A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

A front surface element structure is formed on the front surface side of an n.sup.-type semiconductor substrate. Then defects are formed throughout an n.sup.-type semiconductor substrate to adjust a carrier lifetime. Hydrogen ions are ion-implanted from a rear surface side of the n.sup.-type semiconductor substrate, and a hydrogen implanted region having a hydrogen concentration higher than a hydrogen concentration of a bulk substrate is formed in the surface layer of a rear surface side of the n.sup.-type semiconductor substrate.

Provided is a Precision Voltage Reference (PVR). In one example, the PVR includes a resonator having an oscillation frequency, the resonator including a first proof-mass, a first forcer located adjacent a first side of the first proof-mass, and a second forcer located adjacent a second side of the first proof-mass. The PVR may include control circuitry configured to generate a reference voltage based on the oscillation frequency of the resonator, at least one converter configured to receive the reference voltage from the control circuitry, provide a first bias voltage to the first forcer based on the reference voltage, provide a second bias voltage to the second forcer based on the reference voltage, and periodically alter a polarity of the first and second bias voltages to drive the oscillation frequency to match a reference frequency, and an output configured to provide the reference voltage as a voltage reference signal.

Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

A method of controlling a scanning-type plasma processing apparatus using a phased array antenna, includes observing light emission of plasma generated inside a processing container through observation windows provided at multiple positions in the processing container, calculating an in-plane distribution of values representing characteristics of the plasma on a substrate, based on data on the observed light emission of the plasma, and correcting a scanning pattern and/or a plasma density distribution of the plasma based on the calculated in-plane distribution of the values representing the characteristics of the plasma on the substrate.

Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement comprises a first guard ring surrounding at least a portion of a device, and a first poly layer formed over the first guard ring.

A manufacturing method of a memory device are provided. The method includes following steps. A gate stacking structure is formed over a substrate. A first insulating layer, a second insulating layer and a mask material layer are sequentially formed over the substrate to cover the gate stacking structure. An ion implantation process is performed on the mask material layer to form a doped portion in the mask material layer. The doped portion caps on a top portion of the gate stacking structure. A first patterning process is performed on the mask material layer using the doped portion as a shadow mask to remove a bottom portion of the mask material layer extending along a surface of the substrate. A second patterning process is performed to remove the doped portion of the mask material layer and an exposed bottom portion of the second insulating layer surrounding the gate stacking structure.