A self-assembled nanostructure comprises first domains and second domains. The first domains comprise a first block of a block copolymer material and an activatable catalyst. The second domains comprise a second block and substantially without the activatable catalyst. The activatable catalyst is capable of generating catalyst upon application of activation energy, and the generated catalyst is capable of reacting with a metal oxide precursor to provide a metal oxide. A semiconductor structure comprises such self-assembled nanostructure on a substrate.

A method for forming a semiconductor device includes depositing a metal resist layer over a layer to be patterned that is formed over a substrate; patterning the metal resist layer using a lithography process to form a patterned metal resist layer and expose portions of the layer to be patterned; selectively depositing a silicon containing layer over the patterned resist layer by exposing the substrate to a gas mixture comprising a silicon precursor, the silicon containing layer being preferentially deposited over a top surface of the metal resist layer; and performing a surface cleaning process by exposing the layer to be patterned and the patterned metal resist layer covered with the silicon containing layer to a plasma process with an etch chemistry comprising a halogen or hydrogen.

Embodiments of three-dimensional (3D) memory devices and methods for controlling a photoresist (PR) trimming rate in the formation of the 3D memory devices are disclosed. In an example, a method includes forming a dielectric stack over a substrate, measuring a first distance between the first trimming mark and the PR layer along a first direction, and trimming the PR layer along the first direction. The method also includes etching the dielectric stack using the trimmed PR layer as an etch mask to form a staircase, forming a second trimming mark using the first trimming mark as an etch mask, measuring a second distance between the second trimming mark and the trimmed PR layer, comparing the first distance with the second distance to determine a difference between an actual PR trimming rate and an estimated PR trimming rate, and adjusting PR trimming parameters based on the difference.

A conductive composition including a conductive polymer (A), a water-soluble polymer (B) other than the conductive polymer (A), and a solvent (C), wherein a peak area ratio is 0.44 or less, which is determined based on results of analysis performed using a high performance liquid chromatograph mass spectrometer with respect to a test solution obtained by extracting the water-soluble polymer (B) from the conductive composition with n-butanol, and calculated by formula (I):

Area ratio=Y/(X+Y)

wherein X is a total peak area of an extracted ion chromatogram prepared with respect to ions derived from compounds having a molecular weight (M) of 600 or more from a total ion current chromatogram, Y is a total peak area of an extracted ion chromatogram prepared with respect to ions derived from compounds having a molecular weight (M) of less than 600 from the total ion current chromatogram.

This disclosure relates to a cleaning composition that contains 1) hydroxylamine; 2) a chelating agent; 3) an alkylene glycol; and 4) water. This disclosure also relates to a method of using the above composition for cleaning a semiconductor substrate.

A method for forming features over a wafer with a carbon based deposition is provided. The carbon based deposition is pretuned, wherein the pretuning causes a non-uniform removal of some of the carbon based deposition. An oxide deposition is deposited through an atomic layer deposition process, wherein the depositing the oxide deposition causes a non-uniform removal of some of the carbon based deposition. At least one additional process is provided, wherein the at least one additional process completes formation of features over the wafer, wherein the features are more uniform than features that would be formed without pretuning.

In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.

A lithography apparatus includes a wafer chuck configured to hold a wafer, a fluid source configured to contain a fluid to be applied towards the wafer during a lithography process, a dispensing nozzle positioned above the wafer chuck and in fluid communication with the fluid source, the dispensing nozzle having an adjustable cross-section, and a mechanical mechanism operable to apply a force towards an outer surface of the dispensing nozzle to change the adjustable cross-section.

A composition contains an organic solvent and compound (formula (1)), theoretical molecular weight 999 or less. (Z1 contains a nitrogen-containing heterocyclic ring; U represents a monovalent organic group (formula (2)); and p represents 2 to 4.) (In formula (2), R1 represents an alkylene group having 1 to 4 carbon atoms; A1 to A3 represent a hydrogen atom, or methyl or ethyl group: X represents —COO—, —OCO—, —O—, —S— or —NRa-; Ra represents a hydrogen atom or methyl group; Y represents a direct bond or optionally substituted alkylene group having 1 to 4 carbon atoms; R2, R3 and R4 represent a hydrogen atom or optionally substituted alkyl group having 1 to 10 carbon atoms or aryl group having 6 to 40 carbon atoms; R5 represents a hydrogen atom or hydroxy group; n represents 0 or 1; m1 and m2 represent 0 or 1; and * represents a binding site to Z1.)

A display panel manufacturing method includes the following steps: providing a first signal pad on a first face of a substrate; providing a second signal pad on a second face of the substrate; providing a conductive member that contacts each of the first signal pad, the second signal pad, and a third face of the substrate; providing a photoresist pattern that partially covers the conductive member and overlaps each of the first signal pad, the second signal pad, and the third face of the substrate; pre-curing the photoresist member; forming a signal line by etching the conductive member; and curing the photoresist member to form a cured photoresist member. The cured photoresist member covers an edge of the signal line.