particles formed at a point P.sub.1 previously passed over by the arc, so as to self-clean the plasma of the macro particles and allow condensation of only the cleaned plasma on the substrate.

This disclosure describes a non-dissipative snubber circuit configured to boost a voltage applied to a load after the load's impedance rises rapidly. The voltage boost can thereby cause more rapid current ramping after a decrease in power delivery to the load which results from the load impedance rise. In particular, the snubber can comprise a combination of a unidirectional switch, a voltage multiplier, and a current limiter. In some cases, these components can be a diode, voltage doubler, and an inductor, respectively.

Methods and systems are provided for increasing energy output from Z-pinch and other plasma confinement systems. In one example, a system may include memory storing instructions that, if executed by one or more processors, cause the system to adjust one or more parameters to generate a magnetic field which is sufficiently strong to axially compress a fuel gas to induce thermonuclear fusion and increase a fusion energy gain factor greater than a fusion energy gain factor limit attainable by the thermonuclear fusion. In certain examples, adjusting the one or more parameters may include adjusting a duty cycle of a discharge current applied to the fuel gas based, at least in part, on an amount of thermal collisions between fusion byproducts and the fuel gas. In certain examples, by adjusting the duty cycle, the magnetic field may be adjusted to induce or increase the thermal collisions.

A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

A substrate processing apparatus includes: a plasma generating unit to excite a process gas into plasma state; a process chamber where a substrate is processed using the process gas excited in plasma state; a loading port installed at a sidewall of the process chamber, wherein the substrate is passed through the loading port when the substrate is loaded into the process chamber; a substrate support supporting the substrate in the process chamber; an electrode unit installed in the substrate support and including a plurality of divided electrodes; an impedance adjusting unit electrically connected to each of the plurality of electrodes to adjust an impedance thereof; and a control unit to control the impedance of the impedance adjusting unit so as to adjust the electrical potentials of the respective electrodes of the electrode unit. The substrate processing apparatus improves the uniformity of a substrate during a substrate processing process using plasma.

The present disclosure is directed to a variable sintered coating or a variable microstructure coating as well as an apparatus and method of making such a variable coating onto substrates. The substrate has some electrical conductivity and is used as one electrode while an ionized gas is used as the other electrode that is moved over the areas of the powder coating to be sintered. An electrical current is used to cause a plasma produced through the gas, resulting in a combined energy and temperature profile sufficient for powder-powder and powder-substrate bonding. This preferred method is referred to as flame-assisted flash sintering (FAFS).

A coating system that reduces parasitic currents that may cause crazing in coatings on a substrate. In one example, the system includes a pair of low impedance shunt paths to ground for parasitic AC currents generated from the plasma in the chamber. The low impedance shunts may be provided through a balanced triaxial connection between a power supply of each chamber and the magnetrons of each chamber. In another example, potential differences between adjacent chambers are minimized through synchronized power supply signals between chambers.