The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.

A manufacturing process of an electronic device including the following steps is provided: placing a reaction part in a pre-reaction chamber; performing a pre-reaction process on the reaction part placed in the pre-reaction chamber; after performing the pre-reaction, transferring the reaction part from the pre-reaction chamber to a reaction chamber; placing a process device in the reaction chamber with the reaction part placed therein; and performing a reaction process on the process device placed in the reaction chamber.

A substrate processing apparatus capable of improving the uniformity of thin films on a substrate includes: a substrate support unit having a first slope; and a flow control ring arranged to surround the substrate support unit and having a second slope, wherein, during alignment, as the substrate support unit moves in a first direction, the first slope and the second slope contact each other, and due to the contact, the flow control ring slides in a second direction that is different from the first direction.

A semiconductor manufacturing system has a turbine disposed inside a semiconductor manufacturing clean room. A controller is disposed outside the semiconductor manufacturing clean room and is coupled to the turbine through a first cable. A first computer is coupled to the controller through a second cable. The first computer has a web server configured to communicate with the controller via the second cable. A second computer is disposed in the semiconductor manufacturing clean room and is connected to the web server of the first computer. The web server hosts a web page including a reset button configured to issue a reset command to the controller. The web page also displays a status of the turbine.

A processing method of processing a substrate in a processing apparatus includes performing a first grinding processing on the substrate in a first grinder; performing a second grinding processing on the substrate in a second grinder; performing a first re-grinding processing on the substrate in the first grinder; and performing a second re-grinding processing on the substrate in the second grinder. The substrate is ground to a final thickness in the second re-grinding processing.

A vacuumizing device includes a vacuum chamber, a bonding fixture and a vacuumizing system. The bonding fixture is disposed in the vacuum chamber and includes a substrate table provided with a plurality of grooves for retention of the substrate by suction. The vacuumizing system is disposed in communication with both the vacuum chamber and grooves. During vacuumizing by the vacuumizing system, a vacuum value in the grooves is smaller than or equal to a vacuum value in the vacuum chamber. In the vacuumizing device and methods, the vacuumizing system is used to vacuumize the grooves in the substrate table and the vacuum chamber so that the vacuum value in the grooves is always smaller than or equal to that in the vacuum chamber. As a result, the substrates are firmly retained on the substrate table without warping, thereby improving the quality of substrate bonding.

A method of controlling wafer bow in an integrated circuit fabrication process may include characterizing the wafer bow in response to performing one or more first fabrication processes to an active side of an integrated circuit wafer. Determining one or more second fabrication processes, to be applied to a back side of the integrated circuit wafer, to bring the wafer bow to below a predetermined threshold based on the one or more first fabrication processes the method may additionally include performing the one or more second fabrication processes on the back side of the integrated circuit wafer.

Disclosed is a manufacturing apparatus of a light-emitting element. The manufacturing apparatus includes: a main transporting route including a first transfer device and a second transfer device connected to each other through a first transporting chamber; a sub-transporting route extending in a direction intersecting the main transporting route, the sub-transporting route including: a second transporting chamber connected to the first transfer device or the second transfer device; and a delivery chamber connected to the second transporting chamber; and a plurality of treatment chambers connected to the delivery chamber. A region to which the first transfer device, the second transfer device, the first transporting chamber, and the second transporting chamber are connected is under a continuous vacuum environment.

A vacuum pumping arrangement includes a first primary pump having an inlet and an outlet, and a first common pumping line fluidly connected to the inlet, the first common pumping line including a plurality of first common pumping line inlets each of which is fluidly connectable to at least one vacuum process chamber forming the semiconductor fabrication tool, the first primary pump and the first common pumping line handling deposition process flows. The pumping arrangement further including a second primary pump having an inlet and an outlet, and a second common pumping line fluidly connected to the inlet of the second primary pump, the second common pumping line including a plurality of second pumping line inlets each of which is fluidly connectable to at least one process chamber forming the semiconductor fabrication tool, the second primary pump and the second common pumping line handling cleaning process flows.

A substrate processing apparatus includes a substrate holder, a processing liquid supplying unit with a liquid nozzle discharging a processing liquid to an upper surface of the substrate. A moving unit moves the supplying unit between a process position at which the liquid nozzle faces the upper surface of the substrate and a retreat position. The supplying unit includes a first flow path in the processing liquid nozzle. The first flow path has one end part and the other end part that face a central region of the substrate and a peripheral region of the substrate, respectively, in a state where the supplying unit is positioned at the process position. It has a second flow path that supplies the processing liquid to the one end part, and a plurality of discharge ports in the processing liquid nozzle that are arranged along the first flow path direction and discharge the processing liquid in the first flow path to the substrate's upper surface.