A second protective film is formed on and in contact with a first protective film, and is formed to cover the first protective film. The second protective film is also formed so that an end portion extending toward the center of a first opening is interposed between a wiring line and a bonding pad at the edge portion of the bonding pad.

A heat spreader can be used with a semiconductor component. The heat spreader includes: a body having a bottom surface to be in thermal contact with the semiconductor component, and a top surface opposite to the bottom surface; a plurality of holes disposed at a non-peripheral region of the body, wherein each hole passes through the body between the top surface and the bottom surface; and a plurality of extensions each being disposed within one of the plurality of holes and extending from the top surface and downward below the bottom surface, wherein the plurality of extensions are configured to hold the semiconductor component when the heat spreader is mounted with the semiconductor component.

A heat spreader can be used with a semiconductor component. The heat spreader includes: a body having a bottom surface to be in thermal contact with the semiconductor component, and a top surface opposite to the bottom surface; a plurality of holes disposed at a non-peripheral region of the body, wherein each hole passes through the body between the top surface and the bottom surface; and a plurality of extensions each being disposed within one of the plurality of holes and extending from the top surface and downward below the bottom surface, wherein the plurality of extensions are configured to hold the semiconductor component when the heat spreader is mounted with the semiconductor component.

A semiconductor device package and a method for manufacturing a semiconductor device package are provided. The semiconductor device package includes a carrier, a sensor module, a connector, and a stress buffer structure. The sensor module is disposed on the carrier. The connector is connected to the carrier. The stress buffer structure connects the connector to the sensor module.

A semiconductor chip (6) is bonded to a metal pattern (5) of an insulating substrate (2). A recess (12) and a groove (13) are formed on an upper surface of an electrode (7). The groove (13) reaches a side surface of the electrode (7) from the recess (12). First solder (15) is placed in the recess (12). Second solder (17) is provided between an upper surface of the metal pattern (5) and a lower surface of the electrode (7). The first solder (15) and the second solder (17) are melted. The melted first solder (15) are fused to the second solder (17) via the groove (13) to form a solder fillet (14) which bonds the upper surface of the metal pattern (5) to the lower surface of the electrode (7) and covers the upper surface of the electrode (7).

A semiconductor chip (6) is bonded to a metal pattern (5) of an insulating substrate (2). A recess (12) and a groove (13) are formed on an upper surface of an electrode (7). The groove (13) reaches a side surface of the electrode (7) from the recess (12). First solder (15) is placed in the recess (12). Second solder (17) is provided between an upper surface of the metal pattern (5) and a lower surface of the electrode (7). The first solder (15) and the second solder (17) are melted. The melted first solder (15) are fused to the second solder (17) via the groove (13) to form a solder fillet (14) which bonds the upper surface of the metal pattern (5) to the lower surface of the electrode (7) and covers the upper surface of the electrode (7).

A semiconductor device includes a semiconductor control element, a first drive element, a second drive element, a first insulating element and a second insulating element. In plan view, the first drive element and the second drive element are located on the opposite sides with respect to the semiconductor control element. The first insulating element is located between the semiconductor control element and the first drive element, relays a signal transmitted from the semiconductor control element to the first drive element, and provides electrical insulation between the semiconductor control element and the first drive element. The second insulating element is located between the semiconductor control element and the second drive element, relays a signal transmitted from the semiconductor control element to the second drive element, and provides electrical insulation between the semiconductor control element and the second drive element.

The present invention relates to an electrical device including a printed circuit board (PCB) accommodated in a case, and more particularly, to an air-pocket prevention PCB, an air-pocket prevention PCB module, an electrical device including the same, and a manufacturing method of an electrical device including the same with improved fluidity of a resin material so that air pockets that may occur when the case is filled with the resin material are easily discharged and the resin material may be evenly filled inside the case.

A flip-chip bonding structure includes a chip and a circuit board, the chip is bonded to the circuit board by bumps. The circuit board includes a light-transmissive substrate, a first circuit group, a second circuit group, a boundary circuit and an identifying member. The boundary circuit is located between the first and second circuit groups and projects a boundary circuit shadow on light-transmissive substrate. The boundary circuit shadow can be recognized according to the identifying member and is provided to identify the boundary between the first and second circuit groups or identify the position of leads with the smallest pitch.

A flip-chip bonding structure includes a chip and a circuit board, the chip is bonded to the circuit board by bumps. The circuit board includes a light-transmissive substrate, a first circuit group, a second circuit group, a boundary circuit and an identifying member. The boundary circuit is located between the first and second circuit groups and projects a boundary circuit shadow on light-transmissive substrate. The boundary circuit shadow can be recognized according to the identifying member and is provided to identify the boundary between the first and second circuit groups or identify the position of leads with the smallest pitch.