A solvent recycle system minimizes chemical consumption used in various semiconductor processes. The solvent is recycled from a nozzle bath via the addition of buffer tank to connect the bath and circulation pumps. Improvements to the bath design further maintain solvent cleanness by preventing intrusion of particles and overflow conditions in the bath.

A substrate processing method according to an embodiment includes a processing liquid supply step and an UV irradiation step. In the processing liquid supply step, a processing liquid is supplied to a substrate. In the UV irradiation step, the substrate after the processing liquid supply step is irradiated with ultraviolet rays having a wavelength of 200 nm or less, so that the substrate after the processing liquid supply step is destaticized.

A vaporizer includes a tank in which liquid material is heated to generate gas, a cabinet which houses the tank, and a conduit which supplies the gas to the outside of the cabinet. The vaporizer also includes a flow rate measuring means which measures a flow rate of the gas flowing through said conduit, and a heater plate which heats the conduit. The cabinet comprises a detachable panel that is a panel which can be removed. A first support member is fixed directly or indirectly to said cabinet at a position other than said detachable panel, the flow rate measuring means is supported by said first support member, and the heater plate is supported between said flow rate measuring means and said detachable panel by said first support member.

Systems and methods for semiconductor fabrication are described. A spin coater comprises a spin chuck, a nozzle, a nozzle housing, a purge gas supply, and an organic solvent supply. The nozzle housing includes a lower housing including a solvent storage groove in which the organic solvent is stored, and an upper housing on the lower housing. The upper housing includes a nozzle insert hole on the solvent storage groove and receives the nozzle, and a gas supply hole connected to one side of the nozzle insert hole.

A chamber apparatus comprises a lower and an upper chamber body, and a gasket member. The lower chamber body defines a receiving region and a first receiving groove. The upper chamber body disposed above the lower chamber body and defines a second receiving groove projectively align to the first receiving groove. The second receiving groove is configured to establish sealing coupling with the lower chamber body so as to form a chamber enclosure region. The gasket member includes a conductive member and an elastomeric member. The conductive member configured to laterally surround the receiving region and respectively fit into the lower chamber body and the upper chamber body. The elastomeric member is protruded from the conductive member and extended toward the receiving region, configured to be compressed by the upper and the lower chamber body so as to seal the chamber enclosure region.

The invention relates to a gas inlet valve for the controlled inlet of a process gas into a vacuum process chamber, wherein the gas inlet valve comprises: a gas flow unit with a gas inlet, a gas outlet and an inner volume which has free access to the gas inlet and to the gas outlet, wherein the gas flow unit has a sealing surface in the inner volume, an adjusting device with an adjusting unit, wherein the adjusting unit projects into the inner volume and is adjustably mounted outside the gas flow unit in the adjusting device, wherein the adjusting unit has a plate which is arranged inside the inner volume, wherein the plate can be brought into a closed position by means of the adjusting device, in which the plate rests on the sealing surface and thus prevents a gas flow, and wherein the plate can be brought by means of the adjusting device into an open position in which the plate is spaced from the sealing surface and thus allows a gas flow, two flexible sealing elements, which are fixed in each case to the gas flow unit and to the adjusting unit and thereby seal the inner volume, and a position determination unit which is arranged on or in the adjusting device and is adapted to determine a position of a part of the adjusting unit which has a fixed local relation to the plate.

A substrate processing method includes forming an adsorption layer on a substrate by supplying a silicon-containing gas to the substrate; performing a modification by generating plasma containing He; and generating plasma of a reaction gas to cause the plasma to react with the adsorption layer, wherein the forming the adsorption layer, the performing the modification, and the generating the plasma are repeated to form a silicon-containing film.

Proposed is a powder removing apparatus using a screw cylinder for a gas processing facility, in which the powder removing apparatus has a structure in which a scraper is coupled to the screw cylinder that allows a piston rod to be moved forward while being rotated in one direction and to be moved backward while being rotated in a reverse direction according to a supply direction of fluid, thereby allowing the powder adhered to an inner circumferential surface of a pipeline of the gas processing facility or an inner wall surface of the gas processing facility to be easily and efficiently removed. According to an embodiment of the present disclosure, the powder removing apparatus includes the screw cylinder and a scraper.

A gas heating apparatus includes a heating element having a flat plate shape, a heat-resistant enclosure in which a space having a flat plate shape is provided, the heating element being disposed in the space with a gap provided between the heating element and the heat-resistant enclosure, a gas inlet joint connected to the heat-resistant enclosure to allow gas to flow into the space, a gas outlet joint connected to the heat-resistant enclosure to allow the gas that has passed through the space to flow out, and an induction coil disposed in parallel with the heating element on a lower surface of the heat-resistant enclosure, the induction coil inductively heating the heating element on the basis of electric power supplied.

A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.