Surface treatment method for imparting alcohol repellency to semiconductor substrate

Abstract

According to the present invention, a method for treating the surface of a semiconductor substrate can be provided, the method including bringing the semiconductor substrate into contact with a liquid composition to impart alcohol repellency to the semiconductor substrate, wherein the liquid composition is characterized by containing: 0.01 to 15% by mass of each of at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof; and water. ##STR00001##
(In formulae (1) to (6), R.sup.F is selected from the group consisting of compounds in each of which a hydrogen atom in an alkyl group having 2 to 10 carbon atoms is substituted by a fluorine atom; R.sup.1 is selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms and others; R.sup.HP is selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group; R.sup.2, R.sup.3 and R.sup.4 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; R.sup.5, R.sup.6 and R.sup.7 are independently selected from the group consisting of a hydrogen atom, an alkyl group having 1 to 6 carbon atoms and others; X.sup.− is selected from the group consisting of a hydroxide ion and others; and a represents an integer of 3 to 20 inclusive.)

Claims

1. A surface treatment method for a semiconductor substrate, which comprises bringing the semiconductor substrate into contact with a liquid composition to impart alcohol repellency to the semiconductor substrate, wherein the liquid composition comprises: 0.01 to 15% by mass of each of at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof; and water: ##STR00004## wherein: R.sup.F is selected from the group consisting of substituents obtained by substituting a hydrogen atom with a fluorine atom in an alkyl group having 2 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an aryl group or an alkylether group having 2 to 10 carbon atoms; R.sup.1 is selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms, an alkenylene group having 1 to 6 carbon atoms, an alkynylene group having 1 to 6 carbon atoms, an arylene group, an alkylene ether group having 1 to 6 carbon atoms, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group or an amino group; R.sup.HP is selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group; R.sup.2, R.sup.3 and R.sup.4 are a hydrogen atom or selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, an alkynyl group having 1 to 6 carbon atoms, an aryl group, an alkylether group having 1 to 6 carbon atoms, R.sup.FR.sup.1, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group, NR.sup.5R.sup.6, N.sup.+O.sup.−R.sup.5R.sup.6 or N.sup.+R.sup.5R.sup.6R.sup.7X.sup.−; R.sup.5, R.sup.6 and R.sup.7 are a hydrogen atom or selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, an alkynyl group having 1 to 6 carbon atoms, an aryl group, an alkylether group having 1 to 6 carbon atoms, R.sup.FR.sup.1, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group or an amino group; X.sup.− is selected from the group consisting of a hydroxide ion, a fluoride ion, a chloride ion, a bromide ion, a iodide ion, a nitrate ion, a phosphate ion, a sulfate ion, a hydrogen sulfate ion, a methanesulfate ion, a perchlorate ion, an acetate ion, a fluoroborate ion and a trifluoroacetate ion; and a represents an integer of 3 to 20.

2. The surface treatment method for the semiconductor substrate according to claim 1, wherein the surfactants do not contain any perfluoroalkyl group having 8 or more carbon atoms.

3. The surface treatment method for the semiconductor substrate according to claim 1, wherein the surfactants comprise a compound which contains nitrogen in a hydrophilic group thereof.

4. The surface treatment method for the semiconductor substrate according to claim 1, wherein said alcohol repellency is isopropyl alcohol repellency.

5. The surface treatment method for the semiconductor substrate according to claim 1, wherein the semiconductor substrate contains at least one material selected from the group consisting of silicon, aluminum, aluminum copper alloy, tantalum, nickel, tungsten, cobalt, molybdenum, titanium, zirconium, ruthenium, hafnium, platinum, silicon germanium, germanium, and an oxide, a nitride and a carbide thereof.

6. The surface treatment method for the semiconductor substrate according to claim 1, wherein the liquid composition further comprises an organic solvent.

7. The surface treatment method for the semiconductor substrate according to claim 6, wherein the organic solvent is at least one selected from the group consisting of isopropyl alcohol, acetone and DMF.

