An imprint method includes bringing a mold and an uncured imprint material supplied onto a substrate into contact with each other, enhancing viscoelasticity of the imprint material, making position adjustment of the mold and the substrate, and curing the imprint material. The imprint material is supplied onto a shot region of the substrate, and time between bringing the mold brought into contact with the imprint material and starting enhancing viscoelasticity is shorter when the shot region includes an outer periphery of the substrate than when the shot region does not include the outer periphery of the substrate.

A method includes simultaneously forming a first dummy gate stack and a second dummy gate stack on a first portion and a second portion of a protruding fin, simultaneously removing a first gate electrode of the first dummy gate stack and a second gate electrode of the second dummy gate stack to form a first trench and a second trench, respectively, forming an etching mask, wherein the etching mask fills the first trench and the second trench, patterning the etching mask to remove the etching mask from the first trench, removing a first dummy gate dielectric of the first dummy gate stack, with the etching mask protecting a second dummy gate dielectric of the second dummy gate stack from being removed, and forming a first replacement gate stack and a second replacement gate stack in the first trench and the second trench, respectively.

A film formation device for forming a film of a composition on the substrate by irradiating the composition on the substrate with light, includes an optical modulation unit for forming a distribution of an integrated light amount of the light on the substrate, and a control unit for controlling the optical modulation unit, in which the control unit controls the distribution of the integrated light amount of the optical modulation unit on the basis of residual film ratio characteristics of the composition and at least one of a curved shape of an imaging plane of an original template used in a subsequent process and a surface shape of a base film formed on the substrate.

A method for fabricating a semiconductor device includes forming a first mask layer on a substrate, forming an under layer on the first mask layer, forming a first photoresist pattern that includes tin on the under layer, converting at least a part of the first photoresist pattern into a second photoresist pattern including tin fluoride, through a plasma treatment process using fluorine element, etching the under layer using the second photoresist pattern as a first mask to form an under pattern, etching the first mask layer to form a first mask pattern, and etching at least a part of the substrate, using a mask pattern including the first mask pattern as a second mask.

A technique for suppressing a metal component from remaining at a bottom of a mask pattern when the mask pattern is formed using a metal-containing resist film. A developable anti reflection film 103 is previously formed below a resist film 104. Further, after exposing and developing the wafer W, TMAH is supplied to the wafer W to remove a surface of the antireflection film 103 facing a bottom of the recess pattern 110 of the resist film 104. Therefore, the metal component 105 can be suppressed from remaining at the bottom of the recess pattern 110. Therefore, when the SiO.sub.2 film 102 is subsequently etched using the pattern of the resist film 104, the etching is not hindered, so that defects such as bridges can be suppressed.

Provided are a substrate processing apparatus and a substrate processing method capable of achieving uniform trimming throughout an entire surface of a substrate. The substrate processing apparatus includes a gas channel including a center gas inlet and an additional gas inlet spaced apart from the center gas inlet, and a shower plate including a plurality of holes connected to the center gas inlet and the additional gas inlet, wherein a gas flow channel is formed having a clearance defined by a lower surface of the gas channel and an upper surface of the shower plate, the lower surface and the upper surface being substantially parallel.

A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which an underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing an anisotropic deposition to selectively form a deposition layer on a top portion of the mask.

There are provided a lithography method capable of selecting best resist and a semiconductor device manufacturing method and exposure equipment based on the lithography method. The lithography method includes estimating a shape of a virtual resist pattern based on a multi-scale simulation for resist, forming a test resist pattern by performing exposure on selected resist based on the simulation result, comparing the test resist pattern with the virtual resist pattern, and forming a resist pattern on an object to be patterned by using the resist when an error between the test resist pattern and the virtual resist pattern is in an allowable range.

A method for processing a substrate in a plasma chamber is provided. The method includes providing a substrate on which as underlying layer to be etched and a mask are formed. The method further includes forming a protective film on the mask. The method further includes performing as anisotropic deposition to selectively form a deposition layer on a top portion of the mask.

A method of forming a semiconductor device includes forming a photoresist layer over a mask layer, patterning the photoresist layer, and forming an oxide layer on exposed surfaces of the patterned photoresist layer. The mask layer is patterned using the patterned photoresist layer as a mask. A target layer is patterned using the patterned mask layer as a mask.