A member for semiconductor manufacturing apparatus includes a ceramic plate that has an upper surface including a wafer placement surface and resin porous plugs that have upper surfaces that are exposed from the wafer placement surface. The resin porous plugs are press-fitted and secured in plug insertion holes that extend through the ceramic plate in an up-down direction and allow gas to flow.

An ejector pin structure at least includes an end part and an ejector rod. The end part includes a convex structure and an inverted trapezoid-like structure located below the convex structure. The convex structure is configured to support an object to be processed. A projection area of the convex structure in a horizontal plane is less than a projection area of the inverted trapezoid-like structure in the horizontal plane.

There is provided a filter device. In the filter device, a plurality of coils are arranged coaxially. Each of a plurality of wirings is electrically connected to one end of each of the coils. Each of a plurality of capacitors is connected between the other end of each of the coils and the ground. A housing is electrically grounded and configured to accommodate therein the coils. Further, each of the wirings at least partially extends into the housing and has a length that is adjustable in the housing.

An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

Provided is a substrate support unit including an electrostatic chuck configured to fix a wafer, an insulating isolation unit, which is arranged below the electrostatic chuck and is configured to insulate the electrostatic chuck, and a ground plate arranged below the insulating isolation unit, wherein the electrostatic chuck, the insulating isolation unit, and the ground plate are spaced apart from each other in a vertical direction, and a lower surface of the electrostatic chuck, a surface of the insulating isolation unit, or a surface of the ground plate has hydrophobicity.

A substrate support includes a heater body, a heater element, and a heater terminal. The heater body is formed from a ceramic material and has upper and lower surfaces separated by a thickness. The heater element is arranged between the upper and lower surfaces and is embedded within the ceramic material forming the heater body. The heater terminal is arranged between the upper and lower surfaces, is electrically connected to the heater element, and has an electrode surface and a rounded surface. The electrode surface opposes the lower surface to flow an electric current to the heater element. The rounded surface opposes the upper surface and is embedded within the ceramic material to limit stress within the ceramic material during heating of a substrate seated on the upper surface of the heater body. Semiconductor processing systems and methods of making substrate supports for semiconductor processing systems are also described.

Disclosed herein is a temperature actuated valve, including a stationary member and a movable member, wherein the stationary member is configured to receive the movable member. A first flow path is defined between an outer surface of the stationary member and an inner surface of a housing and a second flow path defined by and within the movable member. The temperature actuated valve further includes at least one temperature actuated member having a first end seated against a base of the stationary member and a second end seated against a base of the movable member. The temperature actuated valve further includes a bias member having a first end connected to the base of the stationary member and a second end connected to the base of the movable member, the at least one temperature actuated member configured to compress at a first temperature and expand at a second temperature.

Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a substrate processing chamber includes a ceramic plate having a first side configured to support a substrate and a second side opposite the first side, wherein the ceramic plate includes an electrode embedded in the ceramic plate; a ceramic ring disposed about the ceramic plate and having a first side and a second side opposite the first side, wherein the ceramic ring includes a chucking electrode and a heating element embedded in the ceramic ring; and a cooling plate coupled to the second side of the ceramic plate and the second side of the ceramic ring, wherein the cooling plate includes a radially inner portion, a radially outer portion, and a thermal break disposed therebetween.