A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

The present disclosure is a substrate processing apparatus including: a chamber configured to accommodate a substrate; a heat source configured to heat-treat the substrate; a heat ray sensor provided outside the chamber and configured to receive infrared rays radiated from the substrate; and an infrared ray transmission window provided in the chamber and configured to transmit an infrared ray having a wavelength greater than or equal to 8 μm to the heat ray sensor.

A semiconductor fabricating method for a film to be processed containing a transition metal on an upper surface of a semiconductor wafer placed in a processing chamber in a container being etched with a gas for complexing the transition metal supplied into the processing chamber, including a first step of adsorbing, to the film, the complexing gas, while supplying the complexing gas, then increasing a temperature of the wafer to form an organic metal complex on a surface of the film, and volatilizing and desorbing the organic metal complex, and a second step of adsorbing, to the surface of the film, the complexing gas at a low temperature, while supplying the complexing gas, then stopping the supply of the complexing gas, and stepwise increasing the temperature of the wafer to volatilize and desorb an organic metal complex formed on the surface of the film.

According to one aspect of a technique the present disclosure, there is provided a processing apparatus including: an inner tube provided with a substrate accommodating region in which substrates are accommodated along an arrangement direction; an outer tube provided outside the inner tube; gas supply ports provided on a side wall of the inner tube along the arrangement direction; first exhaust ports provided on the side wall of the inner tube along the arrangement direction; a second exhaust port provided at a lower end portion of the outer tube; and a gas guide for controlling a flow of gas in an annular space between the inner tube and the outer tube and including a first fin near a lowermost first exhaust port among the first exhaust ports that is closest to the second exhaust port in a space between the lowermost first exhaust port and the second exhaust port.

The present disclosure describes a wafer cooling/heating system that includes a load-lock and a thermo module. The load-lock uses a level stream design to improve temperature uniformity across one or more wafers during a cooling/heating process. The load-lock can include (i) a wafer holder configured to receive wafers at a front side of the load-lock; (ii) a gas diffuser with one or more nozzles along a back side of the load-lock, a side surface of the load-lock, or a combination thereof; and (iii) one or more exhaust lines. Further, the thermo module can be configured to control a temperature of a gas provided to the load-lock.

A substrate processing apparatus includes a temperature detector and a controller. The temperature detector detects a temperature of processing liquid before the temperature of the processing liquid in pre-dispensing in progress reaches a target temperature. The controller sets discharge stop duration of the processing liquid in the pre-dispensing based on target temperature prediction duration. The target temperature prediction duration is prediction duration until the temperature of the processing liquid reaches the target temperature from a detection temperature. The detection temperature is the temperature of the processing liquid detected by the temperature detector before the temperature of the processing liquid reaches the target temperature. The target temperature prediction duration is determined based on a temperature profile. The temperature profile indicates a record of the temperature of the processing liquid changing over time when the pre-dispensing processing was performed in the past according to the pre-dispensing condition.

The inventive concept relates to a substrate heating unit. The substrate heating unit includes a chuck stage having an inner space defined by a base and sidewalls, a heating unit provided in the inner space of the chuck stage, and a quartz window that covers the inner space of the chuck stage and has an upper surface on which the substrate is placed. The heating unit includes a heating plate having a disk shape with an opening in the center thereof and heating modules installed in respective heating zones on the heating plate that are divided from each other, each heating module having a printed circuit board on which heating light sources emitting light for heating are mounted.

Methods and apparatus for cleaving a substrate in a semiconductor chamber. The semiconductor chamber pressure is adjusted to a process pressure, a substrate is then heated to a nucleation temperature of ions implanted in the substrate, the temperature of the substrate is then adjusted below the nucleation temperature of the ions, and the temperature is maintained until cleaving of the substrate occurs. Microwaves may be used to provide heating of the substrate for the processes. A cleaving sensor may be used for detection of successful cleaving by detecting pressure changes, acoustic emissions, changes within the substrate, and/or residual gases given off by the implanted ions when the cleaving occurs.

An embodiment provides a wafer cassette stoker comprising: a cassette on which a plurality of wafers are loaded; a plurality of chambers disposed in one line while forming at least one layer, wherein the cassette after being cleaned is inserted in each of the chambers and a humidity control unit for supplying a compressed dry air (CDA) into the insides of the chambers so as to control humidity of the cassette.

A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.