A laser processing device includes an irradiation unit configured to irradiate an object with laser light, an image capturing part configured to capture an image of the object with light having transparency to the object, a display unit configured to display information, and a control unit configured to control at least the irradiation unit, the image capturing part, and the display unit. The control unit performs a first process of irradiating the object with the laser light by control of the irradiation unit to form a modified spot and a fracture extending from the modified spot in the object so as not to reach an outer surface of the object, a second process of, after the first process, capturing an image of the object by control of the image capturing part and acquiring information indicating a formation state of the modified spot and/or the fracture.

A substrate processing apparatus that accommodates a substrate holder in which a substrate is placed in a processing container and forms a film onto the substrate, includes: a film thickness meter that measures a thickness of the film formed on the substrate; a state analysis unit that analyzes variation of the film thickness from a measurement result output from the film thickness meter at a plurality of measurement points where the film thickness on the substrate is measured; a singular point detection unit that, based on the analysis result, detects a measurement point where a difference from an adjacent measurement point deviates from a predetermined condition, as a singular point; and a singular point correction unit that corrects a measurement result of the singular point so that the difference of the film thickness between the singular point and the adjacent measurement point is within a predetermined condition.

A production apparatus for producing a structural body includes: a holding mechanism that holds a processing target in contact with an etching solution, the processing target including an etch region that is made of a Group III nitride, and on which photoelectrochemical etching is to be performed; a light emitting device that irradiates the processing target with first light for performing the photoelectrochemical etching; a light emitting device that irradiates the processing target with second light that has a wavelength longer than that of the first light; and a measurement device that measures reflected light resulting from the second light being reflected off a surface of the etch region.

There is provided a technique that includes a container in which a gas is generated; a first pipe connected between the container and a reaction chamber and including a straight pipe portion; a first pressure measurer installed at a first position of the straight pipe portion, and configured to measure a pressure of the gas; a second pressure measurer installed at a second position on a further downstream side of a flow of the gas than the first position, and configured to measure a pressure of the gas; and a controller configured to be capable of calculating a flow rate of the gas flowing through the straight pipe portion based on a pressure loss of the straight pipe portion, which is calculated from a measurement signal from the first pressure measuring part and a measurement signal from the second pressure measuring part, and controlling the flow rate of the gas.

A substrate processing system includes substrate processing apparatuses and a group management device. The substrate processing apparatuses each include a plan creating section. The plan creating section creates a plan indicating a timing when a processing liquid is used and a flow rate of the processing liquid. The processing liquid is supplied to the substrate processing apparatuses from a single resource system. The group management device includes a processing section. The processing section determines whether the total flow rate of the processing liquid to be used by the substrate processing apparatuses exceeds a threshold value based on the plans created by the substrate processing apparatuses. When determining that the total flow rate exceeds the threshold value, the processing section instructs one of the substrate processing apparatuses to adjust the plan thereof.

A flow guide apparatus includes an upper flow guide structure configured to receive a first gas from a remote source, and a lower flow guide structure attached to the upper flow guide structure. The upper flow guide structure and the lower flow guide structure are configured to receive at least one gas from at least one remote source. The flow guide apparatus further includes a line diffuser structure disposed between the lower flow guide structure and the upper flow guide structure. The line diffuser structure has a long axis along a length of the upper flow guide structure and a short axis. The line diffuser structure includes a plurality of through holes that are configured to approximately evenly distribute the at least one gas as it is output into a reactor.

A method of detecting failure causes in semiconductor processing systems may include receiving an indication of a failure in a semiconductor processing system and providing the indication of the failure as a query to a network representing the semiconductor processing system. The network may include nodes representing on-wafer effects and component functions, and relationships between the nodes that represent causal dependencies between the component functions and the on-wafer effects. The method may also include calculating a change in probabilities assigned to nodes representing the component functions resulting from the query, and generating an output indicating a probability of at least one of the component functions as a cause of the failure.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a treating bath having an accommodation space for accommodating a treating liquid; a support member configured to support at least one substrate in a vertical posture at the accommodation space; and a posture changing robot configured to change a posture of a substrate immersed in the treating liquid from the vertical posture to a horizontal posture, and wherein the posture changing robot comprises: a body configured to hold the substrate thereon; and a liquid supply member configured to supply a wetting liquid to the substrate placed on the body.

A system and method provides a more precise mole delivery amount of a process gas, for each pulse of a pulse gas delivery, by measuring a concentration of the process gas and controlling the amount of gas mixture delivered in a pulse of gas flow based on the received concentration of the process gas. The control of mole delivery amount for each pulse can be achieved by adjusting flow setpoint, pulse duration, or both.

A bonding device measures a position deviation amount of the chip with respect to the substrate in a state where the chip and the substrate are in contact, and corrects and moves the chip relatively to the substrate in such a way as to reduce the position deviation amount, based on the measured position deviation amount. Then, the bonding device fixes the chip to the substrate by irradiating a resin portion of the chip with an ultraviolet ray and curing the resin portion when the position deviation amount of the chip with respect to the substrate is equal to or less than a position deviation amount threshold value.