A semiconductor device includes a substrate. A first heat dissipation layer is disposed on the substrate and extends in a first direction. A metal layer is disposed on the first heat dissipation layer and extends in the first direction. A width of the first heat dissipation layer in a second direction intersecting the first direction is greater than a width of the metal layer in the second direction. The first heat dissipation layer has a structure made of carbon atoms and includes at least one among graphene, nanotubes, and a diamond structure.

A cooler module has a cooling tube and a support member. The cooling tube has a first protruding tube portion and a second protruding tube portion. The first protruding tube portion is provided with a first flexible portion formed in an annular shape. The second protruding tube portion is provided with a second flexible portion formed in an annular shape. The support member has a first fitting portion fitted to the first protruding tube portion and a second fitting portion fitted to the second protruding tube portion. The support member supports a longitudinal center portion of the cooling tube on a condition that the first protruding tube portion and the first fitting portion are fitted together, the second protruding tube portion and the second fitting portion are fitted together, and the first flexible portion and the second flexible portion are recessed toward an inside of the cooling tube.

Embodiments are related to substrates having one or more well structures each exhibiting substantially vertical sidewalls and substantially planar bottoms.

Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including bonding a die to a top surface of a first substrate, the die being electrically coupled to the first substrate, and forming a support structure on the top surface of the first substrate, the support structure being physically separated from the die with a top surface of the support structure being coplanar with a top surface of the die. The method further includes performing a sawing process on the first substrate, the sawing process sawing through the support structure.

A packaged integrated circuit is provided. The packaged integrated circuit includes a die, a package including a base, a lid, and a plurality of package leads, and die attach adhesive for securing the die to the package base. the die includes a plurality of die pads. The die is secured to the base with the die attach adhesive. After the die is secured to the base, at least one of the plurality of die pads is electrically connected to at least one of the plurality of package leads with a printed bond connection. After printing the bond connection, the lid is sealed to the base.

A lid array panel includes multiple lids, where each lid includes an outer side wall. The lid array panel further includes a bridge section surrounding and attached to the outer side walls of the lids, where the lids are connected to each other by the bridge section, the lid array panel further includes a reinforcement attached to the bridge section. A package structure includes a carrier, a chip disposed on an upper surface of the carrier, a lid, a bridge section, and a reinforcement. The lid includes a top wall and an outer side wall, the top wall and the outer side wall of the lid together define a cavity, and the outer side wall of the lid is attached to the upper surface of the carrier. The bridge section surrounds, and is attached to, the outer side wall of the lid. The reinforcement is attached to the bridge section.

A component carrier for carrying electronic components, wherein the component carrier comprises an at least partially electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end, wherein the at least one electronic component is electrically contacted directly to the component contacting end, wherein at least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure, and wherein the wiring contacting end is electrically contacted directly to the wiring structure.

A semiconductor package includes a base substrate that includes a first surface and a second surface that face each other, a plurality of first metal line patterns disposed on the first surface, a plurality of second metal line patterns disposed on the second surface, a plurality of vias that penetrate the base substrate and connect the first metal line patterns to the second metal line patterns, a semiconductor chip disposed on the first surface, and a molding member that covers the first surface and the semiconductor chip. The base substrate includes at least one recess at a corner of the base substrate. The recess extends from the first surface toward the second surface. The molding member includes a protrusion that fills the recess.

A highly-reliable semiconductor device has improved adhesion between a sealing material and a sealed metal member and/or a case member. In some implementations, the semiconductor device includes: a laminated substrate on which a semiconductor element is mounted; and a sealing material. In some implementations, the sealing material contains an epoxy base resin, a curing agent, and a phosphonic acid.

Implementations of semiconductor packages may include: a die coupled to a glass lid; one or more inner walls having a first material coupled to the die; an outer wall having a second material coupled to the die; and a glass lid coupled to the die at the one or more inner walls and at the outer wall; wherein the outer wall may be located at the edge of the die and the glass lid and the one or more inner walls may be located within the perimeter of the outer wall at a predetermined distance from the perimeter of the outer wall; and wherein a modulus of the first material may be lower than a modulus of the second material.