8. The surface treatment method for the semiconductor substrate according to claim 1, wherein the liquid composition further comprises an acid or an alkali as an additive.

9. The surface treatment method for the semiconductor substrate according to claim 8, wherein the additive is sulfuric acid.

Description

EMBODIMENTS FOR CARRYING OUT THE INVENTION

(1) The liquid composition to be used in the surface treatment method of the present invention contains a specific surfactant and water. Hereinafter, these matters will be described in detail.

Surfactant

(2) The surfactant to be used in the present invention includes at least two compounds selected from the group consisting of compounds respectively represented by formulae (1) to (6) below and salts thereof.

(3) ##STR00003##
(In formulae (1) to (6):

(4) R.sup.F is selected from the group consisting of substituents obtained by substituting a hydrogen atom with a fluorine atom in an alkyl group having 2 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkynyl group having 2 to 10 carbon atoms, an aryl group or an alkylether group having 2 to 10 carbon atoms;

(5) R.sup.1 is selected from the group consisting of a covalent bond, an alkylene group having 1 to 6 carbon atoms, an alkenylene group having 1 to 6 carbon atoms, an alkynylene group having 1 to 6 carbon atoms, an arylene group, an alkylene ether group having 1 to 6 carbon atoms, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group or an amino group;

(6) R.sup.HP is selected from the group consisting of a hydroxyl group, a sulfonic acid group and a carboxyl group;

(7) R.sup.2, R.sup.3 and R.sup.4 are a hydrogen atom or selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, an alkynyl group having 1 to 6 carbon atoms, an aryl group, an alkylether group having 1 to 6 carbon atoms, R.sup.FR.sup.1, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group, NR.sup.5R.sup.6, N.sup.+O.sup.−R.sup.5R.sup.6 or N.sup.+R.sup.5R.sup.6R.sup.7X.sup.−;

(8) R.sup.5, R.sup.6 and R.sup.7 are a hydrogen atom or selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 1 to 6 carbon atoms, an alkynyl group having 1 to 6 carbon atoms, an aryl group, an alkylether group having 1 to 6 carbon atoms, R.sup.FR.sup.1, and a substituent obtained by substituting a hydrogen atom in any of said groups with a hydroxyl group, a carboxyl group or an amino group;

(9) X.sup.− is selected from the group consisting of a hydroxide ion, a fluoride ion, a chloride ion, a bromide ion, a iodide ion, a nitrate ion, a phosphate ion, a sulfate ion, a hydrogen sulfate ion, a methanesulfate ion, a perchlorate ion, an acetate ion, a fluoroborate ion and a trifluoroacetate ion; and

(10) a represents an integer of 3 to 20.)

