A sputtering target includes an indium cerium zinc oxide represented by In.sub.2Ce.sub.xZnO.sub.4+2x, wherein x=0.52. A relative density of the sputtering target is larger than or equal to 90%. A bulk resistance of the sputtering target in a range from about 10.sup.2 cm to about 10 cm. A weight percentage of crystalline In.sub.2Ce.sub.xZnO.sub.4+2x in the sputtering target is larger than 80%.

Provided is a shutter mechanism for opening and closing a substrate-facing surface (30) of a target (3). The shutter mechanism is provided with: a shutter (6) having first and second shutter plates (11A, 11B) having first and second edge parts (30a, 30b), respectively; and first and second rotary support parts (13A, 13B) for supporting the first and second shutter plates (11A, 11B) so as to be able to rotate about first and second rotary shafts (SA, SB) extending in the direction of a line normal to the substrate-facing surface (30) so that the first and second shutter plates (11A, 11B) can move between an open position and a closed position at which the first and second edge parts (30a, 30b) overlap. The first and second rotary shafts (13A, 13B) are disposed so as to be divided toward both sides with an overlap region of the first and second edge parts (30a, 30b) therebetween so that the first and second edge parts (30a, 30b) in the open position thereof extend along sides of the substrate-facing surface (30).

The invention relates to a sputtering target, a coating system, and a coating method for same. The sputtering target comprises a base plate with a target plate which is secured thereon and which is made of a first sputtering material with a surface and a plurality of recesses formed therein. A plurality of inserts are arranged in the recesses. At least some of the inserts are made of a second sputtering material, wherein the second sputtering material has a higher sputter yield than the first sputtering material. The aim of the invention is to achieve especially uniform coatings. This is achieved in that the inserts made of the second sputtering material are shaped such that the extent D1, D2 of the inserts, measured in a measuring direction parallel to the surface, increases from the surface to the base plate in a depth direction T.

A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.

A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being rotatable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation.

A method for forming a high purity, copper indium gallium selenide (CIGS) sputtering target is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.

A sputter device for depositing a layer on a substrate in a vacuum chamber and having a layer property in each point of the substrate surface. The sputter device comprises at least one end block adapted for holding a cylindrical target having a longitudinal axis in a first direction, and a first drive means for providing a rotational movement of the at least one cylindrical target around its longitudinal axis. The sputter device includes a second drive means for applying a translational movement to an end block in a second direction. The first and the second drive means are adapted for, during sputtering, being simultaneously operational in the vacuum chamber. The movement of the first drive means does not impact the uniformity of the layer sputtered on the substrate in the direction on the surface of the substrate corresponding to a perpendicular projection of the second direction onto the substrate.

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

An apparatus designed to sputter a material onto a plurality of substrates includes a rotating metal frame, a plurality of carriers, and an insulator disposed between the metal frame and the plurality of carriers. The plurality of carriers are designed to hold one or more fixtures that secure the plurality of substrates, and each of the plurality of carriers is designed to couple to the metal frame. The insulator is disposed between the metal frame and the plurality of carriers at locations where the plurality of carriers are coupled to the metal frame such that the plurality of carriers are electrically isolated from the metal frame.

A method for forming a high purity, copper indium gallium selenide (CIGS) bulk material is disclosed. The method includes sealing precursor materials for forming the bulk material in a reaction vessel. The precursor materials include copper, at least one chalcogen selected from selenium, sulfur, and tellurium, and at least one element from group IIIA of the periodic table, which may be selected from gallium, indium, and aluminum. The sealed reaction vessel is heated to a temperature at which the precursor materials react to form the bulk material. The bulk material is cooled in the vessel to a temperature below the solidification temperature of the bulk material and opened to release the formed bulk material. A sputtering target formed by the method can have an oxygen content of 10 ppm by weight, or less.