Apparatuses for controlling fluid flow are important components for delivering process fluids for semiconductor fabrication. These apparatuses for controlling fluid flow require a variety of fluid flow components which are tightly packaged within the apparatuses for controlling flow. In an effort to improve packaging density, fluid delivery modules preferably incorporate both active and passive components into a single substrate block. This enables increases in packaging density as well as enabling reduced cost through greater simplification of the fluid delivery module. For instance, incorporating a filter to filter incoming fluid with a valve or other component in a single monolithic block avoids the need for separate components which add cost and complexity.

A substrate processing method includes supplying processing gas from a plurality of gas holes formed along a longitudinal direction of an injector, which extends in a vertical direction along an inner wall surface of a processing container and is rotatable around a rotational axis extending in the vertical direction, to perform a predetermined process on a substrate accommodated in the processing container. The predetermined process includes a plurality of operations, and a supply direction of the processing gas is changed by rotating the injector in accordance with the operations.

A ruthenium film forming method includes: causing chlorine to be adsorbed to an upper portion of a recess at a higher density than to a lower portion of the recess by supplying a chlorine-containing gas to a substrate including an insulating film and having the recess; and forming a ruthenium film in the recess by supplying a Ru-containing precursor to the recess to which the chlorine is adsorbed.

ABSTRACT An apparatus is for collecting a by-product in a semiconductor manufacturing process. The apparatus includes: a housing cooling channel on an inner wall thereof to cool exhaust gas which is temperature-controlled by a heater while being introduced through a gas inlet of an upper plate; an internal collecting tower including multiple vertical plates and multiple horizontal plates that are assembled, and condensing and collecting a by-product from the exhaust gas; a main cooling channel having a serpentine shape and cooling the exhaust gas uniformly by using coolant while passing through the internal collecting tower; and a multi-connection pipe sequentially supplying the coolant to the upper plate cooling channel, the housing cooling channel, and the main cooling channel and discharging the coolant, by using a supply pipe and a discharge pipe that are provided outside the housing.

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

A gas-detecting apparatus includes a pump module connected to a first input and a second input to intake air, a sensor module including at least one unit sensor configured to output a sensing signal in response to gas present in the air, and a control module configured to detect the gas using the sensing signal. The control module controls the pump module to intake second air by opening the second input when gas is detected in first air introduced through the first input, and determines that gas is detected when a concentration of gas detected in the second air is lower than a concentration of gas detected in the first air.

A substrate transfer system includes a load lock module, an atmospheric transfer module having a first sidewall adjacent to the load lock module and a second sidewall remote from the load lock module, the atmospheric transfer module being connected to the load lock module, and a substrate transfer robot disposed in the atmospheric transfer module. The substrate transfer robot includes a base configured to reciprocate along the first sidewall, a substrate transfer arm disposed on the base, and a flow rectifier surrounding the base, the flow rectifier being configured, upon movement of the base, to create an obliquely downward air flow in a direction opposite to a moving direction of the base.

A semiconductor processing system includes a semiconductor processing chamber, a pump, an exhaust line in fluid communication with the chamber through the pump, and a steam generator and reactor. The steam generator and reactor has a process conduit with an inlet in line in the exhaust line for generating superheated steam and effecting transformations of chemicals in the exhaust fluid flowing in exhaust line into the inlet.

A chamber in which heating treatment is performed by irradiating a semiconductor wafer with light and a combustible gas supply source are connected in communication with each other by a combustible gas supply pipe. An electrical flow rate controller for regulating a supply flow rate of a combustible gas, and the like are interposed in the combustible gas supply pipe. Part of the combustible gas supply pipe which includes the electrical flow rate controller and the like that can be an ignition source is surrounded by an inner enclosure. Nitrogen which is a noncombustible gas is supplied to an inner space inside the inner enclosure. The noncombustible gas is supplied to the inner space, and a gas remaining in the inner space is discharged, whereby the concentration of oxygen in the inner space is decreased to below an explosion limit. This prevents fires and explosions of the combustible gas.