A substrate processing apparatus includes a first process chamber in which a target substrate is processed, a first tank connected to the first process chamber to supply a first chemical to the first process chamber, a second process chamber in which the target substrate is processed, and a second tank connected to the second process chamber to supply a second chemical to the second process chamber. A metal ion contained in the first chemical supplied to the first process chamber has an ion concentration greater than an ion concentration of the metal ion contained in the second chemical supplied to the second process chamber.

The present disclosure describes a wafer cleaning process in which a drained cleaning solution, which is used to remove metal contaminants from the wafer, is sampled and analyzed to determine the concentration of metal ions in the solution. The wafer cleaning process includes dispensing, in a wafer cleaning station, a chemical solution on one or more wafers; collecting the dispensed chemical solution; determining a concentration of contaminants in the chemical solution; in response to the concentration of the contaminants being greater than a baseline value, adjusting one or more parameters in the cleaning process; and in response to the concentration of the contaminants being equal to or less than the baseline value, transferring the one or more wafers out of the wafer cleaning station.

The present disclosure relates to the technical field of wafer cleaning, and in particular to a wafer cleaning device and a wafer cleaning system. The wafer cleaning device includes a liquid inlet pipe, a first liquid discharge pipe, a first valve and a liquid supply device, wherein the liquid inlet pipe has an inlet terminal and an outlet terminal; a wall of the liquid inlet pipe is protruded outward to form a protrusion, the protrusion having a cavity; one terminal of the first liquid discharge pipe is communicated with the cavity, while the other terminal thereof is communicated with a container; the first valve is arranged on the liquid inlet pipe and located between the protrusion and the outlet terminal; and, the liquid supply device is communicated with the inlet terminal of the liquid inlet pipe to import cleaning solution into the liquid inlet pipe.

Systems and methods are provided for monitoring wafer bonding and for detecting or determining defects in a wafer bond formed between two semiconductor wafers. A wafer bonding system includes a camera configured to monitor bonding between two semiconductor wafers. Wafer bonding defect detection circuitry receives video data from the camera, and detects a bonding defect based on the received video data.

The present disclosure provides a method and an apparatus of controlling a semiconductor manufacturing device, a medium and a semiconductor manufacturing device. The method of controlling a semiconductor manufacturing device includes: receiving a control instruction, and cutting off or turning on a first airflow path; and when the first airflow path is cut off based on the control instruction, driving an air pumping terminal of an air pumping pipe to be connected to an air outlet terminal of an air intake pipe, and turning on a negative pressure generating device and pumping air from the air intake pipe; or when the first airflow path is turned on based on the control instruction, driving the air pumping terminal to be disconnected from the air outlet terminal of the air intake pipe, and turning off the negative pressure generating device and stopping pumping.

The substrate has a plurality of chip regions each being provided with a structure to be a power device, and is provided with a to-be-processed film. The thickness profile of the to-be-processed film in the radial direction is measured by scanning with the sensor in the radial direction while the substrate is rotated. The average thickness of the thickness profile is calculated. At least one radial position where the thickness profile has an average thickness is extracted as at least one candidate position. At least one of the at least one candidate position is determined to be at least one measurement position. Processing liquid is supplied from a nozzle onto the to-be-processed film of the substrate while the substrate is rotated. The sensor monitors the time-dependent change in the thickness of the to-be-processed film in at least one measurement position while the substrate is rotated.

A semiconductor processing system includes a processing chamber configured to perform a semiconductor manufacturing process on each of a plurality of wafers. The processing chamber includes at least one consumable component, and a substrate handling module located proximate the processing chamber and in communication with the processing chamber via a wafer access port. The wafer handling module includes a wafer handling robot configured to transfer each of the wafers between to the substrate handling module and the processing chamber through the wafer access port, and an optical diagnostic system including an optical sensor configured to detect an optical signal from the at least one consumable component. A controller is configured to cause the processing chamber to perform the semiconductor manufacturing process on each respective wafer and to cause the optical diagnostic system to detect the optical signal during a time when the processing chamber is not performing the semiconductor manufacturing process on the wafers.

Semiconductor processing systems and methods are provided in which an amount or concentration of a chemical in a chemical mixture contained in a tank is automatically controlled based on a sensed properties of the chemical mixture. In some embodiments, a semiconductor processing system includes a processing tank that is configured to contain a chemical mixture. A chemical sensor is configured to sense one or more properties of the chemical mixture. The system further includes an electrically controllable valve that is configured to adjust an amount of the first chemical in the chemical mixture based on the sensed one or more properties of the chemical mixture.

An apparatus includes a measurement chamber configured to retain one or more sample substances. The apparatus includes an entrance window mounted on a side of the measurement chamber. The apparatus includes a light source configured to generate an incident light beam. The apparatus includes a Raman sensor configured to collect inelastically scattered light from the chamber, and measure an intensity of a Raman peak of a first substance from the one or more sample substances based on the collected inelastically scattered light. The apparatus further includes a processor configured to (i) calculate a concentration of the first substance based on at least the measured intensity of the Raman peak of the first substance, (ii) determine the end point of a wafer cleaning process based on a calculated concentration of the first substance, and (iii) terminate the wafer cleaning process based on the determined end point.

Exemplary methods of semiconductor processing may include etching one or more features partially through a dielectric material to expose material from one or more layer pairs formed on a substrate. The methods may include halting the etching prior to penetrating fully through the dielectric material, and prior to exposing material from all layer pairs formed on the substrate. The methods may include forming a layer of carbon-containing material on the exposed material from each of the one or more layer pairs having exposed material. The methods may include etching the one or more features fully through the dielectric material to expose material for each remaining layer pair formed on the substrate.