The present disclosure provides a technique that includes: loading a substrate into a process chamber in which the substrate is processed; and processing the substrate by supplying a first inert gas to a peripheral portion of the substrate and simultaneously supplying a mixed gas of a second inert gas different from the first inert gas and a process gas to a surface of the substrate.

A temperature adjustment apparatus for a high temperature oven, comprising: an oven comprising an oven cavity, at least one intake manifold, at least one exhaust manifold, an inner casing cover, at least one heating element, and a chamber door; wherein a processing chamber is formed inside the oven cavity; the inner casing cover is disposed around an inner wall of the oven cavity; the inner casing cover is heated by at least one of the heating elements, and the processing chamber is heated by the inner casing cover in the form of thermal radiation; and a gas reprocessing device comprising a gas recovery device, wherein a gas in the processing chamber is sucked into the gas reprocessing device by using the gas recovery device, and the sucked gas can be directly discharged from the gas reprocessing device or reprocessed and flows back to the processing chamber.

A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.

A sub-fab area installation apparatus capable of reducing a power consumption used in manufacturing of semiconductors is disclosed. The sub-fab area installation apparatus includes: a vacuum pump configured to evacuate a processing gas from a processing chamber of the semiconductor manufacturing equipment; a cooling unit configured to cool a first circulation liquid used in the processing chamber; a heating unit configured to heat a second circulation liquid used in the processing chamber; an abatement device configured to detoxify the processing gas discharged from the vacuum pump; and a cooling-liquid line configured to pass a cooling liquid therethrough. The cooling liquid is supplied from a cooling source. The cooling-liquid line includes: a first downstream line, a second downstream line, and a third downstream line configured to supply the cooling liquid that has passed through the abatement device, the vacuum pump, and the cooling unit to the heating unit.

There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.

A semiconductor manufacturing system has a turbine disposed inside a semiconductor manufacturing clean room. A controller is disposed outside the semiconductor manufacturing clean room and is coupled to the turbine through a first cable. A first computer is coupled to the controller through a second cable. The first computer has a web server configured to communicate with the controller via the second cable. A second computer is disposed in the semiconductor manufacturing clean room and is connected to the web server of the first computer. The web server hosts a web page including a reset button configured to issue a reset command to the controller. The web page also displays a status of the turbine.

An apparatus for treating a substrate includes a heat treatment chamber having an interior space, a housing that is provided in the interior space and that has a treatment space therein, a gas supply line that supplies, into the treatment space, a hydrophobic gas for hydrophobicizing the substrate, and a decomposition unit that decomposes an alkaline gas leaking from the treatment space to the interior space.

An ultrasonic/megasonic cleaning device includes a cleaning unit including an upper casing and a lower casing connected to form a hollow chamber, an ultrasonic/megasonic generator provided in the hollow chamber, and a bottom quartz component provided with a quartz rod array composed of a plurality of vertically arranged quartz rod-like structures; a spray arm connected to the upper casing; and an ultrasonic/megasonic frequency control unit connected between the at least one signal source and the ultrasonic/megasonic generator, for constantly varying a frequency of the electrical signal output from the at least one signal source and introducing the electrical signal into the ultrasonic/megasonic generator, so as to dynamically vary an oscillation frequency of the ultrasonic/megasonic wave generated by the ultrasonic/megasonic generator; wherein the ultrasonic/megasonic frequency control unit includes a frequency-switching timing control unit configured to trigger am ultrasonic/megasonic frequency switching control unit to switch the oscillation frequency of the ultrasonic/megasonic wave from a first frequency to a second frequency when the ultrasonic/megasonic wave has been generated at the first frequency for a time period, the time period being randomly selected within a time range.

There is provided a technique that includes: (a) lowering a temperature in a process chamber supplied with a cleaning gas containing a halogen element while being heated to a first temperature, from the first temperature to a second temperature equal to or lower than a temperature at which substrate processing is performed in the process chamber, while vacuum-exhausting an inside of the process chamber; and (b) after (a), supplying a gas containing a water vapor into the process chamber while vacuum-exhausting the inside of the process chamber, to cause the halogen element remaining in the process chamber to react with the water vapor.

A film deposition method includes maintaining an inside of a chamber to have a predetermined pressure, cooling a stage, on which the object to be processed mounts, to have an ultralow temperature of −20° C., and mounting the object to be processed on the stage, supplying a gas including a low vapor pressure material gas of a low vapor pressure material into the inside of the chamber, and generating plasma from the supplied gas including the gas of the low vapor pressure material, and causing a precursor generated from the low vapor pressure material by the plasma to be deposited on a recess part of the object to be processed.