A plasma processing apparatus includes a plasma generator provided with a plasma electrode and performs plasma processing on a substrate accommodated in a processing container. At least a region corresponding to the plasma electrode of the plasma generator is formed of synthetic quartz.

Cathode structures are disclosed for use with pulsed cathodic arc deposition systems for forming diamond-like carbon (DLC) films on devices, such as on the sliders of hard disk drives. In illustrative examples, a base layer composed of an electrically- and thermally-conducting material is provided between the ceramic substrate of the cathode and a graphitic paint outer coating, where the base layer is a silver-filled coating that adheres to the ceramic rod and the graphitic paint. The base layer is provided, in some examples, to achieve and maintain a relatively low resistance (and hence a relatively high conductivity) within the cathode structure during pulsed arc deposition to avoid issues that can result from a loss of conductivity within the graphitic paint over time as deposition proceeds. Examples of suitable base material compounds are described herein where, e.g., the base layer can withstand temperatures of 1700° F. (927° C.).

A plasma source assembly for use with a substrate processing chamber is described. The assembly includes a ceramic lower plate with a plurality of apertures formed therein. A method of processing a substrate in a substrate processing chamber including the plasma source assembly is also described.

A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

A charged particle multi-beam device includes a charged particle source, a collimator lens, a multi-light-source forming unit, and a reduction projection optical system. The multi-light-source forming unit has first to third porous electrodes disposed side by side in an optical axis direction. A plurality of holes for causing the multi-beams to pass is formed in each of the first to third porous electrodes. The first porous electrode and the third porous electrode have the same potential and the second porous electrode has potential different from the potential of the first porous electrode and the third porous electrode. A diameter of the holes on the second porous electrode is formed larger further away from an optical axis such that a surface on which the multi-light sources are located is formed in a shape convex to the charged particle source side.

[Problem] A substrate treatment apparatus that can protect an AC power supply connected to a heater is provided.

[Means for solving the problem] A substrate treatment apparatus includes a lower electrode formed of a dielectric, a first AC power supply that is connected to a first internal electrode included in the lower electrode and supplies AC power with a first frequency, a heater included in the lower electrode to heat the lower electrode, a filter circuit connected to the heater, and a second AC power supply connected to the heater via the filter circuit and used for the heater, in which the filter circuit includes a parallel circuit that connects a low-pass filter with a cut-off frequency that is lower than the first frequency and a high-pass filter with a cut-off frequency that is higher than the first frequency in parallel.

Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

A method for joining quartz pieces using metallic aluminum as the joining element. The aluminum may be placed between two quartz pieces and the assembly may be heated in the range of 500 C to 650 C. The joining atmosphere may be non-oxygenated. A method for the joining of quartz pieces which may include barrier layers on the quartz pieces. The barrier layers may be impervious to aluminum diffusion and may be of a metal oxide or metal nitride. The quartz pieces with the barrier layers may then be joined at temperatures higher than 650 C and less than 1200 C. A device such as an RF antenna or electrode in support of semiconductor processing using joined quartz pieces wherein the aluminum joining layer which has joined the pieces and also functions as antenna electrode.

The disclosed technology relates to methods, apparatuses and systems for detecting molecules using surface plasmon resonance techniques, and more particularly to surface plasmon resonance techniques that employ metal nanoparticles formed on substrates. In one aspect, method of making a layer of metallic nanoparticles includes providing a liquid composition comprising a binder polymer and a solvent and at least partially immersing, into the liquid composition, an article comprising a polymeric surface, wherein the polymeric surface comprises a polymeric material and does not comprise an inorganic glass or crystalline material. The method additionally includes applying a gas phase plasma to the liquid composition to facilitate chemical reactions between the binder polymer and the polymeric material of the polymeric surface to form a binder layer on the polymeric surface of the article. The method further includes applying metallic nanoparticles onto the binder layer to form a metallic nanoparticle layer on the binder layer.

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.