(11) Specific examples of the surfactant to be used in the present invention include C.sub.9F.sub.21OH, C.sub.8F.sub.19OH, C.sub.7F.sub.17OH, C.sub.6F.sub.15OH, C.sub.5F.sub.13OH, C.sub.4F.sub.11OH, C.sub.3F.sub.9OH, C.sub.2F.sub.7OH, C.sub.9F.sub.21SO.sub.3H, C.sub.8F.sub.19SO.sub.3H, C.sub.7F.sub.17SO.sub.3H, C.sub.6F.sub.15SO.sub.3H, C.sub.5F.sub.13SO.sub.3H, C.sub.4F.sub.11SO.sub.3H, C.sub.3F.sub.9SO.sub.3H, C.sub.2F.sub.7SO.sub.3H, C.sub.9F.sub.21COOH, C.sub.8F.sub.19COOH, C.sub.7F.sub.17COOH, C.sub.6F.sub.15COOH, C.sub.5F.sub.13COOH, C.sub.4F.sub.11COOH, C.sub.3F.sub.9COOH, C.sub.2F.sub.7COOH, C.sub.9F.sub.21CH.sub.2OH, C.sub.8F.sub.19CH.sub.2OH, C.sub.7F.sub.17CH.sub.2OH, C.sub.6F.sub.15CH.sub.2OH, C.sub.5F.sub.13CH.sub.2OH, C.sub.4F.sub.11CH.sub.2OH, C.sub.3F.sub.9CH.sub.2OH, C.sub.2F.sub.7CH.sub.2OH, C.sub.9F.sub.21OPO(OH).sub.2, C.sub.8F.sub.19OPO(OH).sub.2, C.sub.7F.sub.17OPO(OH).sub.2, C.sub.6F.sub.15OPO(OH).sub.2, C.sub.5F.sub.13OPO(OH).sub.2, C.sub.4F.sub.11OPO(OH).sub.2, C.sub.3F.sub.9OPO(OH).sub.2, C.sub.2F.sub.7OPO(OH).sub.2, C.sub.9F.sub.21NH.sub.2, C.sub.8F.sub.19NH.sub.2, C.sub.7F.sub.17NH.sub.2, C.sub.6F.sub.15NH.sub.2, C.sub.5F.sub.13NH.sub.2, C.sub.4F.sub.11NH.sub.2, C.sub.3F.sub.9NH.sub.2, C.sub.2F.sub.7NH.sub.2, C.sub.9F.sub.21CH.sub.2NH.sub.2, C.sub.8F.sub.19CH.sub.2NH.sub.2, C.sub.7F.sub.17CH.sub.2NH.sub.2, C.sub.6F.sub.15CH.sub.2NH.sub.2, C.sub.5F.sub.13CH.sub.2NH.sub.2, C.sub.4F.sub.11CH.sub.2NH.sub.2, C.sub.3F.sub.9CH.sub.2NH.sub.2, C.sub.2F.sub.7CH.sub.2NH.sub.2, [C.sub.6F.sub.15(CH.sub.2).sub.2OCH.sub.2CH(OH)CH.sub.2O].sub.2PO(OH), (C.sub.6F.sub.15CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2F.sup.−, (C.sub.6F.sub.15CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2Cl.sup.−, (C.sub.6F.sub.15CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2Br.sup.−, (C.sub.6F.sub.15CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2I.sup.−, C.sub.6F.sub.15CH.sub.2CH(OH)CH.sub.2NH(CH.sub.2).sub.3N.sup.+(CH.sub.2CH.sub.3).sub.2O.sup.− and C.sub.6F.sub.15C═C(CF.sub.3)(OCH.sub.2CH.sub.2).sub.aOCH.sub.3.

(12) Among them, a compound which does not contain any perfluoroalkyl group having 8 or more carbon atoms, and a compound which contains nitrogen in a hydrophilic group thereof are preferred.

(13) These compounds can suitably modify a substrate surface to allow to exert high IPA repellency.

(14) Further, among compounds represented by formula (1), CF.sub.3(CF.sub.2).sub.6CH.sub.2OH, (CF.sub.3).sub.2CH.sub.2OH, CF.sub.3(CF.sub.2).sub.7SO.sub.3H and CF.sub.3(CF.sub.2).sub.5COOH are preferred. Among compounds represented by formula (2), [CF.sub.3(CF.sub.2).sub.5(CH.sub.2).sub.2OCH.sub.2CH(OH)CH.sub.2O].sub.2PO(OH) is preferred. Among compounds represented by formula (3), CF.sub.3(CF.sub.2).sub.4CH.sub.2NH.sub.2 and (CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2I.sup.− are preferred. Among compounds represented by formula (4), CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2NH(CH.sub.2).sub.3N.sup.+(CH.sub.2CH.sub.3).sub.2O.sup.− is preferred. Among compounds represented by formula (5), CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2N.sup.+H(CH.sub.2COO.sup.−)(CH.sub.2).sub.3N(CH.sub.2CH.sub.3).sub.2 is preferred. Among compounds represented by formula (6), ((CF.sub.3).sub.2CF).sub.2C═C(CF.sub.3)(OCH.sub.2CH.sub.2).sub.aOCH.sub.3 is preferred.

(15) The content of each type of the surfactant contained in the liquid composition is 0.01 to 15% by mass, preferably 0.05 to 10% by mass, and more preferably 0.1 to 5% by mass. When the content is within the above-described range, homogeneity of the solution can be ensured while maintaining high IPA repellency. In the present invention, at least two compounds selected from surfactants respectively represented by formulae (1) to (6) and salts thereof are contained in the liquid composition. Therefore, when two types of surfactants are contained, the total content of the surfactants is 0.02 to 30% by mass, and when three types of surfactants are contained, the total content of the surfactants is 0.03 to 45% by mass.

Water

(16) The water to be used in the present invention is preferably water from which metal ions, organic impurities, particles, etc. have been removed by distillation, ion exchange treatment, filtering treatment, adsorption treatment or the like, and pure water and ultrapure water are particularly preferred.

(17) The content of the water in the liquid composition is 5 to 99.98% by mass, preferably 8 to 99.95% by mass, and particularly preferably 10 to 99.9% by mass.

Other Components

(18) Other than the above-described materials, an organic solvent may also be added to the liquid composition in the present invention in order to prevent phase separation and white turbidity. In addition, additives conventionally used in liquid compositions for semiconductors may also be blended within a range in which the effects of the present invention are not reduced. For example, an acid, an alkali, a chelating agent, a defoaming agent, etc. can be added.

Method for Preparing Liquid Composition

(19) In the present invention, the liquid composition can be prepared by homogeneously mixing the above-described surfactants, water, and according to need, the other components. The mixing method is not limited, and a general mixing method can be arbitrarily used.

Surface Treatment Method for Semiconductor Substrate

(20) By using the liquid composition of the present invention, an alcohol-repellent film can be formed on the semiconductor substrate. The alcohol to be targeted for alcohol repellency is not limited, and examples thereof include methanol, ethanol, 1-butanol, 1-propanol and IPA. Among them, IPA is preferred because the surface tension thereof is small and a clean product which can be used for washing semiconductors can be easily obtained.

(21) The semiconductor substrate to be targeted by the present invention is not limited, and specific examples thereof include silicon, aluminum, aluminum copper alloy, tantalum, nickel, tungsten, cobalt, molybdenum, titanium, zirconium, ruthenium, hafnium, platinum, silicon germanium, germanium, and an oxide, a nitride and a carbide thereof. The substrate may contain two or more of the above-described materials.

(22) The method for bringing the semiconductor substrate into contact with the liquid composition of the present invention is not particularly limited. For example, a method in which the semiconductor substrate is immersed in the liquid composition, or a method in which the semiconductor substrate is brought into contact with the liquid composition by means of dropping, spraying or the like can be employed.

(23) The temperature for use of the liquid composition of the present invention is usually 20 to 80° C., preferably 25 to 70° C., and can be suitably selected depending on the semiconductor substrate to be used.

(24) The time for contact with the liquid composition of the present invention is usually 0.3 to 20 minutes, preferably 0.5 to 10 minutes, and can be suitably selected depending on the semiconductor substrate to be used.

EXAMPLES

(25) Hereinafter, the present invention will be specifically described based on working examples, but embodiments can be suitably changed within a range in which the effects of the present invention are exerted.

Contact Angle Measurement Device

(26) The contact angle was measured using a contact angle meter DM701 manufactured by Kyowa Interface Science Co., Ltd.

Experiment Operation

(27) The experiment operation common to Examples and Comparative Examples is as described below.

(28) A wafer manufactured by Advantec in which a film of each material (5000 Å of silicon oxide, 3000 Å of silicon nitride, 1000 Å of aluminum oxide, 1000 Å of aluminum copper alloy, 1000 Å of tantalum, 5460 Å of nickel, 1000 Å of tantalum nitride, 3000 Å of tungsten oxide, 2200 Å of tungsten, 1000 Å of cobalt, 1000 Å of molybdenum or 2000 Å of titanium nitride) is formed on a Si substrate was treated with a predetermined liquid composition at a predetermined immersion temperature for a predetermined immersion time. After that, it was immersed in IPA to rinse an excess of the liquid composition. The remaining IPA on the surfaces was removed by blowing dry nitrogen gas. The contact angle between IPA and the substrate material after the surface treatment was measured, and the case where the contact angle was 30° or more was regarded as acceptable.

Examples 1-38

(29) The substrate materials were treated with the respective liquid compositions described in Table 2 under conditions described in Table 3. In all the cases, the contact angle with IPA was 30° or more and alcohol repellency was possessed.

Comparative Examples 1-10

(30) The substrate materials were treated with the respective liquid compositions 5A to 5J described in Table 5 under conditions described in Table 6. In all the cases, the contact angle with IPA was less than 30°. From the results, it was understood that a substrate material after immersed in a liquid composition containing only one type of a surfactant does not exert alcohol repellency.

Comparative Examples 11-13

(31) The substrate materials were treated with the respective liquid compositions 5K to 5M described in Table 5 under conditions described in Table 6. In all the cases, the contact angle with IPA was less than 30°. From the results, it was understood that a substrate material after immersed in a liquid composition in which one type of a surfactant does not contain any perfluoroalkyl group (not satisfying any of formulae (1) to (6)) does not exert alcohol repellency.

Comparative Examples 14-28

(32) The substrate materials were treated with the respective liquid compositions 7A, 7B, 7C and 7D described in Table 7 under conditions described in Table 8. In all the cases, the contact angle with IPA was less than 30°. The contact angle between water and the substrate material that was not immersed in the liquid composition was 4°. Since the contact angle between water and the substrate material after immersed in the liquid composition was 30° or more, it can be judged that the surface treatment using the liquid composition succeeded. From the results, it was understood that substrate materials after immersed in the silane-based compounds having an alkyl group described in Patent Documents 1, 2 and 3 (not satisfying any of formulae (1) to (6)) do not exert alcohol repellency.

Comparative Examples 29-36

(33) The experiment was carried out for comparison between the effects of the silane-based compound having a fluorine-containing alkyl group described in Patent Document 4 and the effects of the present invention. In the invention described in Patent Document 4, one or both of the silane-based compound having a fluorine-containing alkyl group and an acid catalyst were microencapsulated, the materials were mixed, and then the mixture was applied to the substrate surface while breaking microcapsules. By this operation, decomposition of the silane-based compound during the period between blending and applying can be prevented. Therefore, it was considered that even without microencapsulation, the effects of the invention described in Patent Document 4 can be reproduced by mixing the silane-based compound and the acid catalyst and rapidly treating the substrate material. Regarding the substrate materials after the surface treatment using the liquid composition of 7E in Table 7 (not containing two or more of the compounds represented by formulae (1) to (6)), the contact angle with IPA was less than 30°, and none of the substrate materials after the treatment had alcohol repellency.

(34) TABLE-US-00001 TABLE 1 Number of Name or structure of compound Type formula Specific number and structure 1A (1) CF.sub.3(CF.sub.2).sub.6CH.sub.2OH R.sup.F: alkyl group having 7 carbon atoms, R.sup.1: alkyl chain having a carbon atom, R.sup.HP: hydroxyl group 1B (1) (CF.sub.3).sub.2CH.sub.2OH R.sup.F: alkyl group having 2 carbon atoms, R.sup.1: alkyl chain having a carbon atom, R.sup.HP: hydroxyl group 1C (1) CF.sub.3(CF.sub.2).sub.7SO.sub.3H R.sup.F: alkyl group having 8 carbon atoms, R.sup.1: covalent bond, R.sup.HP: sulfonic acid group 1D (1) CF.sub.3(CF.sub.2).sub.5COOH R.sup.F: alkyl group having 6 carbon atoms, R.sup.1: covalent bond, R.sup.HP: carboxyl group 1E (2) [CF.sub.3(CF.sub.2).sub.5(CH.sub.2).sub.2OCH.sub.2CH(OH)CH.sub.2O].sub.2PO(OH) R.sup.F: alkyl group having 6 carbon atoms, R.sup.1: one hydrogen atom in alkylether chain having 5 carbon atoms is substituted with hydroxyl group, R.sup.2: R.sup.FR.sup.1 1F (3) CF.sub.3(CF.sub.2).sub.4CH.sub.2NH.sub.2 R.sup.F: alkyl group having 5 carbon atoms, R.sup.1: alkyl chain having a carbon atom, R.sup.2: hydrogen, R.sup.3: hydrogen 1G (3) (CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2).sub.2N(CH.sub.2).sub.3N.sup.+(CH.sub.3)(CH.sub.2CH.sub.3).sub.2I.sup.− R.sup.F: alkyl group having 6 carbon atoms, R.sup.1: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with hydroxyl group, R.sup.2: R.sup.FR.sup.1, R.sup.3: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with N.sup.+R.sup.5R.sup.6R.sup.7X.sup.−, R.sup.5: ethyl group, R.sup.6: ethyl group, R.sup.7: methyl group, X.sup.−: iodide ion 1H ( 4) CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2NH(CH.sub.2).sub.3N.sup.+(CH.sub.2CH.sub.3).sub.2O.sup.− R.sup.F: alkyl group having 6 carbon atoms, R.sup.1: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with hydroxyl group, R.sup.2: hydrogen, R.sup.3: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with N.sup.+O.sup.−R.sup.5R.sup.6, R.sup.5: ethyl group, R.sup.6: ethyl group 1I (5) CF.sub.3(CF.sub.2).sub.5CH.sub.2CH(OH)CH.sub.2N.sup.+H(CH.sub.2COO.sup.−)(CH.sub.2).sub.3N(CH.sub.2CH.sub.3).sub.2 R.sup.F: alkyl group having 6 carbon atoms, R.sup.1: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with hydroxyl group, R.sup.2: one hydrogen atom in alkyl group having a carbon atom is substituted with carboxyl group, R.sup.3: hydrogen, R.sup.4: one hydrogen atom in alkyl chain having 3 carbon atoms is substituted with NR.sup.5R.sup.6, R.sup.5: ethyl group, R.sup.6: ethyl group 1J (6) ((CF.sub.3).sub.2CF).sub.2C═C(CF.sub.3)(OCH.sub.2CH.sub.2).sub.aOCH.sub.3 R.sup.F: alkenyl group having 9 carbon atoms, R.sup.1: covalent bond, R.sup.2: alkyl group having a carbon atom

(35) TABLE-US-00002 TABLE 2 Surfactant Surfactant Organic solvent Water Liquid Concentration Concentration Concentration Additive Concentration Concentration composition Type % by mass Type % by mass Name % by mass Name % by mass % by mass 2A .sup. 1A 1 1E.sup.  1 IPA 40 58 2B .sup. 1A 1 1G 1.35 Sulfuric acid 0.1 97.55 2C .sup. 1A 1 1H 1.35 Sulfuric acid 0.1 97.55 2D 1B 1.35 1I.sup.  1 Sulfuric acid 0.1 97.55 2E 1C 1.35 1I.sup.  1 Sulfuric acid 0.1 97.55 2F .sup. 1D 1 1G 1.35 Sulfuric acid 0.1 97.55 2G 1E 1 1F.sup.  1 IPA 40 58 2H 1E 1 1G 1 IPA 40 58 2I 1E 5 1G 5 IPA 40 50 2J 1E 0.5 1G 0.5 IPA 40 59 2K 1E 0.05 1G 0.05 IPA 40 59.9 2L 1E 1 1G 0.1 IPA 40 58.9 2M 1E 0.1 1G 1 IPA 40 58.9 2N 1E 1 1H 1 IPA 40 58 2O 1E 1 1I.sup.  1 IPA 40 58 2P 1E 1 1I.sup.  1 Acetone 40 58 2Q 1E 1 1I.sup.  1 DMF 40 58 2R 1E 1 1G 1 IPA 40 58 2S 1F 1 1G 1.35 Sulfuric acid 0.1 97.55 2T .sup. 1G 1.35 1I.sup.  1.35 Sulfuric acid 0.02 97.28 2U 1J  0.5 1H 0.5 IPA 40 Sulfuric acid 0.03 58.97 2V 1J  0.5 1H 0.5 Sulfuric acid 0.1 98.9

(36) TABLE-US-00003 TABLE 3 Liquid Temperature/ Immersion time/ IPA contact angle/ Examples composition Substrate material ° C. min degree 1 2A Silicon oxide 25 2 30 2 2B Silicon oxide 25 2 41 3 2C Silicon oxide 25 2 38 4 2D Silicon oxide 25 2 31 5 2E Silicon oxide 25 2 30 6 2F Silicon oxide 25 2 37 7 2G Silicon oxide 25 2 32 8 2H Silicon oxide 25 0.25 40 9 2H Silicon oxide 25 1 43 10 2H Silicon oxide 25 2 45 11 2H Silicon oxide 25 10 44 12 2H Silicon oxide 25 30 40 13 2H Silicon oxide 25 60 45 14 2H Silicon oxide 60 2 46 15 2H Silicon oxide 80 2 48 16 2H Silicon nitride 25 2 44 17 2H Aluminum oxide 25 2 52 18 2H Aluminum copper alloy 25 2 57 19 2H Tantalum 25 10 38 20 2H Nickel 25 2 50 21 2H Tantalum nitride 25 2 44 22 2H Tungsten oxide 25 2 42 23 2H Tungsten 25 2 37 24 2H Cobalt 25 2 53 25 2H Molybdenum 25 2 39 26 2H Titanium nitride 25 2 53 27 2I Silicon oxide 25 2 44 28 2J Silicon oxide 25 2 41 29 2K Silicon oxide 25 2 38 30 2L Silicon oxide 25 2 40 31 2M Silicon oxide 25 2 41 30 2N Silicon oxide 25 2 43 31 2O Silicon oxide 25 2 50 32 2P Silicon oxide 25 2 44 33 2Q Silicon oxide 25 2 41 34 2R Silicon nitride 25 2 45 35 2S Silicon oxide 25 2 32 36 2T Silicon oxide 25 2 35 37 2U Silicon oxide 25 2 34 38 2V Silicon oxide 25 2 42

(37) TABLE-US-00004 TABLE 4 Number of Name or structure of compound Type formula Specific number and structure 4A Similar to CH.sub.3(CH.sub.2).sub.5OH (1) Fluorine atom in R.sup.F is substituted with hydrogen atom 4B Similar to [CH.sub.3(CH.sub.2).sub.11O].sub.2PO(OH) (2) Fluorine atom in R.sup.F is substituted with hydrogen atom 4C Similar to CH.sub.3(CH.sub.2).sub.5NH.sub.2 (3) Fluorine atom in R.sup.F is substituted with hydrogen atom

(38) TABLE-US-00005 TABLE 5 Surfactant Surfactant Additive Water Liquid Concentration Concentration Concentration Concentration composition Type % by mass Type % by mass Name % by mass % by mass 5A 1A 1 IPA 40 59 5B 1B 1 99 5C 1C 1 99 5D 1D 1 99 5E 1E.sup.  1 IPA 40 59 5F 1F.sup.  1 IPA 40 59 5G 1G 1 IPA 40 59 5H 1H 1 IPA 40 59 5I 1I.sup.  1 IPA 40 59 5J 1J  1 IPA 40 59 5K 1E.sup.  1 4A 1 IPA 40 58 5L 1G 1 4B 1 IPA 40 58 5M 1E.sup.  1 4C 1 IPA 40 58

(39) TABLE-US-00006 TABLE 6 Comparative Liquid Temperature/ Immersion time/ IPA contact angle/ Examples composition Substrate material ° C. min degree 1 5A Silicon oxide 25 10 15 2 5B Silicon oxide 25 10 <10 3 5C Silicon oxide 25 10 <10 4 5D Silicon oxide 25 10 <10 5 5E Silicon oxide 25 10 15 6 5F Silicon oxide 25 10 <10 7 5G Silicon oxide 25 10 15 8 5H Silicon oxide 25 10 21 9 5I Silicon oxide 25 10 20 10 5J Silicon oxide 25 10 <10 11 5K Silicon oxide 25 10 13 12 5L Silicon oxide 25 10 12 13 5M Silicon oxide 25 10 11

(40) TABLE-US-00007 TABLE 7 Liquid composition Compound and concentration thereof (% by mass) 7A Hexamethyldisilazane: 1%, Toluene: 99% 7B Octyldimethylsilyldimethylamine: 1%, Toluene: 99% 7C Trimethylsilyldimethylamine: 1%, Toluene: 99% 7D Tetramethylsilane: 1%, Toluene: 99% 7E Perfluorodecyltrimethoxysilane: 1%, Sulfuric acid: 3%, Water: 96%

(41) TABLE-US-00008 TABLE 8 Comparative Liquid Substrate Temperature/ Immersion time/ Water contact IPA contact Examples composition material ° C. min angle/degree angle/degree 14 7A Silicon oxide 60 2 42 <10 15 7A Silicon oxide 60 10 53 <10 16 7B Silicon oxide 25 2 89 <10 17 7B Silicon oxide 25 10 99 <10 18 7B Silicon oxide 60 2 101 <10 19 7B Silicon oxide 60 10 104 <10 20 7B Silicon nitride 25 2 83 <10 21 7B Silicon nitride 25 10 82 <10 22 7B Silicon nitride 60 2 93 <10 23 7B Silicon nitride 60 10 90 <10 24 7C Silicon oxide 25 2 68 <10 25 7C Silicon oxide 25 10 83 <10 26 7C Silicon oxide 60 2 77 <10 27 7C Silicon oxide 60 10 90 <10 28 7D Silicon oxide 60 10 34 <10 29 7E Silicon oxide 25 2 110 <10 30 7E Silicon oxide 25 10 109 21 31 7E Silicon oxide 60 2 110 <10 32 7E Silicon oxide 60 10 107 13 33 7E Silicon nitride 25 2 41 <10 34 7E Silicon nitride 25 10 90 <10 35 7E Silicon nitride 60 2 56 <10 36 7E Silicon nitride 60 10 92 <10

Comparative Examples 37-40

(42) Into an airtight container, 9.5% by mass of CH.sub.2═CH—COO—(CH.sub.2).sub.2—(CF.sub.2).sub.6—F, 40% by mass of CH.sub.2═C(CH.sub.3)—COO—(CH.sub.2).sub.2—(CF.sub.2).sub.6—F, 0.5% by mass of CH.sub.2═CH—COO—C.sub.2H.sub.4O—CO—C.sub.2H.sub.4—COOH, 0.17% by mass of dimethyl 2,2′-azobis(isobutyrate) and 49.83% by mass of m-xylenehexafluoride were fed, and the mixture was reacted at 70° C. for 18 hours to obtain a polymer 9A. 15% by mass of the polymer 9A was mixed with 85% by mass of m-xylenehexafluoride to obtain a liquid composition 9B (not containing two or more of the compounds represented by formulae (1) to (6)). After the substrate materials were subjected to the surface treatment using the liquid composition 9B under conditions shown in Table 9, the contact angle with IPA was less than 30°. From the results, it was understood that the surface treatment agent described in Patent Document 5 does not exert alcohol repellency.

(43) TABLE-US-00009 TABLE 9 Comparative Liquid Temperature/ Immersion time/ IPA contact angle/ Examples composition Substrate material ° C. min degree 37 9B Silicon oxide 25 2 <10 38 9B Silicon oxide 25 2 <10 39 9B Silicon oxide 60 10 <10 40 9B Silicon oxide 60 10 <10