A method for manufacturing a semiconductor structure includes: providing a base; forming multiple discrete first mask layers on the base; forming multiple sidewall layers, in which each sidewall layer is configured to encircle one of the first mask layers, and each sidewall layer is connected to closest sidewall layers, the side walls, away from the first mask layers, of multiple connected sidewall layers define initial first vias and each of the initial first vias is provided with chamfers; removing the first mask layers, and each sidewall layer defines a second via; after removing the first mask layers, forming repair layers which are located on the side walls, away from the second vias, of the sidewall layers and fill the chamfers of the initial first vias to form first vias; and etching the base along the first vias and the second vias to form capacitor holes on the base.

Embodiments described herein provide techniques for using a stress absorption material to improve solder joint reliability in semiconductor packages and packaged systems. One technique produces a semiconductor package that includes a die on a substrate, where the die has a first surface, a second surface opposite the first surface, and a sidewall surface coupling the first surface to the second surface. The semiconductor package further includes a stress absorption material contacting the sidewall surface of the die and a molding compound separated from the sidewall surface of the die by the stress absorption material. The Young's modulus of the stress absorption material is lower than the Young's modulus of the molding compound. One example of a stress absorption material is a photoresist.

Provided is a kit including a curable composition for imprinting, and a composition for forming an underlayer film for imprinting, in which the composition for forming an underlayer film for imprinting contains a polymer having a polymerizable functional group, and a compound in which the lower one of a boiling point and a thermal decomposition temperature is 480° C. or higher and ΔHSP, which is a Hansen solubility parameter distance from a component with the highest content contained in the curable composition for imprinting, is 2.5 or less. Furthermore, the present invention relates to a composition for forming an underlayer film for imprinting, a pattern forming method, and a method for manufacturing a semiconductor device, which are related to the kit.

A semiconductor reaction chamber includes a chamber body, a dielectric window, a gas inlet member, a carrier, an upper radio frequency assembly, and a plurality of ultraviolet light generation devices. The dielectric window is arranged at a top of the chamber body. The gas inlet member is arranged at a center position of the dielectric window and configured to introduce a process gas into the chamber body. The carrier is arranged inside the chamber body and configured to carry a to-be-processed wafer. The upper radio frequency assembly is arranged above the chamber body and configured to ionize the process gas introduced into the chamber body to generate a plasma and first ultraviolet light. The plurality of ultraviolet light generation devices is arranged between the dielectric window and the carrier and around the gas inlet member and configured to generate second ultraviolet light radiating toward the carrier.

The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

A semiconductor structure is provided. The semiconductor structure includes a base substrate including a plurality of non-device regions; a middle fin structure and an edge fin disposed around the middle fin structure on the base substrate between adjacent non-device regions; a first barrier layer on sidewalls of the edge fin; and an isolation layer on the base substrate. The isolation layer has a top surface lower than the edge fin and the middle fin structure, and covers a portion of the sidewalls of each of the edge fin and the middle fin structure. The isolation layer further has a material density smaller than the first barrier layer.

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

The inventive concept provides an apparatus and method for removing a film formed on a substrate. A method for treating the substrate includes a primary solvent dispensing step of dispensing an organic solvent onto the substrate to remove a photoresist film on the substrate and an ozone dispensing step of dispensing a liquid containing ozone onto the substrate to remove organic residue on the substrate, after the primary solvent dispensing step.

A multi-spray RRC process with dynamic control to improve final yield and further reduce resist cost is disclosed. In one embodiment, a method, includes: dispensing a first layer of solvent on a semiconductor substrate while spinning at a first speed for a first time period; dispensing the solvent on the semiconductor substrate while spinning at a second speed for a second time period so as to transform the first layer to a second layer of the solvent; dispensing the solvent on the semiconductor substrate While spinning at a third speed for a third time period so as to transform the second layer to a third layer of the solvent; dispensing the solvent on the semiconductor substrate while spinning at a fourth speed for a fourth time period so as to transform the third layer to a fourth layer of the solvent; and dispensing a first layer of photoresist on the fourth layer of the solvent while spinning at a fifth speed for a fifth period of time.

A method for preparing a semiconductor device structure includes forming a target layer over a semiconductor substrate, and forming a first energy-sensitive pattern over the target layer. The method also includes forming a lining layer covering the first energy-sensitive pattern, and forming a second energy-sensitive pattern over the lining layer. The first energy-sensitive pattern and the second energy-sensitive pattern are staggered. The method further includes performing an etching process to form a first opening and a second opening in the target layer. The first opening and the second opening have different depths.