Implementations disclosed herein generally relate to systems and methods of protecting a substrate support in a process chamber from cleaning fluid during a cleaning process. The method of cleaning the process chamber includes positioning in the process chamber a cover substrate above a substrate support and a process kit that separates a purge volume from a process volume. The method of cleaning includes flowing a purge gas in the purge volume to protect the substrate support and flowing a cleaning fluid to a process volume above the cover substrate, flowing the cleaning fluid in the process volume to an outer flow path, and to an exhaust outlet in the chamber body. The purge volume is maintained at a positive pressure with respect to the process volume to block the cleaning fluid from the purge volume.

Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

A substrate processing apparatus includes processing units, an exhaust path, a gas processing apparatus and a controller. Each processing unit is configured to process a substrate by using a chemical. A gas exhausted from the processing units flows through the exhaust path. The gas processing apparatus is provided in the exhaust path to remove a target component contained in the gas. The gas processing apparatus includes a duct, a partition plate and a liquid supply. The duct has therein a flow path. The partition plate divides the flow path into spaces, and is formed of a porous material, through which the gas passes, configured to retain a liquid. The liquid supply is configured to supply a dissolving liquid configured to dissolve the target component to the partition plate. The controller adjusts a flow rate of the dissolving liquid according to operation information indicating an operational status of the processing units.

A fluid supply apparatus includes a container supply holder configured to supply a container to a cap separator using a loading box, the container including a detachable nozzle cap, and configured to store a process fluid, a cap separator configured to receive the container from the loading box and separate the nozzle cap from a container body of the container using a cap clamper and a rotation actuator, the cap clamper configured to clamp and hold the nozzle cap, and the rotation actuator configured to rotate the container body, a fluid supplier configured to supply the process fluid contained in the container body through a fluid supply line, and a controller configured to control the container supply holder, the cap separator, and the fluid supplier.

A semiconductor device manufacturing apparatus according to an embodiment includes: a chamber; a holder provided in the chamber and capable of adsorbing a substrate, the holder including a recess on a surface, a first hole provided in the recess, and a second hole provided in the recess; a first gas passage connected to the first hole; a second gas passage connected to the second hole; a first valve provided in the first gas passage; a second valve provided in the second gas passage; a first gas supply pipe for supplying a first gas to the recess; and a gas discharge pipe for discharging a gas from the recess. The first gas passage and the second gas passage are connected to the first gas supply pipe, or the first gas passage and the second gas passage are connected to the gas discharge pipe.

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

There is provided an exhaust gas processing apparatus configured to cause a processing gas to be exposed to or come into contact with a liquid and thereby detoxify the processing gas. The exhaust gas processing apparatus comprises a suction casing provided with an inlet which the processing gas is sucked into and with an outlet which the processing gas is flowed out from; a liquid tank configured to receive an outlet-side part of the suction casing and store the liquid therein; and one or multiple spray nozzles placed in the liquid tank. The outlet of the suction casing is arranged to be located above a liquid surface of the liquid stored in the liquid tank. The one or multiple spray nozzles are configured to spray the liquid from around the outlet of the suction casing to a peripheral part of the outlet.

A photoresist coating device includes a liquid vaporization module and a photoresist coating module. The liquid vaporization module is for converting a liquid photoresist into a gaseous photoresist and conveying the gaseous photoresist to a photoresist coating module. The photoresist coating module comprises a vapor coating unit, a cover plate and a carrying table, in which the vapor coating unit comprises a vapor channel and a vapor spray hole, in which the vapor spray hole is provided through the cover plate; the carrying table is for loading a substrate; and the cover plate is provided on a side of the carrying table close to the substrate. The vapor coating unit acquires the gaseous photoresist through the vapor channel and conveys the gaseous photoresist to a surface to be coated of the substrate on the carrying table through the vapor spray hole to form a photoresist coating.

The present inventive concept relates to a substrate processing apparatus and a spray module of the substrate processing apparatus, the substrate processing apparatus comprising: a chamber for providing a processing space; a lid for covering the upper portion of the chamber; a substrate support portion which supports at least one substrate and rotates about a rotary shaft; a gas spray portion which is above the substrate support portion in a diameter direction from the rotary shaft of the substrate support portion and which sprays a processing gas; and a measuring portion which is arranged to be in parallel with or to be inclined in a direction at a certain angle with respect to the diameter direction on a measurement position that is spaced apart from the diameter direction and which measures the temperature of the substrate supported by the substrate support portion or the temperature of the substrate support portion.