A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

A method includes forming a first high-k dielectric layer over a first semiconductor region, forming a second high-k dielectric layer over a second semiconductor region, forming a first metal layer comprising a first portion over the first high-k dielectric layer and a second portion over the second high-k dielectric layer, forming an etching mask over the second portion of the first metal layer, and etching the first portion of the first metal layer. The etching mask protects the second portion of the first metal layer. The etching mask is ashed using meta stable plasma. A second metal layer is then formed over the first high-k dielectric layer.

A simple method for removing foreign substances that are formed on a substrate during a semiconductor device production process and a composition for forming a coating film for foreign substance removal, said coating film being used in the above-described method. A composition for forming a coating film for foreign substance removal, said composition containing a polymer and a solvent and being capable of forming a coating film that dissolves in a developer liquid, wherein: the polymer is selected from among phenolic novolacs, polyhydroxystyrene derivatives and carboxylic acid-containing polymers; and the polymer is contained in an amount of 50% by mass or more relative to the total solid content in the composition.

In an embodiment, a device includes a substrate, a first semiconductor layer that extends from the substrate, and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer includes silicon and the second semiconductor layer includes silicon germanium, with edge portions of the second semiconductor layer having a first germanium concentration, a center portion of the second semiconductor layer having a second germanium concentration, and the second germanium concentration being less than the first germanium concentration. The device also includes a gate stack on the second semiconductor layer, lightly doped source/drain regions in the second semiconductor layer, and source and drain regions extending into the lightly doped source/drain regions.

A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.

An epitaxial wafer that includes a silicon wafer and an epitaxial layer on the silicon wafer. The silicon wafer contains hydrogen that has a concentration profile including a first peak and a second peak. A hydrogen peak concentration of the first peak and a hydrogen peak concentration of the second peak are each not less than 1×10.sup.17 atoms/cm.sup.3.

According to the present invention, a method for treating the surface of a semiconductor substrate can be provided, the method including bringing the semiconductor substrate into contact with a liquid composition to impart alcohol repellency to the semiconductor substrate, wherein the liquid composition is characterized by containing: 0.01 to 15% by mass of each of at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof; and water. ##STR00001##
(In formulae (1) to (6), R.sup.F is selected from the group consisting of compounds in each of which a hydrogen atom in an alkyl group having 2 to 10 carbon atoms is substituted by a fluorine atom; R.sup.1 is selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms and others; R.sup.HP is selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group; R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; R.sup.5, R.sup.6 and R.sup.7 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; X.sup.− is selected from the group consisting of a hydroxide ion and others; and a represents an integer of 3 to 20 inclusive.)

According to the present invention, a method for treating the surface of a semiconductor substrate can be provided, the method including bringing the semiconductor substrate into contact with a liquid composition to impart alcohol repellency to the semiconductor substrate, wherein the liquid composition is characterized by containing: 0.01 to 15% by mass of each of at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof; and water. ##STR00001##
(In formulae (1) to (6), R.sup.F is selected from the group consisting of compounds in each of which a hydrogen atom in an alkyl group having 2 to 10 carbon atoms is substituted by a fluorine atom; R.sup.1 is selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms and others; R.sup.HP is selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group; R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; R.sup.5, R.sup.6 and R.sup.7 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; X.sup.− is selected from the group consisting of a hydroxide ion and others; and a represents an integer of 3 to 20 inclusive.)

A method of manufacturing a semiconductor device includes accommodating a substrate in a process chamber; supplying a first gas containing oxygen into the process chamber; generating plasma in the process chamber by exciting the first gas; supplying a second gas containing hydrogen into the process chamber and adjusting a hydrogen concentration distribution in the process chamber according to a density distribution of the plasma in the process chamber; and processing the substrate with oxidizing species generated by the plasma.

Micron scale tin oxide-based semiconductor devices are provided. Reactive-ion etching is used to produce a micron-scale electronic device using semiconductor films with tin oxides, such as barium stannate (BaSnO.sub.3). The electronic devices produced with this approach have high mobility, drain current, and on-off ratio without adversely affecting qualities of the tin oxide semiconductor, such as resistivity, electron or hole mobility, and surface roughness. In this manner, electronic devices, such as field-effect transistors (e.g., thin-film transistors (TFTs)), are produced having micron scale channel lengths and exhibiting complete depletion at room temperature.