An apparatus for transferring a substrate is provided. A unit for transferring a substrate, includes a support structure, a first hand to place the substrate, a second hand stacked with the first hand and placing the substrate, a first guide rail guiding movement of a first support rod to support the first hand in the support structure, a second guide rail guiding movement of a second support rod in the support structure to support the second hand, and a pressure reducing member reducing pressure of an exhaust fluid passage provided in the support structure. The exhaust fluid passage includes a first fluid passage communicating with the first guide rail, a second fluid passage communicating with the second guide rail, and a third fluid passage formed by combining the first fluid passage with the second fluid passage. The pressure reducing member reduces pressure of the third fluid passage.

A processing method of a device wafer includes a mask coating step of coating a front surface of the device wafer with a water-soluble resin, a mask forming step of applying a laser beam along each division line, forming a groove, and removing a protective mask and a functional layer to expose a substrate, a plasma etching step of forming a division groove that divides the substrate along the groove by supplying a gas in a plasma condition, an expanding step of expanding a protective tape in a plane direction to expand a width of the division groove, an adhesive film dividing step of applying a laser beam along the division groove to divide the adhesive film that has been exposed due to the formation of the division groove, and a cleaning step of cleaning and removing the water-soluble resin.

A method of processing a wafer having a plurality of devices provided in respective areas demarcated on a face side of the wafer by a plurality of projected dicing lines. The method includes coating the face side with a protective film agent and thereafter drying the protective film agent into a protective film covering the face side, applying a laser beam having a wavelength absorbable by the wafer to the wafer along the projected dicing lines on the face side, thereby producing a plurality of laser-processed slots in the wafer, cleaning away the protective film, applying ultraviolet rays to the face side to remove an organic substance deriving from the protective film and remaining on the face side, and covering coverage areas corresponding to the respective devices on the face side with an encapsulating resin.

A lithography apparatus includes a wafer chuck configured to hold a wafer, a fluid source configured to contain a fluid to be applied towards the wafer during a lithography process, a dispensing nozzle positioned above the wafer chuck and in fluid communication with the fluid source, the dispensing nozzle having an adjustable cross-section, and a mechanical mechanism operable to apply a force towards an outer surface of the dispensing nozzle to change the adjustable cross-section.

Method for coating a substrate with a coating material is described, in particular with a coating or photoresist, wherein said substrate is provided in said method. Said coating material is applied to said upper side of said substrate. A gas flow is generated, said gas flow being directed from said underside of said substrate to said upper side of said substrate, wherein said gas flow prevents a bead of said coating material forming on said edge of said upper side of said substrate or a previously existing bead is removed by means of said gas flow. In addition, a coating system is described.

Provided is a substrate treating apparatus. The substrate treating apparatus comprises: a support unit provided to support the substrate and rotate the substrate; a treatment liquid nozzle for supplying the treatment liquid onto the substrate supported by the support unit; a pre-wet liquid nozzle for supplying a pre-wet liquid onto a substrate supported by the support unit; and a controller for controlling the treatment liquid nozzle and the pre-wet liquid nozzle, wherein the controller controls the treatment liquid nozzle and the pre-wet liquid nozzle to perform a pre-wet step for supplying the pre-wet liquid to the substrate, and then a treatment liquid supply step for supplying the treatment liquid to the substrate and supplying the pre-wet liquid to the substrate during the supplying the treatment liquid to the substrate.

Disclosed is a method for treating a substrate in a plurality of chambers. The substrate treating method may include performing liquid treatment on a substrate located in a chamber through a supply line for connecting a circulation line and each of the plurality of chambers while the liquid circulates in the circulation line, wherein a flow rate per unit time of the liquid flowing downstream of a valve provided in the supply line is constantly maintained at a reference flow rate, and controlling an upstream flow rate which is a flow rate per unit time of the liquid flowing upstream of the circulation line rather than the supply lines or a downstream flow rate which is a flow rate per unit time of the liquid flowing downstream of the circulation line rather than the supply lines based on a distribution flow rate which is a flow rate per unit time of the liquid flowing upstream of the valve to maintain the reference flow rate.

A wafer processing apparatus includes an X-θ stage unit having a rotary chuck capable of moving in an X direction and rotating in a θ direction, wherein a wafer is mounted on the rotary chuck and the wafer includes an edge portion adjacent to an edge of the wafer. In addition, the wafer processing apparatus includes: an edge bead removal (EBR) measurement and eccentricity measurement unit which is capable of inspecting a bead removal state of the edge portion of the wafer, and measuring eccentricity between the center of the rotary chuck and the center of the wafer; and an edge exposure of wafer (EEW) process unit which exposes the edge portion of the wafer after correcting the eccentricity between the center of the rotary chuck and the center of the wafer measured by the EBR measurement and eccentricity measurement unit.

Provided is an apparatus for treating a substrate, which includes: a support unit supporting a substrate; a liquid supply unit supplying a treatment liquid to the substrate supported on the support unit; a heating unit heating a specific location of the substrate by irradiating a laser to the specific location on the substrate supported on the support unit, and swingably moved between the specific location of the substrate, and a waiting location of deviating from the substrate; a coordinate unit disposed below an irradiation end portion to which the laser is irradiated from the heating unit when the heating unit is positioned at the waiting location; and an image module monitoring the laser irradiated from the heating unit, in which the image module calculates a movement distance in which the heating unit is swingably moved on the coordinate unit to measure a first length in a longitudinal direction of the heating unit.

Provided is an apparatus for treating a substrate. The substrate treating apparatus may include: a substrate support unit supporting a substrate; a nozzle supplying a liquid to the substrate supported on the substrate support unit; a home port in which the nozzle waits; and an electrostatic measurement member measuring an electrostatic amount of a liquid dispensed from the nozzle in the home port.