A device for cleaning a wafer in a semiconductor manufacturing apparatus includes a showerhead and an adjustable distributor assembly. The showerhead is disposed over a wafer stage within a cleaning chamber and configured to eject cleaning material through the showerhead towards a cleaning surface of a wafer. The adjustable distributor assembly is disposed within the showerhead through which the cleaning material passes. The adjustable distributor assembly includes a base sheet and a plurality of control sheets. The base sheet includes base openings, and the plurality of control sheets include control openings and are configured to slidably mate with the base sheet to provide selectively adjustable openings.

A method for manufacturing a memory includes: providing a substrate having a core region provided with a word line; forming a dielectric layer on the substrate, and etching the dielectric layer to form a first filling hole exposing the word line; forming a barrier layer on a hole wall of the first filling hole, where the barrier layer located in the first filling hole surrounds and forms a first intermediate hole exposing the word line; etching the word line exposed in the first intermediate hole to remove a first residue on the word line; and forming in the first intermediate hole a first wire electrically connected to the word line.

A substrate processing method includes a substrate holding step of holding a substrate having a front surface on which a metal is exposed, an inert gas replacing step of replacing an atmosphere around the front surface of the substrate with an inert gas by supplying an inert gas to a vicinity of the front surface of the substrate, an adjusting step of adjusting a pH of the rinsing liquid so as to form an inactive state in which the metal does not react with the rinsing liquid or so as to form a passive state by allowing the metal to react with the rinsing liquid, and a rinsing liquid supplying step of supplying the rinsing liquid whose pH has been adjusted to the front surface of the substrate after the atmosphere around the front surface of the substrate has been replaced with the inert gas.

A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

A treatment liquid contains water, hydroxylamine, and one or more kinds of hydrazines selected from the group consisting of hydrazine, a hydrazine salt, and a hydrazine derivative, in which a total content of the hydrazines is 1 part by mass or less with respect to 100 parts by mass of the hydroxylamine.

The present application provides a method for improving a pit defect formed after a copper electroplating process, comprising: forming a dielectric layer on a wafer; etching the dielectric layer to form a trench; forming a seed barrier layer on the surface of the trench; pre-cleaning the wafer to increase the wetness of the trench on the wafer; filling the trench with copper by means of electroplating; polishing the upper surface of the trench to planarize the upper surface of the trench. The wetness of the wafer surface can be increased by pre-cleaning a via. An excessively dry wafer surface leads to a poor wetness effect when the wafer enters water, a bubble is difficult to be discharged, a void is easy to be generated in electroplating. By the pre-cleaning step, the problem of a poor wetness effect occurring when the wafer enters water can be effectively improved.

The substrate processing method includes a hydrophilization step of hydrophilizing a surface of a substrate, a processing liquid supplying step of supplying a processing liquid to the hydrophilized surface of the substrate, a processing film forming step in which the processing liquid supplied to the surface of the substrate is solidified or cured to form a processing film on the surface of the substrate, and a peeling step in which a peeling liquid is supplied to the surface of the substrate to peel the processing film from the surface of the substrate. The peeling step includes a penetrating hole forming step in which the processing film is partially dissolved in the peeling liquid to form a penetrating hole in the processing film.

Embodiments of the present disclosure generally relate to methods for forming or otherwise producing metal silicides on a silicon surface of substrate. Exemplary metal silicides can be or include titanium silicide, cobalt silicide, nickel silicide, molybdenum silicide, or alloys thereof. In one or more embodiments, a method of forming a metal silicide is provided and includes removing a native oxide from a substrate to reveal a silicon surface of the substrate during a cleaning process, depositing a metallic layer on the silicon surface during a deposition process, and heating the substrate contained within a process region containing hydrogen gas during a silicidation process to produce a metal silicide layer on the substrate from the metallic layer and the silicon surface.

Methods and apparatuses for the production of HF in an electron-beam generated plasma. A gas containing fluorine, hydrogen, and an inert gas such as argon, e.g., Ar/SF.sub.6/H.sub.2O or Ar/SF.sub.6/NH.sub.3 flows into a plasma treatment chamber to produce a low pressure gas in the chamber. An electron beam directed into the gas forms a plasma from the gas, with energy from the electron beam dissociating the F-containing molecules, which react with H-containing gas to produce HF in the plasma. Although the concentration of the gas phase HF in the plasma is a very small fraction of the total gas in the chamber, due to its highly reactive nature, the low concentration of HF produced by the method of the present invention is enough to modify the surfaces of materials, performing the same function as aqueous HF solutions to remove oxygen from an exposed material.

The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.