A method of manufacturing a semiconductor device is provided. The method includes forming a carbon structure on a handle substrate at a first surface of the handle substrate. The method further includes attaching a first surface of a semiconductor substrate to the first surface of the handle substrate. The method further includes processing the semiconductor substrate and performing a separation process to separate the handle substrate from the semiconductor substrate. The separation process comprises modifying the carbon structure.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes an integrated circuit (IC) component, an insulating layer laterally encapsulating sidewalls of the IC component, a redistribution structure disposed on the insulating layer and the IC component, and a warpage control portion coupling to a back side of the IC component opposite to the redistribution structure. The redistribution structure is electrically connected to the IC component. The warpage control portion includes a substrate, a patterned dielectric layer disposed between the substrate and the IC component, and a metal pattern embedded in the patterned dielectric layer and electrically isolated from the IC component.

A method of manufacturing a semiconductor structure, comprising providing a substrate; forming a fin structure over the substrate; depositing an insulation material over the fin structure; performing a plurality of ion implantations in-situ with implantation energy increased or decreased stepwise; and removing at least a portion of the insulation material to expose a portion of the fin structure.

The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.

A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.

A manufacturing method for a semiconductor chip includes: preparing a GaN wafer; producing a processed wafer by forming an epitaxial film on a surface of the GaN wafer to have chip formation regions adjacent to a first surface of the processed wafer; forming a first surface-side element component of a semiconductor element in each chip formation region; forming a wafer transformation layer along a planar direction of the processed wafer by irradiating an inside of the processed wafer with a laser beam; dividing the processed wafer at the wafer transformation layer into a chip formation wafer and a recycle wafer; extracting a semiconductor chip from the chip formation wafer; and after the preparing the GaN wafer and before the dividing the processed wafer, irradiating an inside of the gallium nitride wafer or the processed wafer with a laser beam to form a mark by deposition of gallium.

An apparatus for treating a substrate is disclosed. The apparatus for treating the substrate includes a housing having a treatment space inside the housing, a plate to support the substrate inside the housing, a heating member provided inside the plate to heat the substrate and including a plurality of heating zones, a temperature measuring member to measure a temperature of the substrate with respect to each of the plurality of heating zones of the heating member, and a control unit to control a temperature for the heating member in a dynamic section of a temperature change graph measured in the temperature measuring member. The control unit performs temperature control with respect to each of the plurality of heating zones of the heating member to uniformize the thickness of the thin film on the substrate.

A power semiconductor device includes: a semiconductor body having a front side surface and a drift region having first conductivity type dopants; and an edge termination region that includes a part of the drift region and a first semiconductor region extending along the front side surface. The first semiconductor region includes dopants of both conductivity types and forms a continuous pn-junction with the drift region. An integrated vertical dopant concentration of the second conductivity type dopants is higher than an integrated vertical dopant concentration of the first conductivity type dopants within the first semiconductor region. A first dose profile representing a vertically integrated net dopant concentration of the both conductivity type dopants in the first doped semiconductor region has a smaller degree of waviness along a horizontal direction than a second dose profile representing a vertically integrated dopant concentration of the second conductivity type dopants in the same semiconductor region.

The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.

The present disclosure relates to semiconductor structures and, more particularly, to bulk wafer switch isolation structures and methods of manufacture. The structure includes: a bulk substrate material; an active region on the bulk substrate material; an inactive region adjacent to the active region; and an amorphous material covering the bulk substrate material in the inactive region, which is adjacent to the active region.