A semiconductor device has a first substrate made of a first semiconductor material, such as silicon. A sacrificial layer is formed over a first surface of the first substrate. A seed layer is formed over the sacrificial layer. A compliant layer is formed over a second surface of the first substrate opposite the first surface of the first substrate. A first semiconductor layer made of a second semiconductor material, such as silicon carbide, dissimilar from the first semiconductor material is formed over the sacrificial layer. The first substrate and sacrificial layer are removed leaving the first semiconductor layer substantially defect-free. The first semiconductor layer containing the second semiconductor material is formed at a temperature greater than a melting point of the first semiconductor material. A second semiconductor layer is formed over the first semiconductor layer with an electrical component formed in the second semiconductor layer.

A substrate bonding apparatus includes a substrate susceptor to support a first substrate, a substrate holder over the substrate susceptor to hold a second substrate, the substrate holder including a plurality of independently moveable holding fingers, and a chamber housing to accommodate the substrate susceptor and the substrate holder.

In some embodiments, the present disclosure relates to a method that includes aligned a first wafer with a second wafer. The second wafer is spaced apart from the first wafer. The first wafer is arranged on a first electrostatic chuck (ESC). The first ESC has electrostatic contacts that are configured to attract the first wafer to the first ESC. Further, the second wafer is brought toward the first wafer to directly contact the first wafer at an inter-wafer interface. The inter-wafer interface is localized to a center of the first wafer. The second wafer is deformed to gradually expand the inter-wafer interface from the center of the first wafer toward an edge of the first wafer. The electrostatic contacts of the first ESC are turned OFF such that the first and second wafers are bonded to one another by the inter-wafer interface.

It is an object of the present disclosure to provide a method of manufacturing a thin semiconductor element having a low defect rate. A method of manufacturing a semiconductor element according to the present disclosure includes: forming a metal thin film on an electrode protection layer of a circuit element substrate and a support substrate in vacuum; attaching the metal thin film of the circuit element substrate and the metal thin film of the support substrate by an atomic diffusion joining method; removing a semiconductor substrate by polishing to expose a circuit element; joining a transfer substrate to an exposed surface of the circuit element; and detaching the support substrate from the circuit element after joining the transfer substrate.

A method for activating an exposed layer of a structure including a provision of a structure including an exposed layer, a deposition of a layer based on a material of formula Si.sub.aY.sub.bX.sub.c, with X chosen from among fluorine F and chlorine Cl, and Y chosen from among oxygen O and nitrogen N, a, b and c being non-zero positive integers, a treatment of the layer Si.sub.aY.sub.bX.sub.c by an activation plasma based on at least one from among oxygen and nitrogen, the parameters of the deposition of the layer Si.sub.aY.sub.bX.sub.c being chosen so as to obtain a sufficiently low material density such that the layer Si.sub.aY.sub.bX.sub.c is at least partially consumed by the activation plasma.

There is provided a method for manufacturing an electronic device including a substrate of semiconductor material, an intermediate portion, and a silicon carbide layer, the method including transferring the silicon carbide layer from a first electronic element onto a face of a second electronic element including the substrate, the transfer including: providing the first element including a primary silicon carbide-based layer, a first diffusion barrier portion, and a first metal layer; providing the second element including the substrate, a second diffusion barrier portion, and a second metal layer; and bonding an exposed face of each of the first and the second metal layers, the first and the second metal layers being formed of tungsten, the first and the second portions being formed of at least one tungsten silicide layer, and the second portion, the second metal layer, the first metal layer, and the first portion form the intermediate portion.

This method includes the following steps: a) providing a first structure successively including a substrate, an electronic device and a dielectric layer; b) providing a second structure successively including a substrate, an active layer, an intermediate layer, a first semiconducting layer and a porous second semiconducting layer; c) bonding the first and second structures by direct bonding between the dielectric layer and the porous second semiconducting layer; d) removing the substrate of the second structure so as to expose the active layer; e) adding dopants to the first semiconducting layer or to the active layer; f) irradiating the first semiconducting layer by a pulse laser so as to thermally activate the corresponding dopants.

Semiconductor devices including a subfin including a first III-V compound semiconductor and a channel including a second III-V compound semiconductor are described. In some embodiments the semiconductor devices include a substrate including a trench defined by at least two trench sidewalls, wherein the first III-V compound semiconductor is deposited on the substrate within the trench and the second III-V compound semiconductor is epitaxially grown on the first III-V compound semiconductor. In some embodiments, a conduction band offset between the first III-V compound semiconductor and the second III-V compound semiconductor is greater than or equal to about 0.3 electron volts. Methods of making such semiconductor devices and computing devices including such semiconductor devices are also described.

A method for preparing a self-supporting substrate includes: preparing a thin film base structure including a first substrate layer, a thin film layer and a second substrate layer stacked in sequence; removing the first substrate layer from the thin film layer; continuing to grow a material the same as that of the thin film layer on a side of the thin film layer far away from the second substrate layer to prepare a thick film layer; and removing the second substrate layer from the thick film layer and remaining the thick film layer. In the method, a thin film may be grown on a substrate that has a larger diameter, and a thinness of the thin film will not cause the thin film and/or the substrate to crack. Therefore, a thin film that has a large diameter may be obtained so as to obtain a large-sized self-supporting thick film substrate.

A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.