A method for preparing a self-supporting substrate includes: preparing a thin film base structure including a first substrate layer, a thin film layer and a second substrate layer stacked in sequence; removing the first substrate layer from the thin film layer; continuing to grow a material the same as that of the thin film layer on a side of the thin film layer far away from the second substrate layer to prepare a thick film layer; and removing the second substrate layer from the thick film layer and remaining the thick film layer. In the method, a thin film may be grown on a substrate that has a larger diameter, and a thinness of the thin film will not cause the thin film and/or the substrate to crack. Therefore, a thin film that has a large diameter may be obtained so as to obtain a large-sized self-supporting thick film substrate.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

A method for manufacturing an SOI wafer having SOI layer includes a thinning step to adjust SOI film thickness of the SOI wafer, including the steps of: (A1) measuring the SOI film thickness of the SOI wafer having the SOI layer before the thinning step; (A2) determining rotational position of the SOI wafer in the thinning step on the basis of a radial SOI film thickness distribution obtained in the measuring of the film thickness and previously determined radial stock removal distribution in the thinning step, and rotating the SOI wafer around the central axis thereof so as to bring the SOI wafer to the determined rotational position; and (A3) thinning the SOI layer of the rotated SOI wafer. The method for manufacturing the SOI wafer can produce an SOI wafer with an excellent radial film thickness uniformity of the SOI layer after the thinning step.

A method for producing a composite silicon carbide structure comprises: providing an initial substrate of monocrystalline silicon carbide; depositing an intermediate layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the initial substrate, the intermediate layer having a thickness greater than or equal to 1.5 microns; implanting light ionic species through the intermediate layer to form a buried brittle plane in the initial substrate, delimiting the thin layer between the buried brittle plane and the intermediate layer, and depositing an additional layer of polycrystalline silicon carbide at a temperature higher than 1000° C. on the intermediate layer, the intermediate layer and the additional layer forming a carrier substrate, and separating the buried brittle plane during the deposition of the additional layer.

This invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate; growing a first insulating layer on a top surface of the first semiconductor substrate for forming a first wafer; irradiating the first semiconductor substrate via a ion beam for forming a doping layer to a pre-determined depth from a top surface of the first insulating layer; providing a second substrate; growing a second insulating layer on a top surface of the second semiconductor substrate for forming a second wafer; bonding the first wafer with the second wafer; annealing the first wafer and second wafer at a deuterium atmosphere; separating a part of the first wafer from the second wafer; and forming a deuterium doped layer on the second wafer.

A method of healing defects generated in a semiconducting layer by implantation of species made in a substrate to form therein an embrittlement plane separating a solid part of the substrate from the semiconducting layer, the semiconducting layer having a front face through which the implanted species pass. The method comprises local annealing of the substrate causing heating of the semiconducting layer, the intensity of which decreases from the front face towards the embrittlement plane. The local annealing may comprise a laser irradiation of a front surface of the substrate.

Methods for obtaining a free-standing thick (>5 μm) epitaxial material layer or heterostructure stack and for transferring the thick epitaxial layer or stack to an arbitrary substrate. A thick epitaxial layer or heterostructure stack is formed on an engineered substrate, with a sacrificial layer disposed between the epitaxial layer and the engineered substrate. When the sacrificial layer is removed, the epitaxial layer becomes a thick freestanding layer that can be transferred to an arbitrary substrate, with the remaining engineered substrate being reusable for subsequent material layer growth. In an exemplary case, the material layer is a GaN layer and can be selectively bonded to an arbitrary substrate to selectively produce a Ga-polar or an N-polar GaN layer.

A substrate for group-III nitride epitaxial growth and a method for producing the same is capable of fabricating a high-quality group III nitride single crystal at low cost. The substrate for group-III nitride epitaxial growth includes: a supporting substrate having a structure in which a core consisting of nitride ceramics is wrapped in an encapsulating layer having a thickness of between 0.05 μm and 1.5 μm, inclusive; a planarizing layer provided on an upper surface of the supporting substrate, the planarizing layer having a thickness of between 0.5 μm and 3.0 μm, inclusive; and a seed crystal layer consisting of a single crystal with a thickness of between 0.1 μm and 1.5 μm, inclusive, provided on an upper surface planarizing layer and having an uneven pattern on the surface.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

There is provided a method for manufacturing a SiC device wafer comprising the steps: a) slicing and polishing a SiC boule to thicker substrates compared to the usual thickness in the prior art, b) creating a device wafer on the substrate, c) removing the device wafer from the remaining substrate, d) adding SiC to the remaining substrate so that the original thickness of the substrate is essentially restored, and repeating steps b)-d). The removal of the device wafer can be made for instance by laser slicing. Advantages include that the SiC material loss is significantly decreased and the boule material used for device wafers is considerably increased, the substrates become more stable especially during high temperature processes, the warp and bow is reduced, the risk of breakage is decreased.