Providing a substrate cleaning device and a substrate cleaning method having high detergency. Provided is a substrate cleaning device including: a substrate rotating mechanism that rotates a substrate; and a first nozzle and a second nozzle that eject an ultrasonic cleaning solution toward a predetermined surface of the substrate that is rotated, wherein the first nozzle and the second nozzle are held in one casing.

An epitaxial wafer cleaning method for cleaning a wafer having an epitaxial film formed on a front surface thereof, including: a first cleaning step of supplying a cleaning solution containing O.sub.3 to all surfaces, including front, back, and end surfaces, of the wafer to perform spin cleaning; a second cleaning step of supplying a cleaning solution to the back and end surfaces of the wafer to perform cleaning with a roll brush after the first cleaning step; a third cleaning step of supplying a cleaning solution containing O.sub.3 to the front surface of the wafer to perform spin cleaning after the second cleaning step; and a fourth cleaning step of supplying a cleaning solution containing HF to the front surface of the wafer to perform spin cleaning after the third cleaning step.

A treatment liquid for cleaning a semiconductor wafer is a treatment liquid contains (A) a hypochlorite ion and (C) a solvent, in which pH at 25 C. is more than 7 and less than 12.0. A method for removing ruthenium and tungsten from a semiconductor wafer and cleaning the semiconductor wafer includes bringing the treatment liquid into contact with the semiconductor wafer containing ruthenium or tungsten is provided.

A method for manufacturing a thin substrate uses a temporary adhesive film for substrate processing for temporarily adhesion of a substrate to a support on a surface of the substrate opposite to a surface to be processed, the temporary adhesive film for substrate processing containing a siloxane bond-containing polymer having a weight average molecular weight of 3,000 to 500,000 in an amount of 10 parts by mass or more and 100 parts by mass or less relative to 100 parts by mass; and includes: (a) laminating the temporary adhesive film for substrate processing onto the support and/or the surface of the substrate opposite to the surface to be processed; (b) bonding thereof under reduced pressure; (c) processing the substrate by grinding or polishing; (d) treating the substrate with acid or base; (e) other processing; (f) separating the processed substrate from the support; and (g) cleaning the substrate.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

An outer peripheral end of a substrate is held with a plurality of chuck pins provided at a spin plate abutting against a plurality of portions of the outer peripheral end of the substrate, and the spin plate is rotated about a rotation axis. A cleaning head is moved by a head moving mechanism while being pressed against a back surface of the substrate held by the plurality of chuck pins by the head moving mechanism, and foreign matter on the back surface of the substrate is removed by polishing with the cleaning head. A reaction force against a load applied to the back surface of the substrate by the cleaning head is generated in the substrate by auxiliary pins. Alternatively, the back surface of the substrate, which has been cleaned or is being cleaned by the cleaning head, is further cleaned by a cleaning brush.

Disclosed is a substrate processing apparatus including: a substrate holding member that holds a peripheral portion of a substrate; a rotating member that includes a plate provided with the substrate holding member and rotates the substrate by rotating the plate; a fluid supply unit that is disposed at a center of the rotating member and supplies a processing liquid and an inert gas to a lower surface of the substrate held by the substrate holding member; and a controller that controls to perform a liquid processing by supplying the processing liquid to the lower surface of the substrate while rotating the substrate, and, after the liquid processing, to perform a drying processing of the substrate while supplying the inert gas to the lower surface of the substrate.

A photoresist layer is coated over a wafer. The photoresist layer includes a metal-containing material. An extreme ultraviolet (EUV) lithography process is performed to the photoresist layer to form a patterned photoresist. The wafer is cleaned with a cleaning fluid to remove the metal-containing material. The cleaning fluid includes a solvent having Hansen solubility parameters of delta D in a range between 13 and 25, delta P in a range between 3 and 25, and delta H in a range between 4 and 30. The solvent contains an acid with an acid dissociation constant less than 4 or a base with an acid dissociation constant greater than 9.

A substrate processing method includes a sublimable-substance-containing liquid film forming step of supplying a sublimable-substance-containing liquid to a surface of a substrate on which a pattern is formed, so that a liquid film of the sublimable-substance-containing liquid covering the surface of the substrate is formed on the surface of the substrate, a transition state film forming step of evaporating the solvent from the liquid film to form solids of the sublimable substance, so that a transition state film, that is in a pre-crystal transition state before the solids of the sublimable substance crystallize, is formed on the surface of the substrate, and a transition state film removing step of sublimating the solids of the sublimable substance on the surface of the substrate while maintaining the solids of the sublimable substance in the pre-crystal transition state, so that the transition state film from the surface of the substrate is removed.

A substrate processing apparatus includes: a first holding part configured to hold a substrate; a second holding part configured to hold the substrate; a sliding member configured to rotate about a vertical axis so that the sliding member slides on a back surface of the substrate; a revolution mechanism configured to revolve the sliding member under rotation about a vertical revolution axis; and a relative movement mechanism configured to horizontally move a relative position between the substrate and a revolution trajectory of the sliding member so that when the substrate is held by the first holding part, the sliding member slides on a central portion of the back surface of the substrate, and when the substrate is held by the second holding part, the sliding member slides on the peripheral portion of the back surface of the substrate under rotation.