A device for linearly moving bases with respect to an object, includes first and second bases, a linear scale provided with graduations at pitches in the moving direction, first and second encoder heads attached to the first and second bases, and a control unit. The control unit maintains an interval between the first and second encoder heads to be constant, and moves the first and second bases while sequentially detects a first and second graduation numbers, and calculates a distance on the scale between the first and second encoder heads by multiplying a difference between the first and second graduation numbers by the pitch, and calculates a position correction coefficient of the scale as a ratio of the interval with respect to the calculated distance, and controls the movement amount of the first movable body and the second movable body based on the position correction coefficient.

A device for linearly moving bases with respect to an object, includes first and second bases, a linear scale provided with graduations at pitches in the moving direction, first and second encoder heads attached to the first and second bases, and a control unit. The control unit maintains an interval between the first and second encoder heads to be constant, and moves the first and second bases while sequentially detects a first and second graduation numbers, and calculates a distance on the scale between the first and second encoder heads by multiplying a difference between the first and second graduation numbers by the pitch, and calculates a position correction coefficient of the scale as a ratio of the interval with respect to the calculated distance, and controls the movement amount of the first movable body and the second movable body based on the position correction coefficient.

This semiconductor device manufacturing device comprises: a stage; a bonding head; a copying mechanism provided on the bonding head; and a controller that executes the copying process to adjust a facing surface to be parallel to a reference plane by having the facing surface, which is a holding surface or a chip end face, follow the reference plane 110, which is a planar surface of the stage or a substrate. In the copying process, the controller moves the bonding head relative to the surface direction of the reference plane with the facing surface left abutting the reference plane in a state with the copying mechanism switched to a free state, until the axial direction position of the bonding head reaches a stipulated reference position, and when the axial direction position reaches the reference position, switches the copying mechanism to a locked state.

A semiconductor package includes an encapsulant body; a first electrically conductive element having an outwardly exposed metal surface; a first carrier substrate having a first electrically conductive layer, a second electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the first electrically conductive element and the first electrically conductive layer; a power semiconductor chip between the first electrically conductive element and the first electrically conductive layer; and a second electrically conductive spacer between the first electrically conductive element and the power semiconductor chip, a first carrier region of the first electrically conductive layer is connected to a first power terminal, a second carrier region of the first electrically conductive layer is alongside the first carrier region and is connected to a second power terminal, a first region of the first electrically conductive element is connected to a third power terminal.

A semiconductor package includes an encapsulant body; a first electrically conductive element having an outwardly exposed metal surface; a first carrier substrate having a first electrically conductive layer, a second electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer; a first electrically conductive spacer between the first electrically conductive element and the first electrically conductive layer; a power semiconductor chip between the first electrically conductive element and the first electrically conductive layer; and a second electrically conductive spacer between the first electrically conductive element and the power semiconductor chip, a first carrier region of the first electrically conductive layer is connected to a first power terminal, a second carrier region of the first electrically conductive layer is alongside the first carrier region and is connected to a second power terminal, a first region of the first electrically conductive element is connected to a third power terminal.

A semiconductor laser device includes a submount, a semiconductor laser element, and a bonding material. The semiconductor laser element includes a substrate and a layered structure, and is disposed with the layered structure facing the submount. A waveguide extending in a first direction parallel to the main surface of the substrate is formed in the layered structure. The bonding material includes an inner region bonded to the semiconductor laser element and one outer region located outward of the inner region. The one outer region is spaced apart from one side surface of the semiconductor laser element. Width A of the semiconductor laser element and width B of the one outer region in a second direction perpendicular to the first direction and parallel to the main surface of the substrate satisfy B≥A/4.

An adhesive composition containing an epoxy resin (A), an epoxy resin curing agent (B), a phenoxy resin (C), and an inorganic filler (D), in which the phenoxy resin (C) has an elastic modulus of 500 MPa or more at 25° C., a proportion of the phenoxy resin (C) in a total content of the epoxy resin (A) and the phenoxy resin (C) is 10 to 60 mass%, a nanoindentation hardness at 25° C. of a film-like adhesive before curing formed using the adhesive composition is 0.10 MPa or more, and the Young’s modulus at 25° C. of a film-like adhesive before curing formed using the adhesive composition is 100 MPa or more; a film-like adhesive using the adhesive composition; and a semiconductor package using the film-like adhesive and a producing method thereof.

Disclosed is a method for manufacturing a bonded body that includes a glass member, a bonding subject member, and a bonding portion bonded to the glass member and the bonding subject member. The method includes a setting step, a pressing step, and a bonding portion formation step. The setting step is a step of setting a jig main body lid on a jig main body in a state in which a stack is disposed in a recess of the jig main body. The pressing step is a step of adjusting an atmospheric pressure in the recess of the jig main body after the setting step to press the stack with the jig main body lid. The bonding portion formation step is a step of forming the bonding portion from a bonding material included in the stack in a state in which the stack is pressed in the pressing step.

This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO.sub.2 film, a Si.sub.3N.sub.4 film and a second SiO.sub.2 film stacked in this order, wherein the first SiO.sub.2 film is formed by a thermal oxidation process, the Si.sub.3N.sub.4 film is formed by a low pressure chemical vapor deposition process, and the second SiO.sub.2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.

This disclosure provides a package structure for a semiconductor device, comprising a three-layer film consisting of a first SiO.sub.2 film, a Si.sub.3N.sub.4 film and a second SiO.sub.2 film stacked in this order, wherein the first SiO.sub.2 film is formed by a thermal oxidation process, the Si.sub.3N.sub.4 film is formed by a low pressure chemical vapor deposition process, and the second SiO.sub.2 film is formed by a low temperature atomic layer deposition process. This disclosure also provides a method for preparing the package structure for a semiconductor device.