A method includes flowing gas comprising an oxidation inhibiting gas into a chamber of a semiconductor processing system. The chamber includes one or more of a factory interface of the semiconductor processing system or an adjacent chamber that is mounted to the factory interface. The method further includes receiving, via one or more sensors coupled to the chamber, sensor data indicating at least one of a current oxygen level within the chamber or a current moisture level within the chamber. The method further includes determining, based on the sensor data, whether to perform an adjustment of a current amount of the oxidation inhibiting gas entering into the chamber. The method further includes, responsive to determining to perform the adjustment, causing the adjustment of the current amount of the oxidation inhibiting gas entering into the chamber.

A semiconductor manufacturing method using a semiconductor manufacturing apparatus 100 including a treating chamber 1, the method including: a first process of supplying a complexing gas into the treating chamber in which a wafer 2 having a surface having a transition metal-containing film formed thereon is placed, to adsorb an organic compound as a component of the complexing gas to the transition metal-containing film, the transition metal-containing film containing a transition metal element; and a second process of heating the wafer in which the organic compound is adsorbed to the transition metal-containing film, to react the organic compound with the transition metal element, thereby converting the organic compound into an organometallic complex, and desorbing the organometallic complex, wherein the organic compound has Lewis basicity, and is a multidentate ligand molecule capable of forming a bidentate or more coordination bond with the transition metal element.

A tray elevator of a test handler includes a tray mounter on which a test tray is seated and having a support part and a through hole vertically penetrating the support part, a shaft vertically extending through the through hole of the tray mounter and configured to provide a path for elevating or lowering the tray mounter, a guide bushing including an outer surface and a groove at the outer surface, inserted into the through hole of the tray mounter, and configured to move along the shaft, and a ring inserted into the groove of the guide bushing.

The present invention is provided with: a stage having a placing surface for a semiconductor chip, and a first heater heating the placing surface; a bonding head having a contact surface to be in contact with an subject, a second temperature sensor measuring the temperature of the subject via the contact surface, and a second heater heating the contact surface, said bonding head being driven in at least the orthogonal direction with respect to the placing surface; and a control unit measuring the temperature of the subject based on a temperature detection value of the second temperature sensor, said temperature detection value having being obtained by heating the placing surface and the contact surface to predetermined target temperatures, respectively, by means of the first and second heaters, then bringing the contact surface into contact with the subject in a state wherein heating by the second heater is stopped.

A method for temperature measurement used in an RF processing apparatus for semiconductor includes generating by electrodes an RF signal sequence having multiple discontinuous RF signals that are separated by a time interval; and generating a temperature sensing signal by a thermal sensor during the time interval.

A heater assembly and method of controlling the heater assembly is provided. The heater assembly includes a resistive heater and a substrate, and the resistive heater comprises a plurality of heating zones disposed along a perimeter of the substrate. Each of the plurality of heating zones are independently controllable such that azimuthal temperature control of the heater assembly is provided. The plurality of resistive heating elements may be connected in series and have a common ground electrical lead. In the alternative, the plurality of resistive heating elements may each have a ground electrical lead and be isolated from each other.

A liquid treatment apparatus includes: a substrate holder for holding a substrate; a discharge nozzle for discharging a treatment liquid onto the substrate; a liquid supply pipe for supplying the treatment liquid from a treatment liquid storage source to the discharge nozzle; a gas pipe that encompasses the liquid supply pipe and through which an inert gas for adjusting the temperature of the treatment liquid flows in a space between the gas pipe and the liquid supply pipe; a processing container in which the substrate holder, the discharge nozzle, the liquid supply pipe, and the gas pipe are provided; and an atmosphere gas supply part for supplying an atmosphere gas into the processing container. The gas pipe is provided so that an extension portion between an upstream end inside the processing container and an encompassing portion is folded back inside the processing container in a plan view.

A thermal processing system for performing thermal processing can include a workpiece support plate configured to support a workpiece and heat source(s) configured to heat the workpiece. The thermal processing system can include window(s) having transparent region(s) that are transparent to electromagnetic radiation within a measurement wavelength range and opaque region(s) that are opaque to electromagnetic radiation within a portion of the measurement wavelength range. A temperature measurement system can include a plurality of infrared emitters configured to emit infrared radiation and a plurality of infrared sensors configured to measure infrared radiation within the measurement wavelength range where the transparent region(s) are at least partially within a field of view the infrared sensors. A controller can be configured to perform operations including obtaining transmittance and reflectance measurements associated with the workpiece and determining, based on the measurements, a temperature of the workpiece less than about 600° C.

A temperature controlling apparatus includes a platen, a first and a second conduits, and a first and a second outlet thermal sensors. The first conduit includes a first inlet, a first outlet, and a first heater. A first fluid enters the first inlet and exits the first outlet, the first heater heats the first fluid to a first heating temperature, and the first fluid is dispensed on the platen. The second conduit includes a second inlet, a second outlet, and a second heater. A second fluid enters the second inlet and exits the second outlet, the second heater heats the second fluid to a second heating temperature, and the second fluid is dispensed on the platen. The first and the second outlet thermal sensors are respectively disposed at the first and the second outlets to sense temperatures of the first and the second fluid.

A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.