The present disclosure is directed to a showerhead for distributing plasma. The showerhead includes a perforated tile coupled to a support structure. A dielectric window is disposed over the perforated tile. An electrode is coupled to the dielectric window. An inductive coupler is disposed over the dielectric window. At least a portion of the inductive coupler is angled relative to at least a portion of the electrode.

A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber comprising a support, the support configured to have mounted thereon a substrate; at least one channel disposed in the chamber and into which a conductive fluid or a non-conductive fluid is configured to be injected; and a control unit. The control unit includes a first pump and a second pump configured to respectively supply the conductive fluid and the non-conductive fluid to the at least one channel; and a first valve configured to receive the conductive fluid and the non-conductive fluid from the first pump and the second pump, respectively, and control proportions at which the conductive fluid and the non-conductive fluid are injected into the at least one channel.

A plasma processing apparatus for performing plasma processing on a substrate includes: a plasma generator configured to generate plasma in a processing container; a support structure configured to mount the substrate on a tilted mounting surface in the processing container and rotatably support the substrate; a first slit plate made of quartz and provided between the plasma generator and the support structure, the first slit plate having first slits formed in the first slit plate; and a second slit plate made of quartz and provided between the plasma generator and the support structure and below the first slit plate, the second slit plate having second slits formed in the second slit plate, wherein the first slits are staggered from adjacent ones of the second slits in a reverse direction of a tilting direction of the mounting surface.

Disclosed is a plasma processing system with a faraday shielding device. The plasma processing system comprises a reaction chamber, and a faraday shielding device and an air inlet nozzle which are located on the reaction chamber. The air inlet nozzle penetrates through the faraday shielding device to introduce process gas into the reaction chamber. The air inlet nozzle is made of a conductive material, and the air inlet nozzle is electrically connected to the faraday shielding device. According to the plasma processing system, the air inlet nozzle made of the conductive material is electrically connected to the faraday shielding device, when the cleaning process is carried out, reaction gas of the cleaning process in the projection area of the air inlet nozzle is also electrically isolated, the reaction gas of the cleaning process forms a capacitive coupling plasma in the whole region below a dielectric window.

Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.

A substrate processing method includes a protective film forming step, an insulating material depositing step, a protective film removing step, and a metal material depositing step. In the protective film forming step, a protective film is formed on a metal film among the metal film and an insulating film exposed on the surface of a substrate, using a film-forming material that is selectively adsorbed onto the metal film. In the insulating material depositing step, after the protective film forming step, an insulating material is deposited on the surface of the insulating film using an atomic layer deposition method. In the protective film removing step, the protective film is removed from the surface of the metal film after the insulating material depositing step. In the metal material depositing step, a metal material is deposited on the metal film after the protective film removing step.

An object of the invention is to provide a plasma processing apparatus capable of both isotropic etching in which a flux of ions to a sample is reduced and anisotropic etching in which ions are incident on a sample in the same chamber. For this purpose, the invention includes: a processing chamber in which a sample is subjected to plasma processing; a radio frequency power source configured to supply radio frequency power for generating plasma through a first member of a dielectric material disposed above the processing chamber; a magnetic field forming mechanism configured to form a magnetic field inside the processing chamber; a sample stage where the sample is placed; and a second member disposed between the first member and the sample stage and having a through hole formed therein, in which the through hole is formed at a position where a distance thereof from a center of the second member is a predetermined distance or more, and a distance from the first member to the second member is a distance such that a density of plasma generated between the first member and the second member is a cutoff density or higher.

The present disclosure relates to plasma dicing of wafer. More specifically, the present disclosure is directed to frame masks and methods for plasma dicing wafers utilizing frame masks. The frame mask includes a mask frame, wherein the mask frame includes a top ring mask support and a side ring mask support. A plurality of mask segments suspended from the top ring mask support by segment supports, the mask segments are configured to define dicing channels on a blank wafer. The frame mask is configured to removably sit onto a frame lift assembly in a plasma chamber of a plasma dicing tool, when fitted onto the frame lift assembly, the mask segments are disposed above a wafer on a wafer ring frame for plasma dicing. The mask frame is configured to enable flow of plasma therethrough to the wafer to etch the wafer to form dicing channels defined by the mask segments.

Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.

A Faraday shielding apparatus includes a Faraday shielding plate and a heating circuit; the Faraday shielding plate includes a conductive ring and a plurality of conductive petal-shaped members radially symmetrically connected to the outer periphery of the conductive ring; when the heating circuit is used in the etching process, the Faraday shielding plate is heated by electricity. During the etching process, the heating circuit is conductively connected to the Faraday shielding plate, increasing the temperature of the Faraday shielding plate when it is energized, heating a medium window and reducing the amount of product deposits. During the cleaning process, the heating circuit and the Faraday shield are turned off, and the Faraday shielding plate is connected to a shielding power supply to clean the dielectric window. The output terminal of the heating power supply is filtered by way of a filter circuit unit, then connected to the Faraday shielding plate.