An edge ring disposed around a processing target substrate includes a first member of an annular shape, which is made of a first material and has a first inclined portion at a lower portion of an inner peripheral side surface thereof; and a second member of an annular shape, which is made of a second material different from the first material and has a second inclined portion facing the first inclined portion, the second member being provided under the first member.

A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

A substrate processing method includes: a heating process of heating a substrate, which is placed on a stage disposed in a container and has a recess formed on one surface of the substrate, to a first temperature; a depositing process of depositing a thermally decomposable organic material on a front surface of the substrate by supplying a material gas into the container; and a removing process of removing the organic material deposited on a periphery of the recess and a back surface of the substrate, which is opposite to the one surface of the substrate, by holding the substrate at a position spaced apart from the stage and heating the substrate to a second temperature higher than the first temperature.

A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.

The present invention improves the in-plane uniformity of films formed via a plasma treatment. It is provided a plasma treatment device comprising: an electrode plate arranged in a reaction vessel; a counter electrode arranged parallel so as to opposite to the electrode plate in the reaction vessel; a transmission plate to supply frequency power to the electrode plate from outside of the reaction vessel, the transmission plate being connected from non-opposite side not opposing to the counter electrode of the electrode plate; and an insulator with a container shape, the insulator being arranged in the reaction vessel and storing the electrode plate therein; wherein the non-opposite side of the electrode plate closely contacts to an inner bottom surface of the insulator with the container shape, wherein a side surface of the electrode plate closely contacts to an inner side surface of the insulator with the container shape, and wherein a hole edge portion of the insulator with the container shape is formed so as to protrude toward a counter electrode side.

The present invention provides an electronic or electrical device or component thereof comprising a cross-linked polymeric coating on a surface of the electronic or electrical device or component thereof; wherein the cross-linked polymeric coating is obtainable by exposing the electronic or electrical device or component thereof to a plasma comprising a monomer compound and a crosslinking reagent for a period of time sufficient to allow formation of the cross-linked polymeric coating on a surface thereof,

wherein the monomer compound has the following formula:

##STR00001##

where R.sub.1, R.sub.2 and R.sub.4 are each independently selected from hydrogen, optionally substituted branched or straight chain C.sub.1-C.sub.6 alkyl or halo alkyl or aryl optionally substituted by halo, and R.sub.3 is selected from:

##STR00002##

where each X is independently selected from hydrogen, a halogen, optionally substituted branched or straight chain C.sub.1-C.sub.6 alkyl, halo alkyl or aryl optionally substituted by halo; and n.sub.1 is an integer from 1 to 27; and wherein the crosslinking reagent comprises two or more unsaturated bonds attached by means of one or more linker moieties and has a boiling point at standard pressure of less than 500° C.

In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

A SiC coat having an outer surface including a back face, a front face opposite to the back face, a first side face extending in a direction from the back face toward the front face, and a first R-surface between the back face and the first side face, the SiC coat including: an overcoat configured to include a first upper layer side-face portion that forms the first side face and the first R-surface of the outer surface; and an undercoat configured to include a backface portion that forms the back face of the outer surface and a first lower layer side-face portion covered by the first upper layer side-face portion of the overcoat, wherein the first upper layer side-face portion and the backface portion form a first interface, and the first interface appears on the first R-surface of the outer surface.

Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon.