A housing for at least one electronic device includes: a base part including a mounting area for the at least one electronic device; a lid made of glass, the lid made of glass having at least one window integrated therein that is made of a material transparent to infrared radiation; a first mounting area which is arranged under a portion of the lid made of glass; and a second mounting area arranged under the at least one window.

According to the various aspects, a multi-chip semiconductor package includes a package substrate, an interconnect frame extending beyond a first side edge of the package substrate, the interconnect frame including a bottom surface positioned over and coupled to a top surface of the package substrate, a first semiconductor device positioned at least partially over and coupled to the interconnect frame, and a second semiconductor device positioned on the bottom surface of the interconnect frame alongside of the package substrate. The interconnect frame further includes a redistribution layer and a frame construct layer, and a plurality of vias coupled to the redistribution layer, with the frame construct layer further includes a recessed area, and the first semiconductor device is positioned in the recessed area.

A method for forming semiconductor devices includes: attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices; forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure; and reducing a thickness of the wide band-gap semiconductor wafer after attaching the glass structure. Additional methods for forming semiconductor devices are described.

A method includes: bonding a plurality of interposer dies to a first redistribution layer (RDL), each of the interposer dies comprising a substrate and a second RDL below the substrate; encapsulating the first RDL and the interposer dies; reducing a thickness of the substrate of each of the interposer dies; and electrically coupling the interposer dies to a first semiconductor die.

A microelectronic device, in a multirow gull-wing chip scale package, has a die connected to intermediate pads by wire bonds. The intermediate pads are free of photolithographically-defined structures. An encapsulation material at least partially surrounds the die and the wire bonds, and contacts the intermediate pads. Inner gull-wing leads and outer gull-wing leads, located outside of the encapsulation material, are attached to the intermediate pads. The gull-wing leads have external attachment surfaces opposite from the intermediate pads. The external attachment surfaces of the outer gull-wing leads are located outside of the external attachment surfaces of the inner gull-wing leads. The microelectronic device is formed by mounting the die on a carrier, forming the intermediate pads without using a photolithographic process, and forming the wire bonds. The encapsulation material is formed, and the carrier is subsequently removed, exposing the intermediate pads. The gull-wing leads are formed on the intermediate pads.

A method for forming semiconductor devices includes attaching a glass structure to a wide band-gap semiconductor wafer having a plurality of semiconductor devices. The method further includes forming at least one pad structure electrically connected to at least one doping region of a semiconductor substrate of the wide band-gap semiconductor wafer, by forming electrically conductive material within at least one opening extending through the glass structure.

A semiconductor device includes at least one first semiconductor element having a first electrode, a second semiconductor element having a second electrode, a first lead terminal connected to the first electrode of the at least one first semiconductor element, a second lead terminal connected to the second electrode of the second semiconductor element, a first resin with which the first lead terminal and the second lead terminal are sealed, and a second resin with which the at least one first semiconductor element and the second semiconductor element are sealed.

A method for incorporating semiconductors on a diamond substrate. A buffer layer (e.g., GaN) is grown on a transition layer (e.g., AlN/AlGaN) residing on a substrate. A silicon nitride layer is then grown on the buffer layer. After selectively seeding diamond on the silicon nitride layer, the selective seeding of the diamond is dry etched to form regions with seeded diamond and regions without seeded diamond. The silicon nitride is selectively etched in the regions without seeded diamond and diamond is grown in the regions with seeded diamond forming regions of diamond. Additional Group III-nitride semiconductor material (e.g., GaN) is grown in the etched regions without seeded diamond to fill such regions to reach a level of the regions with diamond. An epitaxial overgrowth of the Group III semiconductor material at and above the level of the regions with diamond is then performed.

A component carrier having a base structure consisting of an electrically conductive material, an electronic component arranged on the base structure and a surrounding structure on the base structure, where the surrounding structure at least partially surrounds the electronic component laterally.

A semiconductor package includes a lower substrate including a central region and an edge region, an upper substrate on the central region of the lower substrate, a first semiconductor chip on the upper substrate, a second semiconductor chip on the upper substrate and horizontally spaced apart from the first semiconductor chip, a reinforcing structure on the edge region of the lower substrate, and a molding layer that covers an inner sidewall of the reinforcing structure, a top surface of the lower substrate, a sidewall of the first semiconductor chip, a sidewall of the second semiconductor chip, and the upper substrate. The molding layer is interposed between the lower substrate and the upper substrate, between the upper substrate and the first semiconductor chip, and between the upper substrate and the second semiconductor chip. The first semiconductor chip is of a different type from the second semiconductor chip.