According to one embodiment of the present disclosure, provided is a substrate cleaning device including: a substrate holder configured to hold a substrate; a substrate cleaning member configured to come into sliding contact with the held substrate, and clean the substrate using a first cleaning liquid supplied from a first nozzle; a self-cleaning member configured to come into sliding contact with the substrate cleaning member at a retreat position separated from the substrate holder, and performs self-cleaning on the substrate cleaning member using a second cleaning liquid supplied from a second nozzle; a measurement module configured to measure a physical property value of a waste liquid of the second cleaning liquid used for the self-cleaning of the substrate cleaning member; and a controller configured to estimate a number of fine particles adhering to the cleaned substrate based on the physical property value of the waste liquid.

A high-pressure processing system for processing a layer on a substrate includes a first chamber, a support to hold the substrate in the first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to increase the pressure within the first chamber to at least 10 atmospheres while the first chamber is isolated from the second chamber, an exhaust system comprising an exhaust line to remove gas from the first chamber, and a common housing surrounding both the first gas delivery module and the second gas delivery module.

Data received from an in-situ monitoring system includes, for each scan of a sensor, a plurality of measured signal values for a plurality of different locations on a layer. A thickness of a polishing pad is determined based on the data from the in-situ monitoring system. For each scan, a portion of the measured signal values are adjusted based on the thickness of the polishing pad. For each scan of the plurality of scans and each location of the plurality of different locations, a value is generated representing a thickness of the layer at the location. This includes processing the adjusted signal values using one or more processors configured by machine learning. A polishing endpoint is detected or a polishing parameter is modified based on the values representing the thicknesses at the plurality of different locations.

Disclosed is a dicing system including a protection layer forming apparatus, a patterning apparatus, a plasma treatment apparatus, a measuring apparatus that obtains at least of first processing data relating to a protection layer, second processing data relating to a mask, and third processing data relating to element chips, and a control unit that operates at least one of the protection layer forming apparatus, the patterning apparatus, and the plasma treatment apparatus on a recipe that is defined for each of the apparatuses. The control unit determines, based on at least one of the first processing data, whether or not to modify the recipe, the second processing data, and the third processing data, modifies the at least one of the recipes if the recipe needs to be modified, and operates at least one of the protection layer forming apparatus, the patterning apparatus, and the plasma treatment apparatus based on the modified recipe.

In a method of controlling a plasma beam of a plasma etcher a flow rate controller of the plasma etcher is set to generate one or more flow rates of an etching gas corresponding to one or more plasma beams of the plasma etcher. The emitted light generated by plasma discharge corresponding to the one or more plasma beams of the plasma etcher is monitored. The flow rate controller is calibrated based on the one or more flow rates and a corresponding emitted light of the plasma discharge.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber providing an inner space; a fluid supply unit configured to supply a drying fluid to the inner space; and a fluid exhaust unit configured to exhaust the drying fluid from the inner space, and wherein the fluid exhaust unit includes an exhaust line connected to the chamber; a pressure adjusting member installed at the exhaust line and configured to maintain a pressure of the inner space at a set pressure; and a heating member installed at the pressure adjusting member or a back end of the pressure adjusting member.

An information processing apparatus executes a simulation of a process state being executed in a semiconductor manufacturing apparatus using a simulation model of the semiconductor manufacturing apparatus. The information processing apparatus includes: a physical sensor data acquisition unit that acquires physical sensor data measured at the semiconductor manufacturing apparatus that executes a process according to a process parameter; and a simulation execution unit that executes a simulation by the simulation model according to the process parameter including the physical sensor data, and calculate virtual sensor data and virtual process result data. The physical sensor data acquired by the physical sensor data acquisition unit includes a temperature of a gas introduced into the semiconductor manufacturing apparatus that executes the process.

A temperature correction information calculation device includes a model storage unit that stores a model for generating temperature correction information in which a temperature correction value is associated with a cumulative film thickness on an inner wall of a semiconductor manufacturing apparatus that forms a film on a processing target object by a heat treatment at a set temperature corrected according to the cumulative film thickness; a learning determination unit that determines whether or not to update the model when a film forming result by the heat treatment is obtained; a model learning unit that updates the model based on the film forming result when the learning determination unit determines to update the model; and a temperature correction information generation unit that generates the temperature correction information using the model updated by the model learning unit and corrects the set temperature by the temperature correction information.

A method of processing a plurality of substrates includes immersing the plurality of substrates into a bath solution contained in a bath chamber; generating gas bubbles in the bath solution; projecting light from a light source toward the bath chamber; generating light sensor data by capturing light emanating off the bath chamber after interacting with the gas bubbles with a light sensor; and converting the light sensor data into a metric for the bath solution.

Exemplary semiconductor processing systems may include a substrate support defining an aperture therethrough. The processing systems may include a light assembly having a light source that emits an optical signal that is directed toward the aperture. The optical signal may have a high angle of incidence relative to the substrate support. The processing systems may include a photodetector aligned with an angle of reflectance of the optical signal.