A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

A processing condition specifying method that includes Steps S31, S32, and S33. In Step S31, a prediction thickness information piece containing prediction values of thicknesses after processing on the substrate W is calculated for each of a plurality of recipe information pieces based on measurement thickness information containing measurement values of thicknesses of the substrate W. In Step S32, the prediction thickness information pieces each calculated for a corresponding one of the recipe information pieces are evaluated according to a prescribed evaluation method and a prediction thickness information piece is selected from among the prediction thickness information pieces. In Step S33, a recipe information piece corresponding to the selected prediction thickness information piece is specified. The measurement values contained in the measurement thickness information indicate a thickness of the substrate W measured before processing on the substrate W.

Provided is a system for stabilizing a flow of gas introduced into a sensor, wherein, in connection with manufacturing equipment comprising a process chamber, a process chamber vacuum pump installed to remove internal gas of the process chamber, and a sensor device configured to be able to receive the internal gas of the process chamber through a sensor connecting pipe and to detect components thereof, the system comprises a sensor connecting pipe and a bypass pipe branching off from the sensor connecting pipe such that a part of the gas can be directly discharged to the outside without being introduced into the sensor, and the system is accordingly configured to stably provide the sensor device with a part of the internal gas within a predetermined range per time, regardless of a change in the pressure state of the process chamber.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing a treating space; and a fluid supply unit supplying a treating fluid to the chamber, and wherein the fluid supply unit includes: a supply tank storing the treating fluid; a supply line connecting the supply tank and the chamber; and a plurality of valves installed at the supply line, and wherein any one valve among the plurality of valves is provided as a safety valve, and wherein the safety valve is opened after confirming that the chamber has been switched to a closed state when supplying the treating fluid from a tank to the chamber.

A supercritical fluid processing apparatus including a supercritical fluid supply module including a gas liquefier to liquefy a gas transferred from a gas supply and provide a liquefied fluid, a storage tank to change the liquefied fluid to a supercritical state and store a supercritical fluid, and an internal pipe connecting the gas liquefier to the storage tank; an exhaust fluid supply module including an exhaust fluid liquefier including a regeneration storage tank to collect a first exhaust fluid from the storage tank, and a refrigerant pipe to liquefy the first exhaust fluid in the regeneration storage tank and maintain the liquefied first exhaust fluid at a predetermined temperature/pressure; a first exhaust pipe to transfer the first exhaust fluid from the storage tank to the exhaust fluid liquefier; and a resupply pipe to resupply the first exhaust fluid collected and liquefied in the exhaust fluid liquefier to the storage tank.

A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 to drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency f.sub.2 and power P.sub.2 to drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 again; repeating above steps till the substrate being cleaned. Normally, if f.sub.1=f.sub.2, then P.sub.2 is equal to zero or much less than P.sub.1; if P.sub.1=P.sub.2, then f.sub.2 is higher than f.sub.1; if the f.sub.1<f.sub.2, then, P.sub.2 can be either equal or less than P.sub.1.

A wafer drying method that detects molecular contaminants in a drying gas as a feedback parameter for a multiple wafer drying process is disclosed. For example, the method includes dispensing, in a wafer drying module, a drying gas over a batch of wafers. Further, the method includes collecting the drying gas from an exhaust of the wafer drying module and determining the concentration of contaminants in the drying gas. The method also includes re-dispensing the drying gas over the batch of wafers if the concentration of contaminants is greater than a baseline value and transferring the batch of wafers out of the wafer drying module if the concentration is equal to or less than the baseline value.

A substrate bonding apparatus for bonding a first substrate to a second substrate includes a first bonding chuck supporting the first substrate, a second bonding chuck disposed above the first bonding chuck and supporting the second substrate, a resonant frequency detector detecting a resonant frequency of a bonded structure with the first substrate and the second substrate which are at least partially bonded to each other, and a controller controlling a distance between the first bonding chuck and the second bonding chuck according to the detected resonant frequency of the bonded structure.

Embodiments disclosed herein comprise a sensor. In an embodiment, the sensor comprises a substrate having a first surface and a second surface opposite from the first surface. In an embodiment, the sensor further comprises a first electrode over the first surface of the substrate, and a second electrode over the first surface of the substrate and adjacent to the first electrode. In an embodiment, the sensor further comprises a barrier layer over the first electrode and the second electrode.

An apparatus for processing a substrate may include a drain box for receiving a solution drained in a predetermined process, a drain line for discharging the solution from the drain box to an outside, and at least one spray member for providing a gas and/or a liquid to block an air flowed into the drain box and/or to control a humidity in the drain box.