Disclosed herein are embodiments of a transfer chamber robot and methods of using the same. In one embodiment, a process tool for an electronic device manufacturing system comprises a transfer chamber, process chamber coupled to the transfer chamber, and a transfer chamber robot. The transfer chamber robot is configured to transfer substrates to and from the process chamber, and comprises a sensor configured to take measurements inside the process chamber.

Methods and apparatus for increasing a bonded area between an ultrathin die and a substrate. In some embodiments, the method may include cleaning the die and the substrate, placing the die on an upper surface of the substrate, compacting the die to the substrate using a downward force of at least one compacting roller on the die and the upper surface of the substrate to increase a bonded area between the die and the upper surface of the substrate, and annealing the die and the substrate. The compacting roller has a soft surface layer that engages with the die and the upper surface of the substrate. The soft surface layer has a Shore hardness of greater than approximately 30 and less than approximately 80. In some embodiments, the substrate and/or the compacting roller may rotate during contact with each other.

A substrate liquid processing apparatus A1 includes a processing tub 41 accommodating a processing liquid 43 and a substrate 8; a gas nozzle 70 discharging a gas into a lower portion within the processing tub 41; a gas supply unit 90 supplying the gas; a gas supply line 93 connecting the gas nozzle 70 with the gas supply unit 90; a decompression unit 95 introducing the processing liquid 43 within the processing tub 41 into the gas supply line 93 by decompressing the gas supply line 93; and a control unit 7 performing a first control of controlling the gas supply unit 90 to stop supply of the gas and controlling the decompression unit 95 to introduce the processing liquid 43 into the gas supply line 93 in a part of an idle period during which the substrate 8 is not accommodated in the processing tub 41.

An embodiment comprises: a guide moving in the vertical direction or the horizontal direction; a transfer arm provided on the guide and loading spaced apart wafers; a laser emission unit disposed on the guide and emitting first laser beams at the spaced apart wafers loaded on the transfer arm; and a laser detection unit disposed below the transfer arm and collecting, from among the first laser beams, second laser beams having passed through gaps between the spaced apart wafers.

In one embodiment, a semiconductor manufacturing apparatus includes an electrostatic chuck that includes a base and a first electrode provided on the base and is configured to electrostatically adsorb a wafer on the first electrode. The apparatus further includes a measurement module configured to measure potential of the wafer. The apparatus further includes a controller configured to adjust potential of the base based on the potential of the wafer and to adjust potential of the first electrode based on the potential of the wafer or the base, when the potential of the wafer measured by the measurement module changes.

Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

An apparatus includes a first and second stages. The first and second stages respectively hold a first and second substrates. The second stage being opposed to the first stage. A stress application portion applies a stress to the first substrate based on a first magnification value. A calculator calculates the first magnification value based on a flatness of the first substrate and a first equation. The first equation represents a relation between flatness of a third substrate, a second magnification value, and an amount of pattern misalignment between the third substrate and a fourth substrate bonded to the third substrate. A controller controls the stress application portion to apply a stress to the first substrate on the first stage based on the first magnification value while the first and second substrates are bonded to each other.

Provided are a deposition process monitoring system capable of detecting an internal state of a chamber in a deposition process, and a method of controlling the deposition process and a method of fabricating a semiconductor device using the system. The deposition process monitoring system includes a facility cover configured to define a space for a deposition process, a chamber located in the facility cover, covered with a translucent cover dome, and having a support on which a deposition target is placed, a plurality of lamps disposed in the facility cover, the lamps respectively disposed above and below the chamber, the lamps configured to supply radiant heat energy into the chamber during the deposition process, and a laser sensor disposed outside the chamber, the laser sensor configured to irradiate the cover dome with a laser beam and detect an intensity of the laser beam transmitted through the cover dome, wherein a state of by-products with which the cover dome is coated is determined based on the detected intensity of the laser beam.

A substrate processing apparatus can suppress particle generation on a substrate, and can reduce a consumption amount of a processing liquid. A substrate processing apparatus 1 includes a processing chamber 30 having a processing space 31 in which a substrate W is processed; a vaporizing tank 60, configured to store the processing liquid therein, having a vaporization space 61 in which the stored processing liquid is allowed to be vaporized; a decompression driving unit 70 configured to decompress the vaporization space 61; and a control unit 18. The control unit 18 vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 without through the processing space 31, and then, vaporizes the processing liquid into the processing gas by decompressing the vaporization space 61 through the processing space 31, and supplies an inert gas into the vaporization space 61.

A substrate processing system comprises one or more transfer chambers; a plurality of process chambers connected to the one or more transfer chambers; and a computing device connected to each of the plurality of process chambers. The computing device is to receive first measurements generated by sensors of a first process chamber during or after a process is performed within the first process chamber; determine that the first process chamber is due for maintenance based on processing the first measurements using a first trained machine learning model; after maintenance has been performed on the first process chamber, receive second measurements generated by the sensors during or after a seasoning process is performed within the first process chamber; and determine that the first process chamber is ready to be brought back into service based on processing the second measurements using a second trained machine learning model.